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Metastability problems in amorphous silicon

Pietruszko S.M., Kostana M.

Journal of Telecommunications and Information Technology

2001

nr 1

76-79

The results of study of the influence of boron and phosphorous doping and hydrogen content on transport properties and thermally induced metastability of LPCVD a-Si are reported. The thermally induced metastability has been observed in both unhydrogenated and hydrogenated P-doped a-Si films. Metastability is a barrier for wide application of a-Si such solar cells. In this paper we report our studies on the effect of thermally induced metastability in LPCVD a-Si as a function of implanted boron and phosphorous concentration. We have investigated films unhydrogenated and hydrogenated by ion implantation. The results are qualitatively agreed with bond breaking model.

Formation and relaxation of metastable defects in amorphous silicon

Pietruszko S. M., Kostana M.

Opto-Electronics Review

2000

Vol. 8, No. 4

385-387

We studied relaxation of defects formed during fast quenching in low pressure chemical vapour deposition (LPCVD) amorphous silicon with different hydrogen concentrations (from 0.05 at.% to 15 at.%) doped with boron or phosphorous (2 at.%). Results of measurement of dark conductivity after quenching and slow cooling as well as measurement of the isothermal relaxation of dark conductivity after quenching in different temperatures are presented. We found relaxation time higher in P-doped than in B-doped films in the same annealing temperature. Activation energy of relaxation time was independent on hydrogen concentration and was higher for B-doped samples.