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1

On possibility to extend the operation temperature range of SOI sensors with polysilicon piezoresistors

Druzhinin A., Lavitska E., Maryamova I., Kogut I., Khoverko Y.

Journal of Telecommunications and Information Technology

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2001

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nr 1

40-45

EN

The aim of this work was to study the possibilities of developing mechanical sensors with poly-Si piezoresistors on insulating substrate for operation in different temperature ranges (low, elevated and high temperatures). Laser recrystallization is used as a technological tool to adjust the electrical and piezoresistive parameters of the polysilicon layer. For this purpose a set of studies including numerical simulation and experimental work has been carried out. The main three directions of the studies are considered: problems of thermal stabilization of the pressure sensor performance at elevated and high temperatures; problem of sensor operation at cryogenic temperatures; development of a multifunctional pressure-temperature sensor.

2

Grain boundary effect on the anisotropy piezoresistance of laser-recrystallized polysilicon layers in SOI-structures

Pankov Y., Druzhinin A.

Journal of Telecommunications and Information Technology

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2001

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nr 1

46-48

EN

A physical model of grain boundary influence on the piezoresistive effect of p-type conductivity of polysilicon layers in SOI-structures is developed. Software calculating piezoresistive properties of boron-doped p-type polysilicon layers has been developed. These properties may be calculated over wide concentration and temperature ranges with anisotropy taken into account and with the average grain size as a parameter. The potential barrier regions around the grain boundaries influence the deformation changes of anisotropy resistance in the fine-grained non-recrystallized SOI-structures doped with boron up to 3ź10(19)cm(-3) only.

3

The diagnostics of SOI photosensor characteristics

Druzhinin A., Lytvyn I., Tychansky M.

Electron Technology

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1999

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Vol. 32, No. 1/2

88-90

EN

In creation of functional photosensors produced by the laser recrystallization of thin film poly-Si on insulator the development of physical models plays an important role. These models allow to combine parameters of technological operations, physical properties of source materials with the photo-electric characteristics of photosensors. At the first stage of solution of this problem it is necessary to receive the information on the most number of physical properties in a local site of the integrated photosensors and thier spatial change directly on the photosensors or on test elements. These data provide the parameters of the studies structures, define thier functionality and from the data series for understanding and correct interpretation of the technology of integrated photosensing structures.

4

Electrical and piezoresistive characterization of laser-recrystallized polysilicon layers in SOI srtuctures

Druzhinin A., Lavitska E., Maryamova I., Pankevich I., Pankov Y.

Electron Technology

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1999

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Vol. 32, No. 1/2

146-150

EN

Results of theoretical and experimental investigations carried out in order reval possibilities of the microzone laser recrystallization in the technology of piezoresistive mechanical sensors are presented. An expediency criterion of the laser recrystallization in sensor technology has been defined taking into consideration rise of the gauge factor as well as temperature-depended characterization of SOI layers.

5

Digital CMOS array based on SOI structures

Druzhinin A., Kogut I.

Electron Technology

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1999

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Vol. 32, No. 1/2

142-145

EN

The special features in design and technology of a CMOS array on the basis of SOI structures as well as its main electrical characterization are considered. CMOS array have been fabricated by the method of scanning laser recrystallization of polysilicon layers. To use optimally the advantages of SOI structures and estimate experimantally thier abilities the array with a regular pattern has been chosen among the variety of IC.