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1
A method for analysis of spatial distribution of electrostatic potential and band structure in (Hg,Cd)Te diode heterostructures
100%
Jóźwikowski K. , Niedziela T.
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tom Vol. 32, No. 4
384-389
EN
A method for solving the Poisson equation in strongly heterogeneous semiconductor structures is presented. It enables calculation of the spatial distribution of electrostatic potential, space-charge density, and band structure. The knowledge of spatial distributions of these quantities has practical significance in, for instance, designing of photoelectric devices employing nonequilibrium effects. The results obtained are the basis for further analysis and calculations of parameters of photoelectric diode structures applied in detection of infrared radiation. The method presented enables investigation of the influence of doping and molar-composition gradient on formation of junctions in the photodiodes designed, as well as indicates a method for limiting the unfavourable influence of misfit dislocations and surface recombination by applying internal forces occurring in regions of broadening energy gap. The combination of influence of heterogeneity of composition and doping can induce variations in electrostatic potential stronger than in homogeneous diodes, thus can enhance photovoltaic effect in detectors under construction.
2
High-temperature InAs1-xSbx photodiodes employing nonequilibrium effects
100%
Jóźwikowski K. , Niedziela T.
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tom Vol. 32, No. 4
378-383
EN
We determine operational parameters of high temperature (T = 230 K) InAs1-xSbx photodiodes in which nonequilibrium effects occurring near the p-n and l-h abrupt junctions are employed. It is proved that one can enhance the voltage responsivity o f a photodiode by using a heterostructure, thanks to an increase in the dynamic resistance. It is illustrated that relatively small reverse bias of photodiodes makes a considerable increase in their dynamic resistance and an increase in the quantum efficiency. The calculations are performed for photodiodes for the region o f medium infrared (3 ÷ 5.5 µm).
3
Analysis of detectin parameters of non-cooled long-wavelength multi-junction (Cd,Hg)Te photodiodes
100%
Jóźwikowski K. , Niedziela T.
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2000
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tom Vol. 33, No. 3
473-477
EN
A numerical analysis of long-wavelenght multi-junction photodiodes constructed on the basis of CdxHg1-xTe heterostructures is performed. An original iterative scheme is applied to solve the nonlinear system of continuity equations and the Poisson equation. All quantities are expressed as a function of electric potential and quasi Fermi levels. Results of computations are presented in the form of maps and plots illustrating spatial distributions of responsivity and generation-recombination noises. Such an illustration enables to explain the effect of reverse sign of the photo-voltage occurring in photoelectric devices being manufactured.
4
The influence of disolations on generation-recombination processes in narrow-bandgap semiconductors
100%
Jóźwikowski K. , Niedziela T.
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2000
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tom Vol. 33, No. 4
518-528
EN
A simple model of dislocations as cylindrical regions limited with a surface at which recombination occurs is proposed. It is assumed that both the radius of the dislocation surface and the rate of surface recombination are parameters experimentally determinable. Relations for the rates of carrier recombination and generation depemding on the density of dislocations have been obtained. An iterave scheme for the system of charge-carriers transport equations to analyse photoelectric effects in narrow-bandgap semiconductors of strong inhomogeneities is presented.
5
The analysis of detection capabilities of cooled (T = 80 K) two-colour (Cd,Hg)Te photodiodes
100%
Jóźwikowski K. , Niedziela T.
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2000
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tom Vol. 33, No. 4
529-534
EN
Properties of cooled (T= 80 K) two-colour (Cd,Hg)Te photodiodes operating simultaneously in two spectral regions (3 ÷ 4 um and 4 ÷ 8 µm) are analysed numerically. The resu;lts of coputations obtained are compared with parameters of two-colour photodiodes produced by the best Western films. Full usefulness of the programs applied for designing complex photoelectric devices is proved.
6
Some comments about carrier concentration in doped (Cd,Hg)Te structures
100%
Jóźwikowski K. , Niedziela T.
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2000
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tom Vol. 33, No. 4
535-541
EN
A simple method for comutation of carrier concentration in doped (Cd,Hg)Te (MCT) structures is proposed. The method is based on the postulate on the existence of dopant bands. The paper is of speculative character since the dopant bands are characterized by two parameters only (the mean energy of the band and the effective density of states). These parameters are taken so as good consistency could be obtained with experimental data comprising a wide range of doping levels for various kinds of dopants.
7
Content available remote Nierównowagowe, chłodzone termoelektrycznie fotodiody z InAs₁₋xSbx
80%
Jóźwikowski K. , Larkowski W. , Jóźwikowska A.
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2000
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tom Vol. 49, nr 2
41-52
PL
W pracy obliczono numerycznie parametry użytkowe fotodiod z InAs₁₋xSbx, w których wykorzystano zjawiska nierównowagowe zachodzące w otoczeniu skokowych złącz p-n i l-h. Pokazano, że stosując heterostrukturę można zwiększyć czułość napięciową fotodiody na skutek zwiększenia rezystancji dynamicznej. Z obliczeń wynika, że stosunkowo niewielka polaryzacja fotodiod w kierunku zaporowym powoduje znaczący wzrost ich rezystancji dynamicznej i w mniejszym stopniu zwiększenie wydajności kwantowej. Obliczenia przeprowadzono dla fotodiod na zakres widmowy 3 ÷ 5,5 μm pracujących w temperaturze 230 K.
EN
In InAs₁₋xSbx photodiode parameters have been numerically determined. Nonequilibrium effects occurring in the vicinity of p-n and l-h abrupt junctions were included. It was found that using a heterostructure the voltage responsivity of the photodiode can be enhanced. The dynamical resistance increase was responsible for that. From the calculations it follows that the respective small polarization of the photodiode in the reverse direction causes a significant increase in the dynamical resistance but there was found the increase in the quantum yield to be smaller. The calculation was carried out for photodiodes designed for 3 to 5.5 μm spectral range at temperature 230 K.
8
Content available remote Two-colour HgCdTe infrared detectors operating above 200 K
61%
Rutkowski J. , Madejczyk P. , Piotrowski A. , Gawron W. , Jóźwikowski K. , Rogalski A.
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tom Vol. 16, No. 3
321-327
EN
The performance of dual waveband HgCdTe photodiodes fabricated using metaloorganic chemical vapour deposition operated at high temperatures is presented. The effect of additional separating layer on the quantum efficiency and cross-talk of the photodiodes is analyzed. The photodiodes with cutoff wavelengths up to 6 um, good RoA product, and high quantum efficiency at 200 K have been demonstrated. The temperature dependence of the differential resistance is discussed. It is shown that the multilayer heterojunction P-n-N-n-P structure operating in a simultaneous mode has better performance than a structure operating in a sequential mode.
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