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Ultra-low frequency spectra for Li+ ion thermoemission noise

100%

Gładyszewski L.

Optica Applicata

2002

tom Vol. 32, nr 3

235-239

The surface diffusion of Li on polycrystalline tungsten and ionic thermal desorption are studied by a method based on the Li ion current noise arising from the fluctuation of the work function as a result of random fluctuations of the Li adsorbate density. The activation energy for surface diffusion of Li has been determined by measuring the spectral density functions and their parameters depending on temperature.

Statistical properties of ion pulse emission of natural inpurities from tungsten investigated at hight temperatures

63%

Gładyszewski L. , Reszka A.

Electron Technology

1998

tom Vol. 31, No. 3/4

499-501

The thermal emisson of positive K⁺ ions from a tungsten filament occuring as positive pluses (bursts) [1,2] were investigated. Duration of a pulse was about 10 µm and each pulse corresponded to the emission of a group of 10³ to 10⁶ single charged ions. It was observed that the potassium ions originating from the impurities deposited in cavities and dislocations in the polycrystalline tungsten filament. The paper presents statistical parameters of this emission.

Strain in multilayered systems and its influence on asymmetric X-ray diffraction profiles

51%

Chocyk D. , Gładyszewski G. , Pienkos T. , Gładyszewski L.

Electron Technology

2000

tom Vol. 33, No. 3

329-333

The paper presents the results of the validity test of the sin²Ψ method applied for determining strains in a case of multilayer systems. The calculations were performed using three-dimensional model based on a Monte Carlo simulation and the kinematical theory of scattering. Our calculations show that the analysis of strains in multilayers performed using the sin²Ψ method may give misleading results and therefore should be accompanied by other methods.

Determination of surface waviness using radius of curvature measurement with laser scanning technique

45%

Pieńkos T. , Gładyszewski L. , Prószyński A. , Chocyk D. , Gładyszewski G.

Optica Applicata

2005

tom Vol. 35, nr 3

503-507

A method for obtaining the shape of a surface investigated with a laser scanning curvature measurement is presented. Additional simple analysis of raw experimental data allows one to determine waviness of the sample. The accuracy of the method and comparison of the results obtained with the method and commercial profilometer are also described.

Post-deposition stress evolution in Cu and Ag thin films

45%

Chocyk D. , Prószyński A. , Gładyszewski G. , Pieńkos T. , Gładyszewski L.

Optica Applicata

2005

tom Vol. 35, nr 3

419-424

Evolution of stresses in thin Cu and Ag films after deposition by thermal evaporation in UHV system is studied. Thin films were deposited on 100 um thick Si substrate at room temperature. Deposition rates for the Cu and Ag films were 0.5 A/s and 0.9 A/s, respectively. The total thickness ranged from 7.7 up to 109 nm. The average stress in the films was determined by measuring the radius of samples curvature. The behavior of stress evolution curves is explained by two mechanisms of stress generation: filling grain boundaries and islands coalescence.

Measurement of stress as a function of temperature in Ag and Cu thin films

45%

Prószyński A. , Chocyk D. , Gładyszewski G. , Pieńkos T. , Gładyszewski L.

Optica Applicata

2005

tom Vol. 35, nr 3

517-522

Stress measurements of 23 nm copper films and 93 nm silver films on Si (100) have been performed during thermal cycling between RT and 450°C. The changes in stress versus temperature are interpreted. The effects of treatment on microstructure and composition are studied by X-ray diffraction.

Measurements of stress during ion irradiation

38%

Pieńkos T. , Gładyszewski L. , Chocyk D. , Prószyński A. , Gładyszewski G. , Martin F. , Jaouen C.

Optica Applicata

2002

tom Vol. 32, nr 3

421-424

The exemplary results obtained with a simple optical set-up for the measurement of curvature radius during ion implantation are presented. The Kr ion irradiation was performed for silicon substrate without a film. After the irradiation the implanted region of silicon was under compressive stress. Maximum of the stress was evidenced for a dose of 1×1014 ions/cm2. The optical set-up is very flexible and may cooperate with various apparatus