Wyniki wyszukiwania - BazTech

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Monitoring i optymalizacja wykorzystania energii solarnej w Politechnice Lubelskiej

Olchowik J., Gułkowski S., Cieślak K., Jóźwik I., Adamczyk J., Tomaszewski R., Szymczuk D., Banaś J., Zabielski K., Mucha J.

Zeszyty Naukowe Politechniki Rzeszowskiej. Budownictwo i Inżynieria Środowiska

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2006

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z. 40 [229]

371-376

PL

W pracy przedstawiono wyniki dwuletniej analizy funkcjonowania systemu solarnego Instytutu Fizyki Politechniki Lubelskiej. System ten wykorzystuje równocześnie dwa rodzaje konwersji - fototermiczną i fotowoltaiczną. Do analizy wykorzystano autorski system monitoringu.

EN

This work presents two years analysis of functioning of solar system in Institute of Physics of Lublin University of Technology. This system uses two types of solar energy conversion - phototermal and photovoltaic. The original system of monitoring was used.

2

Analysis of temperature influence on the monocrystalline silicon solar cells efficiency under the south-easterly Poland conditions

Olchowik J. M., Gułkowski S., Cieślak K. J., Banaś J., Jóźwik I., Szymczuk D., Zabielski K., Mucha J., Zdrojewska M., Adamczyk J., Tomaszewski R.

Materials Science Poland

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2006

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Vol. 24, No. 4

1127--1132

EN

Recently, solar energy conversion has become a very actual item, especially when the world faces problems of petroleum supply and there has been a growing demand for using renewable energy sources. In this situation an important question araises how to use solar energy optimally. The quantum efficiency of solar cells depends on many factors: temperature, insolation, spectral characteristics of sunlight, etc. Some of these factors may be changed during exploitation of solar systems in order to increase their efficiency. The paper reports on the influence of temperature on the work efficiency of monocrystaline photovoltaic modules in hybrid solar systems in the conditions of south-eastern Poland.

3

Analysis of crystallisation of GaAs/Si heterostructures

Olchowik J. M., Zdyb A., Szymczuk D., Mucha J., Zabielski K., Sadowski W., Mucha M.

Opto-Electronics Review

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2000

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Vol. 8, No. 4

393-397

EN

Analysis of influence of interface atom layout on the possibilities of GaAs thin layers and silicon substrates coupling obtained from liquid phase is presented. Significant lattice mismatch between Si and A III B V crystals as well as significant difference in sizes of atoms of adjoining structures may cause instability of interface on a stage of their mutual exposition. The main aim of this work is to find such configurations of atoms near the interface, which minimise a value of the coupling energy. The authors present a model of atoms interactions, based on the Morse potential. There was also elaborated an algorithm of numerical calculations of the total energy of interactions between the atoms near the interface as a function of substrate orientation.

4

Analysis of the interface energy in GaInPAs/Si structures during liquid phase epitaxy

Olchowik J. M., Zdyb A., Szymczuk D., Mucha J., Zabielski K., Sadowski W., Mucha M.

Electron Technology

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1998

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Vol. 31, No. 3/4

354-357

EN

This paper presents the numerical analysis of the dependence of pseudopotential energy on substrate orientation for AIIIBV compounds on Si substrate. The aim on this work was to find optimal coupling conditions of such heterostructurtes during liquid phase epitaxy. The structures of this type can be used to modern fotovoltaic device fabrication.