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1

Efekty polowe w warstwach tlenkowych

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Olesik J.

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2013

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tom Vol. 54, nr 3

85-89

PL

W pracy badano właściwości emisyjne cienkich i domieszkowanych warstw In₂O₃ i SnO₂ (ITO). Warstwy tlenkowe były nałożone na podłoża szklane i poddane działaniu pola elektrycznego i światła UV. Badano wtórną emisję elektronów sterowaną polem elektrycznym oraz połowo indukowaną emisję elektronową. Natężenie pola elektrycznego wewnątrz emitera było rzędu 1 MV/m. Polowe zjawiska emisyjne bazują na efekcie Maltera. Metoda emisji indukowanej polem polega na analizie widma impulsów napięciowych z powielacza elektronowego. Wyznaczono wydajność emisyjną i rozkłady energetyczne elektronów w zależności od natężenia pola elektrycznego wewnątrz emitera, grubości warstwy ITO oraz oświetlenia. Wyjaśniając mechanizm tych zjawisk podano główne założenia polowego rozdziału warstwy ITO na strefę zubożoną i wzbogaconą w nośniki ładunku. Zaproponowano fenomenologiczny model zjawisk emisyjnych uwzględniający cztery typy mechanizmów emisji elektronowej wywołanej działaniem pola elektrycznego oraz efektami powierzchniowymi i objętościowymi.

EN

In this work, emission properties of thin and doped In₂O₃ and SnO₂ layers (ITO) have been studied. The films were deposited on a glass substrate and exposed to electric field and UV light. The studied emission phenomena were: field induced secondary electron emission and field induced electron emission. Electric field inside the emitter was of the order of 1 MV/m. The field induced electron emission (FIEE) is based on Malter effect. The FIEE measurements relied on determination and analysis of voltage pulse amplitude spectra from a photomultiplier. Emission yield and electron energy distributions as a function of field intensity in the emitter, the ITO thickness and UV illumination have been determined. A phenomenological model of the investigated phenomena has been suggested which includes four types of emission mechanisms: an ordinary one (induced exclusively by electric field) and another caused mainly by surface, volume and tunnel effects.

2

Field-induced effects in the glass coated with In₂O₃ thin layer

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Olesik J.

Electron Technology

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2000

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tom Vol. 33, No. 3

408-411

EN

The work contains results of investigations on the phenomena of the electron emissio and photoemission in thin oxide layers (In₂O₃:Sn) in which internal electric field has been generated Photoinduced optical second harmonic generation (SHG) has been also observed in this film coaled galss. The sample was a silicon glass with conducting films evaporated by reactive ion sputtering on its both sides. One film (of the thickness 10 ÷ 20 nm and 4 ÷ 15 žm) was the emitting surface. The other, of thickness 1 µm, was plarized in order to create an internal field (field electrode). The internal electric field was created by applying a negative polarizing viltage Vpol to field electrode (-200 ÷ 0 V). The investigations were performed in the vacuum of the order 10⁻⁶ Pa. As a result of applying Vpol and illumination, Photoelectronics are released and enter electron multiplier. The electrons create viltage pluses in the multiplier which are recorded in the multichannel pulse amplitude analyser. The amplitude spectra (for various Vpol) were measured for unilluminated samples and illuminated by a quartz lamp type XBO 150. Electron emission yield dependence on the intensity of an internal field and illumination were measured. With increasing Vpol and after illumination the count frequency of pluses grows monotonically. Energy analysis of emitted lectron was performed by the retarding field method. Measurements of electrons energy in field induced emission showed that about 80% o electrons have energy up to 10 eV but some electrons of higher energy are also detected. The described effects can be modelled with support of the electron effects occurring during the intrinsic discharges in gases. The tunneling effects of electrons are also likely to occur in the considered layers.

3

High-energy electron emission from MIS-structures

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Olesik J.

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tom Vol. 32, nr 3

409-416

EN

The effects of electric field induced electron emission from complex emitters are studied. As the emitters were used thin ITO (indium tin oxide) films deposited on a glass plate. The ITO film was subjected to the bombardment by a primary electron beam or illuminated by the UV light. The field induced secondary electron emission (FISEE) was studied in the 10–7 hPa vacuum. Energy examination of the emitted electrons revealed some electrons of energy higher than Ep. The electron emission still existed due to the applied field and UV illumination after stopping the bombardment by the primary beam (field induced electron emission and photoemission – FIEE and FIPE). About 80% of the emitted electrons were found to have energy within 1–2 eV (few percent – 10 eV). The phenomenological model of the field induced emission effects was proposed. The main assumptions of the model are supported on the basis of the field induced division of the ITO film into two zones: with depleted and enhanced number of electrons.

4

Optoelectronic properties controlled by an electric field in thin films

51%

Olesik J. , Całusiński B. , Olesik Z.

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tom Vol. 31, No. 3/4

425-428

EN

Electron emission properties of semiconducting films (In₂O₃:Sn) and metallic films (Ti) os thickness 10÷ 100 nm were investigated. the films were deposited by ractive ion sputtering on a glass substrate of thickness 0.2mm. The oposite of the substrate (with a field electrode evaporated onto it) was biased by negative voltage. This created transverse electric field which favoured electron emission into the vacuum. The investigation was performed in the vacuum of the order 10⁻⁸ hPa. Electron emission yield dependence on the intensity of an internal field and illumination were measured. It was shown that the emission yield for semiconducting films depends exponentilly on field intensity. The field influence on photoemission was also found. For metallic films the field effect on emission phenomena was found to be significantly smaller. Measurements of electronics energy in field inducted emission for both types of investigated emiters showed that about 80% of electrons have energy up to eV but some electrons (a few percent) of energy about 50 eV are also detected.