Wyniki wyszukiwania - Biblioteka Nauki

1

Department of Research on Materials and Semiconductor Structures

100%

Kątcki J.

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1998

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tom z. 2-4

95-102

2

Department of Materials and Semiconductor Structures Research

100%

Kątcki J.

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2003

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tom z. 2

123-140

3

Department of Materials and Semiconductor Structures Research

100%

Kątcki J.

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tom z. 1/2

134-153

4

Department of Materials and Semiconductor Structures Research

100%

Kątcki J.

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2005

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tom z. 1/2

132-147

5

Department of Research on Materials and Semiconductor Structures

100%

Kątcki J.

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tom z. 4-7

108-117

6

Department of Materials and Semiconductor Structures Research

100%

Kątcki J.

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tom z. 8-12

91-106

7

High-resolution transmission electron microscopy of AlAs/GaAs/AlGaAs multilayer heterostructure

51%

Nishio K. , Kątcki J. , Shiojiri M.

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tom Vol. 32, No. 4

348-353

EN

A multilayer heterostructure of GaAs/AlAs/GaAs/AlGaAs/GaAs, which was prepared by molecular beam epitaxy at the Institute of Electron Technolgy was analysed by high-resolution transmission electron microscpoy (HRTEM) with the aid of image simulation and image processing. In spite of specimen damage during ion-milling Tem specimen preparation, columns of Ga and As atoms in the GaAs and columns of Al and As atoms in the AlAs were positioned in the (110) HRTEM images. The average and the variance of the widths of AlAs, GaAs, and AlGaAs layers were estimated from a small-ange scattering image reconstructed from the HRTEM image.

8

Determination of optical parameters of the MOS structure for use in photoelectric measurements

51%

Kudła A. , Brzezińska D. , Kątcki J. , Wagner T.

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tom Vol. 32, No. 4

390-395

EN

A three-layer optical model of the MOS structure: (1) Al₂O₃, (2) A1 with Al₂O₃ or void content, (3) SiO₂ on a Si substrate has been applied earlier in spectroscopic ellipsometry. This model enabled a good fit of the calculated and measured spectral ellipsometric characteristic. However the S i0₂ layer thicknesses and gate layer thicknesses determined by other methods were not always identical with the ones obtained by spectroscopic ellipsometry. Penetration of A1 into SiO₂ was directly confirmed by cross-sectional TEM observations. Applying a more advanced, five-layer model with two intermediate layers (50% Al₂O₃-50%AI and 50% Al-50% SiO₂) for calculations in spectroscopic ellipsometry, made it possible both to determine the thicknesses of individual layers and to confirm the penetration of A1 into SiO₂ in most of the samples. Photoelectric characteristics calculated using the optical parameters of the system determined in this way were compared with the experimental ones. Good agreement of SiO₂ thicknesses used in calculation and obtained from other measurements supports the presented optical model of the Al-SiO₂-Si structure.

9

TEM study of iridium silicide contact layers for low Schottky barrier MOSFETs

38%

Łaszcz A. , Czerwiński A. , Ratajczak J. , Kątcki J. , Breil N. , Larrieu G. , Dubois E.

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tom Vol. 51, iss. 4

551-554

EN

An influence of annealing temperatures (300, 400 and 500°C) on the iridium silicide formation in the Ir/Si structure was analysed by means of the transmission electron microscopy (TEM). The silicide layer is formed by the solid-state reaction between 15 nm thick Ir metallisation and a Si layer during the rapid-thermal-annealing (RTA) process for 120 s. The silicide layers are used as source/drain contacts for a novel technology of low Schottky barrier MOSFETs on SOI. For this reason the high quality of the silicide/Si interface and the silicide structure are essential for the electrical properties of the device. The studies enabled the determination of the silicide layer thickness, the layer morphology, and the silicide/Si interface roughness as well as the identification of the silicide phase. Annealing of the Ir/Si structure at 300 and 400°C caused formation of an amorphous iridium silicide layer between the iridium layer and the silicon substrate. At the highest annealing temperature (500°C) the whole Ir layer completely reacted with Si, forming a crystalline iridium silicide layer. A diffraction analysis showed that the silicide layer consists of the dominant IrSi orthorhombic phase and another silicide phase with higher content of silicon (IrSix). The IrSix is placed between IrSi and Si. It indicates that during solid-state reaction at 500°C the Si diffusion is predominant.

PL

Wpływ różnych temperatur wygrzewania (300, 400 i 500°C) na proces tworzenia się krzemku irydu w strukturze Ir/Si był badany za pomocą transmisyjnej mikroskopii elektronowej (TEM). Warstwa krzemkowa tworzy się podczas wygrzewania przez 120 s metoda RTA 15 nm warstwy irydu osadzonej na podłożu krzemowym. Tak wytworzone warstwy krzemkowe stosowane są jako źródło/dren kontakty w nowoczesnej technologii tranzystorów typu MOSFET na podłożach SOI. Uzyskanie najlepszych parametrów elektrycznych tranzystorów zależy od struktury krzemku jak i bardzo gładkiej granicy fazowej krzemek/Si. Badania przy użyciu TEM polegają na określeniu grubości i morfologii warstw krzemkowych, gładkości granicy fazowej krzemek/Si, jak również ustaleniu rodzaju struktury krystalicznej tworzącego się krzemku irydu. Wygrzewanie struktury w temperaturze 300 i 400°C powoduje tworzenie się amorficznej warstwy krzemku irydu pomiędzy warstwą irydu a podłożem krzemowym. W najwyższej temperaturze wygrzewania (500°C) cała warstwa irydu reaguje z krzemem, tworząc krystaliczną warstwę krzemku irydu. Analiza dyfrakcyjna wykazała, że warstwa krzemkowa składa się z dominujacej fazy IrSi o budowie rombowej oraz innej fazy krzemku irydu zawierającej więcej krzemu (IrSix) i położonej pomiędzy faza IrSi a podłożem krzemowym. Wynik ten wskazuje, że podczas reakcji w 500°C dyfuzja Si jest dominująca.

10

TEM study of the formation of defects in AlGaAs/GaAs and InGaAs/GaAs heterostructures

38%

Kątcki J. , Ratajczak J. , Phillipp F. , Jin-Phillipp N. Y. , Shiojiri M. , Regiński K. , Bugajski M.

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tom Vol. 32, No. 4

343-347

EN

In this paper the formation of lattice defects in AlGaAs/GaAs and InGaAs/GaAs heterostructures is discussed. The heterostructures were grown by various techniques of epitaxy. Transmission electron microscopy (TEM) observations of the heterostructure showed that in AlGaAs/GaAs heterostructures the main reason for the formation of defects are local inhomogeneties but in InGaAs/GaAs heterostructures lattice misfit is responible for this process.

11

Transmission electron microscopy, X-ray diffraction and photoluminescence diagnostics of heterostructures with InGaAs and GaAs layers

32%

Kątcki J. , Adamczewska J. , Lewandowski W. , Rzodkiewicz W. , Ratajczak J. , Phillipp F. , Jin-Phillipp N. Y. , Regiński K.

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tom Vol. 31, No. 2

197-201

EN

The prupose of this paper is to show the applicaton of combined techniques (TEM, XRD, PL) for characterising the influence of the layer thicknees and indium content in InxGa₁₋xAs alloy on structural perfection of the InxGa₁₋xAs/GaAs heterostructure. As examples heterostructures with: a) In₀.₂Ga₀.₈As layers embedded in a GaAs matrix; b) InxGa₁₋xAs multilayers consisting of layers of different indium content and c) an index-graded InxGa₁₋xAs layer (x=0.01 ÷ 0.53) grown on a GaAs substrate were chosen. Determination of exact thicknees of each layer, alloy composition, and perfection of interfaces are crucial questions in developing technologies based on these heterostructures.