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1

Investigation of barrier height distributions over the gate area of Al-SiO2-Si structures

Piskorski K., Przewłocki H. M.

Journal of Telecommunications and Information Technology

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2007

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nr 3

49-54

EN

Distributions of the gate-dielectric EBG(x, y) and semiconductor-dielectric EBS(x, y) barrier height values have been determined using the photoelectric measurement method. Modified Powell-Berglund method was used to measure barrier height values. Modification of this method consisted in using a focused UV light beam of a small diameter d =0.3 mm. It was found that the EBG(x, y) distribution has a characteristic dome-like shape which corresponds with the independently determined shape of the effective contact potential difference fMS(x, y) distribution. On the other hand, the EBS(x, y) distribution is of a random character. It is shown that the EBG(x, y) distribution determines the shape of the fMS(x, y) distribution. The model of the EBG and EBS barrier height distributions over the gate area has been proposed.

2

Opracowanie fotoelektrycznej metody badania rozkładu napięcia wyprostowanych pasm w płaszczyźnie powierzchni bramki struktur MOS

Piskorski K., Przewłocki H. M.

Elektronika : konstrukcje, technologie, zastosowania

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2006

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Vol. 47, nr 11

9-11

PL

Przedstawiono fotoelektryczną metodę określania rozkładu lokalnych wartości napięcia wyprostowanych pasm VFB w płaszczyźnie (x, y) powierzchni bramki struktur MOS. Do badań rozkładu VFB(x, y) zastosowano fotoelektryczną metodę SLPT (ang. Scanned Light Pulse Technique) [3], W pierwszym etapie badań skupiono się na optymalizacji warunków pomiaru uśrednionej wartości VFB na całej powierzchni bramki, tzn. badano odpowiedź elektryczną struktury MOS na pulsujący strumień światła, przy czym strumień ten obejmował w tym przypadku całą powierzchnię bramki. Mierzona w ten sposób (dla całej powierzchni bramki) wartość VFB jest odpowiednikiem wartości VFB określonej klasyczną metodą charakterystyk C(V) [4, 5]. W pracy przedstawiono podstawy teoretyczne fotoelektrycznej metody pomiaru, opisano stosowany układ pomiarowy oraz przedstawiono wyniki pomiarów, które porównano z wynikami pomiarów VFB klasyczną metodą charakterystyk C(V).

EN

Recently, we have developed a photoelectric measurement method which allows, for the first time, to determine the distribution of the effective contact potential difference (ECPD or φMS) local values over the gate area of MOS structures [1, 2]. We have also shown, for the first time, that in AI-SiO2-Si structures the φMS(x, y) distribution over the gate area is highly non uniform and has a dome-like shape [1, 2]. In this paper we report the results of the first phase in developing a photoelectric measurement method of the flat-band voltage local value distribution VFB(x, y), over the gate area of a MOS structure. It is believed that this VFB(x, y) determination method, together with the already developed φMS(x, y) measurement method will allow determination of the effective charge distribution Qelf(x, y) over the gate area. In the first phase of our research, reported in this paper, we concentrated on optimizing the ways to determine the VFB values averaged over the entire gate area. In the second phase of this research the VFB(x, y) distributions will be determined by the scanning light pulse technique SLPT [3].

3

Distribution of potential barrier height local values at Al-SiO2 and Si-SiO2 inter-faces of the metal-oxide-semiconductor structures

Piskorski K., Przewłocki H.M.

Bulletin of the Polish Academy of Sciences. Technical Sciences

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2006

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Vol. 54, nr 4

461-468

EN

In this work studies of barrier height local values are presented. Distribution of the gate-oxide E BG(x, y) and semiconductor-oxide EBS(x, y) barrier height local values have been determined using the photoelectric measurement methods. Two methods were used to obtain the local values of the barrier heights: modified Powell-Berglund method and modified Fowler method. Both methods were modified in such a way as to allow deter-mination of the EBG(x, y) and EBS(x, y) distribution over the gale area using a focused UV light beam of a small diameter d = 0.3 mm. Measurements have been made on a series of Al-SiO2-Si(n+) MOS structures with semitransparent (tA1 = 35 nm) square aluminum gale (1 x 1 mm2). It bas been found that the EBG(x, y) distribution bas a characteristic dome-like shape, with highest values at the center of the gate, lower at the gate edges and still lower at gate corners. On the contrary, the EBS (x, y) distribution is of a random character. Also, in this paper, both barrier height measurements have been compared with the photoelectric effective contact potential difference [fi]MS(x, y) measurements. These results show geod agreement between distribution of the barrier heights EBC(x, y) and EBs(x, y) measurements and independenty determined shape of the ef-fective contact potential difference [fi]M S ( x, y) distribution.

4

Comparison of the barrier height measurements by the Powell method with the phi MS measurement results

Piskorski K., Kudła A., Rzodkiewicz W., Przewłocki H. M.

Journal of Telecommunications and Information Technology

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2005

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nr 1

120-123

EN

In this work, we have compared the barrier height measurements carried out using the Powell method with the photoelectric effective contact potential difference (phi MS) measurement results. The photoelectric measurements were performed on the samples that were previously applied in the investigation of the influence of stress on the duration of annealing in nitrogen. This paper shows that the results of barrier height measurement using the Powell method differ significantly from the phi MS measurement results.