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Optical anisotropy of Pb nanowires on Si(533) surface

100%

Jałochowski M. , Stróżak M.

tom Vol. 32, nr 3

373-379

Ultrathin Pb films on Si(533)/Au surface deposited at low temperatures are investigated by STM, RHEED, and by optical reflectance difference spectroscopy (RDS). In particular, we report the observation by RDS of an anisotropy in the optical reflectance of the Si(533) surface covered by Pb nanowires. It is found that the optical anisotropy originates from anisotropy of electrical conductivity of the Si(533) substrate and the anisotropy of Pb nanowires formed on this surface

Transmission of low-energy electrons through Pb quantum well

80%

Zdyb R. , Stróżak M. , Jałochowski M.

tom Vol. 31, No. 3/4

315-319

The Pb film have been grown on Si(111)-(6x6)Au substrate. Electron transmission through the film was measured as a function of incident electron energy. Two types of structures were observed in collected current. One of them strongly depends on the thicknees of Pb layers, characteristic of the quantum size effect. The other is associated with the bulk band structure of Pb. The value of inner potential of Pb equal to 14 eV was determined.

Optical reflectivity of ultrathin Pb layers and the quantum size effect

80%

Jałochowski M. , Stróżak M. , Zdyb R.

tom Vol. 31, No. 3/4

291-300

We have studied in situ the reflectance difference (RD) during depositon of ultrathin Pb epitaxial film onto Si(111)-(6x6)Au substrates held at 100 K in UHV conditions. S- and p-polarized radiation with energy within the range from 0.5 eV to 3.0 eV was used to excite electron transitions in the Pb samples showing the quantum size effects (QSE). The optical reflection data were analysed using classical and QSE theories. Observed thicknees-dependet reflectivity variations were correlated with previously measurmed electrical resistivity oscillations. Scattering time of electrons involved in the electrical resistivity measurements. Evidences of optical diamagnetic and paramagnetic response of electrons in the metallic quantum well are prasented and discussed.

Growth of the ultra-thin Pb layers on Si(533) surface

80%

Zdyb R. , Stróżak M. , Jałochowski M.

Electron Technology

2000

tom Vol. 33, No. 3

380-384

Vicinal Si(111) surfaces were investigated by Reflection High Energy Electron Diffraction (RHEED). The samples were cut 14.42° off the (111) plane in (112) direction. The Si(533) plane with a regularly distributed terraces and monoatonic steps was obtained by depositing of 0.28 monolayer (ML) of Au on a clea vicinal surface and annealing it up to 900 K. The length of the terraces and the height of the steps were determined equal to 12.27 Å and 3.22 Å , respectively. The structure of metallic Pb layers deposited on the vicinal suraces was studied. Up to the thickness equal to 4ML we observed the growth of Pb in from of one-and two-dimensional structures. Above this thickness only two-dimensional crystallites exist. The mean sizes of the Pb crystallities were determined from the intensity distribution of the diffraction spots.