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Wyznaczanie rozkładów głębokościowych domieszek metodą PIPE

Pyszniak K., Gluba Ł., Turek M., Droździel A., Filiks J., Wójtowicz A., Żuk J., Mączka D.

Elektronika : konstrukcje, technologie, zastosowania

2011

Vol. 52, nr 11

50-52

Omówiono zastosowanie metody PIPE (Particie Induced Photon Emission) do wyznaczania rozkładów głębokościowych domieszek. Omawiana metoda pozwala również na dość dokładne wyznaczanie współczynników rozpylania... Artykuł zawiera opis stosowanej aparatury, krótkie omówienie procedury pomiarowej, oraz porównanie otrzymanych wyników z symulacjami komputerowymi.

The application of PIPE (Particle Induced Photon Emission) method for dopant depth profiling is described. The method gives also a possibility to determine sputtering yields for targets. The paper contains the description of an experimental setup and the applied method, as well as the comparison of the obtained results with computer simulations.

SIMS depth profiling of thin boron nitride insulating films

Cwil M., Firek P., Konarski P., Werbowy A.

Materials Science Poland

2008

Vol. 26, No. 1

135--141

Secondary ion mass spectrometry (SIMS) has been used to determine depth profiles of thin boron nitride films adapted as insulators in metal-insulator-semiconductor (MIS) devices. The negative secondary ion detection has been chosen to overcome the sample surface charging due to Ar+ primary ion beam bombardment and to determine the elemental distribution without an electron flood gun treatment. Thin boron nitride films of 20-200 nm thickness were obtained by the radiofrequency plasma-assisted chemical vapour deposition method on Si-substrate with various flows of the gas source. The effect of silicon diffusion from the substrate into the insulator on nitrogen detection due to multiply charged Si ion mass interferences is observed. In order to entirely eliminate the silicon contribution to nitrogen signal in SIMS, we propose to produce BN film on two substrates (e.g., Si and GaAs) simultaneously and then to determine the nitrogen profile. The data obtained for MIS devices formed by covering the BN film with Al layer reveal also Al presence in the insulating film.

In-depth and in-plane profiling of light emission properties from semiconductor-based heterostructures

Godlewski M., Wojtowicz T., Goldys E. M., Phillips M. R., Czernecki R., Prystawko P., Leszczynski M., Perlin P., Grzegory I., Porowski S., Bottcher T., Figge S., Hommel D.

Opto-Electronics Review

2004

Vol. 12, No. 4

353-359

Cathodoluminescence (CL) technique is applied for evaluation of in-depth and in-plane variations of light emission from semiconductor heterostructures, including laser diode structures. Light emission properties of heteroepitaxial and heteroepitaxial structures, are studied. We demonstrate possibility of in-depth profiling of complicated multi quantum well structures, which allows us to evaluate light emission characteristics from different regions of, e.g., laser structures. Due to this property of the CL, we can evaluate interconnections between structural quality of the samples and light emission characteristics. Stimulated emission under electron bean pumping is achieved in a conventional CL, set up for selected heterostructures. Thereshold currents for stimulated emission are evaluated from the CL investigations. We demonstrate that potential fluctuations are not fully screened in the active regions of laser structures, even at large excitation densities.