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1
Content available remote Photoacoustic operation modes for determination of absorption spectra of SiGe mixed crystals
Maliński M., Chrobak Ł.
Opto-Electronics Review
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2010
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Vol. 18, No. 2
190-196
EN
This paper presents comparison of two photoacoustic modes of determination of optical absorption spectra of semiconductors illustrated with the results obtained for SiGe crystals. Experimental transmission and absorption photoacoustic spectra of SiGe crystals as well as appropriate models for determination of optical absorption coefficient spectra are given. The idea and experimental set-up of the analyzed methods are presented too. From the fitting procedure of theoretical characteristics to experimental transmission and absorption photoacoustic spectra and after computations of the optical absorption coefficient spectra, three components of the optical absorption coefficient spectra of SiGe crystals were identified, i.e., band to band transitions, Urbach tail and free carriers absorption. Their parameters are given and discussed in the paper. At the end, the advantages and disadvantages of both methods are discussed. To the best of our knowledge, such a comparison of the two PA methods of determination of the optical absorption spectra has not been done before.
2
Content available Nanohills in SiGe/Si structure formed by laser radiation
Medvid' A., Onufrijev P., Lyutovich K., Oehme M., Kasper E., Dmitruk I., Pundyk I., Manak I., Grabovskis D.
Journal of Automation Mobile Robotics and Intelligent Systems
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2009
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Vol. 3, No. 4
62-64
EN
Formation of self-assembling nanohills induced by irradiation of nanosecond Nd:YAG laser pulses on the Si0.7Ge0.3/Si hetero-epitaxial structures is reported. The atomic force microscope study of the irradiated surface morphology has shown a start of nanohills formation after laser irradiation of the intensity I=7.0 MW/cm2. The giant "blue shift" of photoluminescence spectra with maximum intensity in region of 700-800 nm (1.76 - 1.54 eV) is explained by the Quantum confinement effect in the nanohills. The maximum of this photoluminescence band slightly shifts to shorter wavelengths with the increase of the intensity of laser pulses used for sample treatment. Appearance of the 300 cm-1 Ge-Ge vibration band in Raman scattering spectra for sample irradiated with I=20.0MW/cm2 is explained by Ge phase formation. Formation of the Ge-rich phase is explained by localization of Ge atoms drifting toward the irradiated surface under the thermal gradient due to strong absorption of laser radiation.
3
Content available SiGe HBT wideband amplifier for millimeter wave applications
Krcmar M., Noether N., Boeck G.
Journal of Telecommunications and Information Technology
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2007
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nr 1
8-12
EN
A wideband amplifier up to 50 GHz has been implemented in a 0.25 žm, 200 GHz ft SiGe BiCMOS technology. Die size was 0.7×0.73 mm2. The two-stage design achieves more than 11 dB gain over the whole 20 to 50 GHz band. Gain maximum was 14.2 dB at 47.5 GHz. Noise figure was lower than 9 dB up to 34 GHz and a current of 30 mA was drawn from a 4 V supply. To the author's best knowledge this is the highest gain bandwidth product of a monolithic SiGe HBT amplifier ever reported.
4
Content available Modeling of the inverse base width modulation effect in HBT transistor with graded SiGe base
Zaręba A., Łukasiak L., Jakubowski A.
Journal of Telecommunications and Information Technology
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2007
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nr 3
88-92
EN
A model of the position of the edge of emitter-base junction in the base and collector current pre-exponential ideality factor in HBT transistor with a SiGe base is presented. The model is valid for transistors with nonuniform profiles of doping and Ge content. The importance of taking into account the dependence of the effective density of states in SiGe on local Ge content and that of electron diffusion coefficient in SiGe on drift field for modeling accuracy is studied.
5
Krzemogerman SiGe w mikroelektronice
Łukasiak L., Jakubowski A., Beck R. B., Pióro Z.
Elektronika : konstrukcje, technologie, zastosowania
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2006
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Vol. 47, nr 4
34-37
PL
Przedstawiono korzystne właściwości materiałowe krzemogermanu oraz jego zastosowanie w przyrządach półprzewodnikowych, takich jak tranzystor bipolarny (baza) oraz tranzystor MOS.
EN
In this paper advantageous material properties of silicon-germanium are presented as well as the application of SiGe in semiconductor devices, such as: bipolar transistor (base) and MOSFET (channel, gate, source and drain contacts).
6
Content available DC and low-frequency noise analysis for buried SiGe channel metamorphic PMOSFETs with high Ge content
Durov S., Mironov O. A., Myronov M., Whall T. E., Parker E. H. C., Hackbarth T., Hoeck G., Herzog H. J., König U., Känel von H.
Journal of Telecommunications and Information Technology
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2005
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nr 1
101-111
EN
Measurements of current drive in p-Si1-xGex MOSFETs, with x = 0.7, 0.8 reveal an enhancement ratio of over 2 times as compared to a Si device at an effective channel length of 0.55 žm. They also show a lower knee voltage in the output I-V characteristics while retaining similar values of drain induced barrier lowering, subthreshold swing, and off current for devices with a Sb punch-through stopper. For the first time, we have quantitatively explained the low-frequency noise reduction in metamorphic, high Ge content, SiGe PMOSFETs compared to Si PMOSFETs.
7
Analiza wpływu parametrów kanału SiGe na charakterystyki C-U kondensatora MOS
Łukasiak L., Jakubowski A.
Elektronika : konstrukcje, technologie, zastosowania
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2005
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Vol. 46, nr 2-3
57-58
PL
Zbadano wpływ parametrów kanału SiGe (zawartość Ge, grubość warstwy SiGe) na charakterystyki C-U kondensatora MOS za pomocą symulacji z użyciem pakietu ATLAS/BLAZE oraz nowego modelu niskoczęstotliwościowej pojemności badanej struktury.
EN
The influence of SiGe channel parameters (Ge content and SiGe layer thickness) on the C-V characteristics of a MOS capacitor is investigated using ATLAS/BLAZE simulations and a new model of LF capacitance of the considered structure.
8
Półprzewodniki a techniki i technologie informacyjne
Jakubowski A., Łukasiak L., Pióro Z.
Przegląd Telekomunikacyjny + Wiadomości Telekomunikacyjne
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2004
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nr 8-9
337-345
PL
Omówiono wpływ mikroelektroniki na rozwój technik technologii informacyjnych, krótko przedstawiono najważniejsze etapy historii mikroelektroniki, przedyskutowano wybrane problemy skalowania tranzystora MOS oraz sposoby ich rozwiązywania, rozważono ograniczenia dla działania prawa Moore'a w przyszłości.
EN
The influence of microelectronics on the development of information technology was described, the most important moments of microelectronics history were briefly presented, selected critical issues of MOSFET scaling were discussed, as well as possible solutions, future limitations to the validity of Moore's law were considered.
9
Content available Silicon microelectronics: where we have come from and where we are heading
Łukasiak L., Jakubowski A., Pióro Z.
Journal of Telecommunications and Information Technology
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2004
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nr 1
7-14
EN
The paper briefly presents the history of microelectronics and the limitations of its further progress, as well as possible solutions. The discussion includes the consequences of the reduction of gate-stack capacitance and difficulties associated with supply-voltage scaling, minimization of parasitic resistance, increased channel doping and small size. Novel device architectures (e.g. SON, double-gate transistor) and the advantages of silicon-germanium are considered, too.
10
Content available Process and device requirements for mixed-signal integrated circuits in broadband networking
Iniewski K., Syrzycki M., Voinigescu S.P.
Journal of Telecommunications and Information Technology
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2004
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nr 1
90-98
EN
The paper describes the present status of the broadband wireline infrastructure consisting of the backbone core, metre rings, access network, local and storage area networks. Examples of various mixed-signal integrated circuits are described. Based on these considerations required process and device performance is extrapolated.
11
Modelowanie wpływu parametrów tranzystora HBT z bazą SiGe na prędkość nośników w bazie przy użyciu symulatora APSYS 2000
Linkowski A., Łukasiak L., Jakubowski A.
Elektronika : konstrukcje, technologie, zastosowania
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2004
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Vol. 45, nr 10
24-25
PL
Analiza wpływu domieszkowania i zawartości Ge w bazie tranzystora HBT z bazą SiGe na prędkość nośników w bazie przy użyciu symulatora przyrządów półprzewodnikowych APSYS 2000.
EN
The influence of such SiGe-base HBT parametrs, as doping and Ge content in the base, on the carrier velocity in the base is studied using APSYS 2000 simulator.
12
Mikroelektronika : materiały i przyrządy
Jakubowski A., Łukasiak L., Szmidt J.
Elektronika : konstrukcje, technologie, zastosowania
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2002
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Vol. 43, nr 7/8
5-8
PL
Mikroelektronika jest fundamentem przemysłu technik informacyjnych. Wartość sprzedaży systemów elektronicznych, które bez mikroelektroniki istnieć by nie mogły osiągnęła obecnie 1000 mld USD stawiając ten przemysł na pierwszej pozycji nie tylko ze względów cywilizacyjnych i strategicznych, ale także rynkowych. Udział półprzewodników w wartości sprzedaży systemów elektronicznych systematycznie wzrasta i wynosi obecnie ok. 25%. W artykule przedstawiono stan obecny i tendencje rozwojowe mikroelektroniki. Przedyskutowano także bariery i ograniczenia dotychczasowego rozwoju opartego na klasycznych przyrządach, głównie typu MOS. Przedstawiono również inne niż krzem materiały podłożowe, które mogą znaleźć zastosowanie w mikroelektronice.
EN
Microelectronics is the foundation of the information-technology industry. Sales of electronics systems, which would not be feasible without microelectronics, reach currently 1000 billion U.S. dollars. This alone puts this industry in the leading position because economic of reasons, not to mention civilization and strategic ones. The contribution of semiconductors in the sales of electronics systems is steadily increasing and currently reaches the level of 25 per cent. The paper presents the current state and development trends of microelectronics. Barriers and limitations of microelectronics development based on classical devices (mostly of the MOS type) are discussed, too. Moreover, new, promising substrate materials, other than silicon, are presented.
13
Content available SiGe field effect transistors - performance and applications
Whall T.E., Parker E.H.C.
Journal of Telecommunications and Information Technology
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2001
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nr 1
3-11
EN
Recent and encouraging developments in Schotky and MOS gated Si/SiGe field effect transistors are surveyed. Circuit applications are now beginning to be investigated. The authors discuss some of this work and consider future prospects for the role of SiGe field effect devices in mobile communications.
14
Content available CVD growth of high speed SiGe HBTs using SiH4
Radamson H.H., Grahn J., Landgren G.
Journal of Telecommunications and Information Technology
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2000
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nr 3-4
10-14
EN
The growth of high frequency HBT structures using silane-based epitaxy has been studied. The integrity of SiGe layers in the base and the control of the collector profile using As- or P-doping grown at 650°C have been investigated. The results showed that the growth rate of SiGe layers has a strong effect on the evolution of defect density in the structure. Furthermore, B-doped SiGe layers have a higher thermal stability compared to undoped layers. The analysis of the collector profiles showed a higher incorporation of P in silane-based epitaxy compared to As. Meanwhile, the growth of As- or P-doped layers on the patterned substrates suffered from a high loading effect demanding an accurate calibration.
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