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1

Optymalizacja ustawień panelu fotowoltaicznego amorficznego w Katowicach

Pławecki Mateusz, Rówiński Edward, Płatkowski Łukasz, Bzowski Błażej

Energetyka

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2019

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nr 1

28--30

PL

W artykule przedstawiono badania optymalizacji osiągnięcia maksymalnej mocy i energii elektrycznej dla ustawień paneli fotowoltaicznych względem poziomu dla trzech okresów czasowych, czyli najniższe, pośrednie oraz najwyższe górowanie Słońca w mieście Katowice. Przedmiotem badań był krzemowy panel fotowoltaiczny amorficzny o mocy ≥ 128 W. Wykazano, że koncepcja zróżnicowanego ustawienia paneli jest optymalna przy kątach: 19°, 48° i 73° w skali roku. Ponadto usytuowanie paneli w terenie górskim lub wyżynnym (Katowice) podnosi ich wydajność od 1% do 5% w zależności od kąta. Panele o orientacji południowej przetwarzają na energię elektryczną ponad kilka lub kilkanaście procent energii ze Słońca, przy czym ponad 80 procent energii pozyskiwane jest wiosną, latem i jesienią, a 17 procent w zimie.

EN

Presented is research on optimization of achieving maximum power and electric energy from positioning of PV panels in relation to the horizontal plane in three time periods i.e. the lowest, medium and the highest zenith points that the sun reaches in the city of Katowice.The subject of this research was an amorphous silicon PV panel with the power rate of 128 W. Proved is that the concept of differentiated panel positioning is optimal at angles of 19°, 48° and 73° in a year’s scale. Additionally, location of panels in a mountain or an upland (Katowice) area improves their efficiency by 1-5% depending on the angle. South-facing panels convert more than several or even more than a dozen per cent of solar energy into electricity, with more than 80% of this energy acquired in spring, summer and autumn, and 17% in winter.

2

Bezpośrednia radiografia cyfrowa

Jezierski G.

Postępy Techniki Jądrowej

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2017

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z. 2

37--44

PL

Dynamiczny rozwój radiografii cyfrowej (bazującej na elektronice) jaki obserwujemy w ostatnich latach skutkuje także zastosowaniem tej techniki do badań nieniszczących w przemyśle (NDT). Jednakże biorąc pod uwagę istotne różnice, przede wszystkim znacznie wyższe energie promieniowania rentgenowskiego stosowane do badania różnych obiektów przemysłowych (np. złącza spawane, odlewy, połączenia w elektronice), jak również konieczność dysponowania niekiedy lekkimi, przenośnymi detektorami powoduje, że nie da się bezpośrednio przenieść rozwiązań z medycyny do przemysłu. W niniejszej publikacji przedstawiono współczesne trendy oraz praktyczne rozwiązania detektorów cyfrowych do zastosowań w NDT.

EN

Application of digital radiography (based on electronics) for imaging in medical practice has been recently dynamically developing, which results in implementation of this technique to industrial non-destructive testing (NDT). However, with respect to significant differences that include, first of all, much higher X-ray energies used for testing various object in industry (e.g. welds, castings, joints in electronic engineering) and often also necessity of using light, portable digital detectors, it is impossible to transfer solutions directly from medicine to industry. In this paper, modern trends and practical solutions of digital detectors designed for NDT are presented.

3

Degradation of flexible thin-film solar cells due to a mechanical strain

Sibiński M., Znajdek K.

Opto-Electronics Review

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2017

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Vol. 25, No. 1

33--36

EN

Many variants of thin film technology are nowadays part of the photovoltaic market. The most popular are amorphous silicon, CIS (Copper Indium Selenide)/CIGS (Copper Indium Gallium Selenide)/CIGSS (Cop-per Indium Gallium Sulphur Selenide), and CdS/CdTe (Cadmium Sulphide/Cadmium-Telluride) cells. All mentioned types allow potentially for a flexible cell structure. Most emitter contacts are currently based on TCOs (Transparent Conductive Oxides), however, wider approach with alternative carbon nanoforms, silver nanolayers and polymer materials, called TCLs (Transparent Conductive Layers) are also in use. Authors decided to investigate influence of mechanical stresses on physical and electrical behaviour of these layers. Consequently, the aim of work is to determine the level and possible mechanisms of flexible a-Si cell parameters degradation due to a deterioration of transparent contact properties.

4

Amorphous Dielectric Thin Films with Extremely Low Mechanical Loss

Liu X., Queen D. R., Metcalf T. H., Karel J. E., Hallman F.

Archives of Metallurgy and Materials

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2015

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Vol. 60, iss. 1

359--363

EN

The ubiquitous low-energy excitations are one of the universal phenomena of amorphous solids. These excitations dominate the acoustic, dielectric, and thermal properties of structurally disordered solids. One exception has been a type of hydrogenated amorphous silicon (α-Si:H) with 1 at.% H. Using low temperature elastic and thermal measurements of electron-beam evap-orated amorphous silicon (α-Si), we show that TLS can be eliminated in this system as the films become denser and more structurally ordered under certain deposition conditions. Our results demonstrate that TLS are not intrinsic to the glassy state but instead reside in low density regions of the amorphous network. This work obviates the role hydrogen was previously thought to play in removing TLS in α-Si:H and favors an ideal four-fold covalently bonded amorphous structure as the cause for the disappearance of TLS. Our result supports the notion that α-Si can be made a “perfect glass” with “crystal-like” properties, thus offering an encouraging opportunity to use it as a simple crystal dielectric alternative in applications, such as in modern quantum devices where TLS are the source of dissipation, decoherence and 1/f noise.

PL

Wszechobecne niskoenergetyczne wzbudzenia są jednym z powszechnych zjawisk w amorficznych ciałach stałych. Wzbudzenia te dominują akustyczne, dielektryczne i termiczne właściwości strukturalnie nieuporządkowanych ciał stałych. Wyjątkiem jest rodzaj uwodornionego amorficznego krzemu (α-Si:H) o zawartości 1 at.% H. Na podstawie niskotemperaturowych badań własności sprężystych i termicznych krzemu amorficznego (α-Si) naparowanego wiązką elektronów wykazaliśmy, że w pewnych warunkach osadzania można wyeliminować TLS w tym układzie tak, że warstwy stają się gęstsze i strukturalnie bardziej uporządkowane. Uzyskane przez nas wyniki wskazują, że TLS nie są nieodłączną cechą stanu szklistego, ale lokują się w regionach o niskim zagęszczeniu sieci amorficznej. Praca niniejsza wyjaśnia, że wodór nie pełni roli w usuwaniu TLS w α-Si:H, jak dotąd sądzono, i wskazuje na idealną czterokrotnie kowalencyjnie związaną amorficzną strukturę jako przyczynę znikania TLS. Nasz wynik potwierdza koncepcję, że z α-Si można wytworzyć “doskonałe szkło” o “podobnych do krystalicznych” właściwościach, oferując w ten sposób zachęcającą możliwość wykorzystania go alternatywnie jako prosty krystaliczny dielektryk w takich aplikacjach jak w nowoczesne urządzenia kwantowe, gdzie TLS są źródłem dyssypacji dekoherencji i szumu 1/f.

5

Nowa metoda regeneracji modułów fotowoltaicznych z amorficznego krzemu

Grzesiak W., Radziemska E.

Przegląd Elektrotechniczny

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2009

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R. 85, nr 11

129-131

PL

Efekt degradacyjny Staeblera-Wrońskiego powoduje spadek sprawności ogniw fotowoltaicznych z amorficznego krzemu do 40% wartości początkowej. Stosunkowo skuteczną metodą regeneracji modułów z amorficznego krzemu jest metoda termiczna, polegająca na podgrzewaniu czynnej substancji fotowoltaicznej modułu do określonej temperatury w ciągu określonego czasu. Oba te ostatnie parametry nie zostały jak dotąd zoptymalizowane zarówno z racji nowości idei, jak i braku skutecznie i racjonalnie działającego oprzyrządowania. Przedsięwzięcia techniczne i wysiłki zainicjowane niniejszym opracowaniem mają na celu wytyczyć ramy termicznej metody regeneracyjnej modułów PV, odsłonić jej perspektywy i ograniczenia.

EN

Photoconductivity and dark conductivity of a-Si:H decrease as a result of prolonged exposure to light. This effect, discovered by Staebler and Wronski, is reversible and the original conductivities could be recovered by annealing. The process of annealing can be performed by application of small flat heaters above the surface of modules. This way a substantial regeneration degree of degraded modules efficiency can be achieved. The degree of efficiency recovery is a function of temperature and time of exposure to heating. Thermal annealing of modules at lower temperature (90 ÷ 110oC) is possible. This annealing process lasts at least 12 – 15 hours. The method looks to be energetically efficient and practically applicable.

6

Uncooled microbolometer detector: recent developments at ULIS

Tissot J. L., Trouilleau C., Fieque B., Crastes A., Legras O.

Opto-Electronics Review

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2006

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Vol. 14, No. 1

25-32

EN

Uncooled infrared focal plane arrays are being developed for a wide range of thermal imaging applications. Fire-fighting, predictive maintenance, process control and thermography are a few of the industrial applications which could take benefit from uncooled infrared detector. Therefore, to answer these markets, a 35-µm pixel-pitch uncooled IR detector technology has been developed enabling high performance 160x120 and 384x288 arrays production. Besides a wide-band version from uncooled 320x240/45 µm array has been also developed in order to address process control and more precisely industrial furnaces control. The ULIS amorphous silicon technology is well adapted to manufacture low cost detector in mass production. After some brief microbolometer technological background, we present the characterization of 35 µm pixel-pitch detector as well as the wide-band 320x240 infrared focal plane arrays with a pixel pitch of 45 µm.

7

Light-emitting thin-film field-effect transistors

Stallinga P., Gomes H.L.

Optica Applicata

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2006

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Vol. 36, nr 2-3

373-380

EN

A model for thin-film field-effect transistors in which the active layer is treated as purely two-dimensional is applied to ambipolar devices that have shown to be light emitting. This results in an adequate description of the electrical characteristics.

8

IR detection with uncooled focal plane arrays. State-of-the art and trends

Tissot J. L.

Opto-Electronics Review

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2004

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Vol. 12, No. 1

105--109

EN

The emergence of uncooled detectors has opened new opportunities for IR detection for both military and commercial applications. Development of such devices involves a lot of trade-offs between the different parameters that define the technological stack. These trade-offs explain the number of different architectures that are under worldwide development. The key factor is to find a high sensitivity and low noise thermometer material compatible with silicon technology in order to achieve high thermal isolation in the smallest area as possible. Ferroelectric thermometer based on hybrid technology and electrical resistive thermometer based (microbolometer) technology are under development. However, ferroelectric material suffers from the difficulty to achieve a high figure of merit from thin film that is needed for monolithic structure development. Besides, the microbolometer technology, well adapted for thin film process, leads to higher performance at the expense of more complex readout integrated circuit design. LETI and ULIS have been chosen from the very beginning to develop first, a monolithic microbolometer technology fully compatible with commercially available CMOS technology and secondly, amorphous silicon based thermometer. This silicon approach has the greatest potential for reducing infrared detector manufacturing cost. After the development of the technology, the transfer to industrial facilities has been performed in a short period of time and the production is now ramping up with ULIS team in new facilities. LETI and ULIS are now working to facilitate the IRFPA integration into equipment in order to address a very large market. Achievement of this goal needs the development of smart sensors with on-chip advanced functions and the decrease in manufacturing cost of IRFPA by decreasing the pixel pitch and simplifying the vacuum package. We present in this paper the new designs for readout circuit and packages that will be used for 384×288 and 160×120 arrays with a pitch of 35 um and advanced results on 35 žm pixel pitch arrays. Thermographic application needs high stable infrared detector with a precise determination of the amount of absorbed infrared flux. Hence, infrared detector with internal temperature stabilized shield has been developed and characterised. The results will be presented.

9

UHV plasma enhanced CVD system for preparation of new generation amorphous silicon based efficient solar cells

Jonas S., Rava P., Stapinski T., Walasek E.

Opto-Electronics Review

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2001

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Vol. 9, No. 1

91-95

EN

Plasma enhanced chemical vapour deposition (PECVD) is used in the deposition of various thin films such as amorphous silicon, nitrides, oxides and diamond-like carbon. The authors succeeded in preparation of photovoltaic intrinsic a-Si : H with density of 10¹⁶ cm⁻³ and high photocontuctivity gain. These films are the constituents of homojunction p-i-n solar cells or heterojunction type with silicon-carbon window layer of efficiency over 10%. The microwave plasma chemical vapour deposition (MWCVD) seems to be a promising method for the deposition of passivation layers.

10

Metastability problems in amorphous silicon

Pietruszko S.M., Kostana M.

Journal of Telecommunications and Information Technology

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2001

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nr 1

76-79

EN

The results of study of the influence of boron and phosphorous doping and hydrogen content on transport properties and thermally induced metastability of LPCVD a-Si are reported. The thermally induced metastability has been observed in both unhydrogenated and hydrogenated P-doped a-Si films. Metastability is a barrier for wide application of a-Si such solar cells. In this paper we report our studies on the effect of thermally induced metastability in LPCVD a-Si as a function of implanted boron and phosphorous concentration. We have investigated films unhydrogenated and hydrogenated by ion implantation. The results are qualitatively agreed with bond breaking model.

11

Recent advances in understanding of a-Si:H based materials and performance of their solar cells

Wroński C. R., Jiao L., Koval R., Collons R. W.

Opto-Electronics Review

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2000

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Vol. 8, No. 4

275-279

EN

A brief review is presented of some recent results which shed new light on the nature of gap states and the microstructure of high quality a-Si:H materials which can be directly related to improved performance and stability of their solar cells. These results demonstrate that charged, and not just the neutral dangling bond D°, defects have to be included in assessing the quality and stability of a-Si:H for solar cells. It is also shown that the commonly used measurements and their interpretation, solely in terms of neutral dangling bonds and their densities, are inadequate and measurements are discussed which allow the contributions of charged defect states to be evaluated. Recent results are also presented and discussed in which the effects of hydrogen dilution on the growth and microstructure of a-Si:H materials have been characterised using real-time spectroscopic ellipsometry. Guided by the derived deposition phase diagram for these materials, systematic studies could be carried out on p-i-n solar cell structures which have provided insights into the properties of these materials and a systematic approach for improving performance and stability of their solar cells.

12

Formation and relaxation of metastable defects in amorphous silicon

Pietruszko S. M., Kostana M.

Opto-Electronics Review

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2000

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Vol. 8, No. 4

385-387

EN

We studied relaxation of defects formed during fast quenching in low pressure chemical vapour deposition (LPCVD) amorphous silicon with different hydrogen concentrations (from 0.05 at.% to 15 at.%) doped with boron or phosphorous (2 at.%). Results of measurement of dark conductivity after quenching and slow cooling as well as measurement of the isothermal relaxation of dark conductivity after quenching in different temperatures are presented. We found relaxation time higher in P-doped than in B-doped films in the same annealing temperature. Activation energy of relaxation time was independent on hydrogen concentration and was higher for B-doped samples.