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Electrical and structural properties of HgCdTe/Si films obtained by the laser epitaxy

100%

Plyatsko S. V. , Vergush M. M. , Plyatsko S. K. , Piotrowski T.

2000

tom Vol. 33, No. 4

548-552

In this paper Investigations of HgCdTe layers are presented. The layers have been grown on silicon substrate by evaportation technique using a modulated infrared, large power laser beam. The investigated parametaers included resistivity, the Hall coefficient and mobility of n-type layers obtained by means of evaportation of a solid source or power tablet. The results of characterization using Auger spectroscopy are also shown together with AFM results.

Investigations of laser deposited semiconductor layers with the STM

88%

Piotrowski T. , Pułtorak J. , Kulumbetov Z. E. , Liptuga A. I. , Plyatsko S. V.

tom Vol. 31, No. 2

219-223

In the work results of topographic measurements with the STM (scanning tunneling microscope) for the determination of the surface roughness and grain dimensions of PbTe/BaF₂ layers grown by the source evaporation technique have been presented. The measuremants have been carried out for various substrate temperatures (100 ÷ 400°C) and various power densities of the laser beam. A modulated infrared laser with hv