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1

Ga2O3 nanowires preparation at atmospheric pressure

Korbutowicz R., Stafiniak A., Serafińczuk J.

Materials Science Poland

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2017

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Vol. 35, No. 2

412--420

EN

An attempt has been undertaken to produce gallium oxide nanowires by thermal synthesis from metallic gallium source at atmospheric pressure. Silicon substrates of (1 0 0) and (1 1 1) orientation with and without silicon oxide layers (0.5 μm) were used as support. Evaporated thin gold films were deposited on the top of those silicon carriers as a catalytic agent. After thermal treatment by Rapid Thermal Processing RTP (at various temperatures and times), which was applied to make small Au islands with the diameters of about several tens of nanometers, the substrate surfaces were observed by SEM. The Ga2O3 syntheses were made at various conditions: time, temperature and gas mixture were changed. As a result, monoclinic gallium oxide β- Ga2O3 nanostructures with dominant [1 1 1] and [0 0 2] growth directions were grown. The obtained nanostructures of several tens micrometers length were studied by SEM, PL and X-ray methods.

2

Wybrane zagadnienia metrologii mikro- i nanostruktur

Gotszalk T., Jóźwiak G., Kowalski Z., Nitsch K., Piasecki T., Radojewski J., Sankowska A., Serafińczuk J., Szecówka P.

Elektronika : konstrukcje, technologie, zastosowania

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2012

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Vol. 53, nr 2

40-47

PL

W artykule przedstawione zostały metody i techniki badań materiałów stosowanych we współczesnej mikro- i nanoelektronice oraz konstruowanych obecnie przyrządów i podzespołów. Metody bazujące na spektroskopii impedancyjnej, skaningowej mikroskopii elektronowej, mikroskopii bliskich oddziaływań, technikach jonowych, dyfraktometru rentgenowskiej, optoelektronice i technice światłowodowej, przetwarzaniu sygnałów i cyfrowych układach sterujących są rozwijane w Zakładzie Metrologii Mikro- i Nanostruktur od 2006. Dzięki integracji wspomnianych technik i ich odmian, dodatkowo z wykorzystaniem układów mikroelektromechanicznych, możliwe jest rozwiązanie wielu problemów, stojących przed współczesną metrologią mikro- i nanostruktur.

EN

In this paper, new methods of investigation of novel materials used and new tools and systems constructed in the course of the development of micro- and nanotechnology. Methods based on impedance spectroscopy, scanning electron microscopy, scanning probe microscopy, ion techniques, X-ray diffraction, optoelectronics and fiber techniques, signal processing and digital control devices have been developed in the Division of Metrology of Micro- and Nanostructures since 2006. By combining above-mentioned methods and their variations and including usage of microelectromechanical systems it is possible to solve various problems of modern metrology of micro- and nanostructures.

3

AP-MOVPE technology of AIIIBV-N heterostructures for photovoltaic applications

Dawidowski W., Ściana B., Pucicki D., Radziewicz D., Serafińczuk J., Latkowska M., Tłaczała M.

Elektronika : konstrukcje, technologie, zastosowania

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2012

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Vol. 53, nr 6

111-113

EN

This paper presents the influence of the AP-MOVPE epitaxial process growth temperature on the optical and structural properties of heterostructures containing InGaAsN quantum wells. The best optical and structural features were observed for MQW structure grown in highest temperature. This structure (sample NI 46) was applied in the test p-i-n solar cell construction. Measured dc I-V characteristics exhibit electrical response under the optical excitation by a discrete laser diode with λ = 980 nm, what confirms the usability of InGaAsN semiconductor compounds in solar cell applications.

4

Thin film thickness determination using X-ray reflectivity and Savitzky-Golay algorithm

Serafińczuk J., Pietrucha J., Schroeder G., Gotszalk T.

Optica Applicata

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2011

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Vol. 41, nr 2

315--322

EN

X-ray reflectivity (XRR) is one of the primary measurement techniques for thickness calculation of thin films and multilayer period determination. This technique can also be used for the analysis of organic thin film multilayer structures. In this method, the accuracy of thickness calculation depends on precision of the determination of the local maxima of XRR curve. The analysis of the XRR curves is cumbersome because of the noise which is recorded while measurement. It can be improved using computer data analysis algorithms for noise reduction and determination of the local maxima on the XRR curve. One of such algorithms, widely used in the data spectroscopy analysis, is Savitzky-Golay (S-G) algorithm. In this paper, the application of S-G algorithm for thickness determination of self-assembled ion liquid nanolayer of dimethyldiallylammonium chloride (PDDA) is shown.

5

32-kanałowy cyfrowy regulator PID na bazie układu FPGA do zastosowań w mikroskopii sił atomowych

Nowacki Z., Zawierucha P., Serafińczuk J., Woszczyna M., Sawicki P., Zielony M., Szecówka P., Gotszalk T.

Elektronika : konstrukcje, technologie, zastosowania

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2010

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Vol. 51, nr 2

109-113

PL

W artykule została przedstawiona konstrukcja i zasada działania wielokanałowego cyfrowego regulatora PID skonstruowanego dla mikroskopu sił atomowych korzystającego z matrycy sond pomiarowych. Nasze rozwiązanie zostało zrealizowane w oparciu o układ FPGA. Dzięki temu uzyskano zwartą konstrukcję, jednak pozwalającą na elastyczną zmianę parametrów regulatorów PID oraz ilości kanałów.

EN

In this article a digital multichannel PID controller for atomic force microscope with an array of probes is presented. Our design is based on FPGA. In this case, we developed compact device but it allows to modify PlD controllers parameters and amout of channels.

6

Technology and characterisation of GaAsN/GaAs heterostructures for photodetector applications

Ściana B., Zborowska-Lindert I., Pucicki D., Boratyński B., Radziewicz D., Tłaczała M., Serafińczuk J., Poloczek P., Sęk G., Misiewicz J.

Opto-Electronics Review

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2008

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Vol. 16, No. 1

1-7

EN

The nitrogen-containing AIIIBV semiconductor alloys, so-called diluted nitrides (AIIIBV-N, have been extensively studied recently. Unusual properties of these materials make them very promising for applications in lasers and very efficient multijunction solar cells. This work presents the technology and properties of undoped GaAs1-xNxGaAs heterostructures used as active regions in the construction of metal-semiconductor-metal (MSM) photodetectors. The atmospheric pressure metal organic vapour phase epitaxy (APMOVPE) was applied for growing MSM test structures. Their structural and optical properties were examined using high resolution X-ray diffraction (HRXRD), photoluminescence (PL), and photoreflectance spectroscopy (PR). Chemical wet etching was applied for forming an active region and a multifinger Schottky metallization was used as MSM contacts. Dark and illuminated current-voltage characteristics were measured. Based on the obtained results, the main detector parameters as responsivity and spectral response were estimated.

7

Determination of indium and nitrogen content in four-component epitaxial layers of InxGa1-xAs1-yNy deposited on GaAs substrate

Serafińczuk J., Kozłowski J.

Materials Science Poland

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2008

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Vol. 26, No. 1

207--212

EN

The paper presents a new method of determination of the percentage content of indium (x) and nitrogen (y) in four-component epitaxial layers of InxGa1-xAs1-yNy, based on a distance between a layer and a substrate reflection for rocking curves obtained from high resolution X-ray diffraction. In the method, a symmetrical (004) and at least two asymmetrical (e.g., (224) and (115)) reflections are taken into consideration. For the investigated ranges of the values of the x, y parameters of the four components, we have described the dependences of distances between reflections .delta..vpi.(004) = f1(x,y), .delta..vpi.(224) = f2(x,y), .delta..vpi.(115) = f3(x,y) based on the rocking curve simulation software HRS (High Resolution Simulation - Philips). Based on the result, we present a procedure which allows us to characterize parameters of the epitaxial layers. The properties of the proposed procedure have been verified on experimental examples.

8

Anisotropic strain relaxation and surface morphology related to asymmetry in the formation of misfit dislocations in InGaAs/GaAs heterostructures

Gelczuk Ł., Dąbrowska-Szata M., Serafińczuk J., Masalska A., Łusakowska E., Dłużewski P.

Materials Science Poland

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2008

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Vol. 26, No. 1

157--166

EN

Partially relaxed InGaAs/GaAs heterostructures with a small lattice mismatch (less than 1%), grown by metalorganic vapour-phase epitaxy have been studied by the transmission electron microscopy, atomic force microscopy as well as X-ray diffractometry. A regular network of 60st.?misfit dislocations formed at the (001) interface in two orthogonal <110>?crystallographic directions has been revealed. A close correspondence between distribution of the interfacial misfit dislocations and undulating surface morphology in the form of a characteristic cross-hatch pattern has been observed. The structural analysis applied for the samples oriented either in [110] or [110] perpendicular directions, using reciprocal lattice mapping, revealed anisotropic strain relaxation, related to the asymmetry in the formation of alfa ?and beta ?misfit dislocations along these both directions, respectively.

9

Mikroskopia bliskiego pola Shear Force/sił atomowych z interpretacją wyników poddanych transformacie FFT

Sikora A., Gotszalk T., Szeloch R. F., Serafińczuk J., Jóźwiak G.

Elektronika : konstrukcje, technologie, zastosowania

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2008

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Vol. 49, nr 11

220-222

PL

W pracy zaprezentowano wstępne wyniki prac związanych z wykorzystaniem mikroskopii Shear Force do diagnostyki powierzchni. W metodzie tej ostrze skanujące wprawiane jest w drgania równolegle do powierzchni w częstotliwością bliską rezonansu, a następnie mierzona jest amplituda tych oscylacji w celu określenia odległości ostrza od powierzchni. Należy podkreślić fakt, iż ostrze znajduje się w odległości kilku-kilkunastu nanometrów od powierzchni, przez co metodę tą można zakwalifikować jako bezkontaktową. Do wykonania badań wykorzystano stanowisko własnej konstrukcji. Dodatkowo, technika detekcji oddziaływań bliskiego pola Shear Force połączona została z funkcją pomiaru prądu emisji z powierzchni skanowanej, co umożliwiło tworzenie map właściwości elektrycznych próbki. Przeprowadzenie dwuwymiarowej transformaty FFT pozwoliło na zaprezentowanie nowego sposobu analizy wyników pomiarów.

EN

The Shear Force Microscopy (SHFM) and some preliminary results of the surface measurements are presented. In this technique the tip oscillates laterally to the surface near one of its resonant frequencies and the tip's oscillation amplitude is measured in order to estimate the tip-sample distance. It must be emphasized that the tip maintains the distance of several nanometers from the surface; thereby this method can be classified as non-contact. The home-made instrument was used to perform the experiments. Additionally, the Shear Force technique was combined with surface emission measurement feature, which allowed to create a "map" of electrical surface properties. By performing the FFT transforms of the results, new analysis approach was presented.

10

Wavelet shrinkage-based noise reduction from the high resolution X-ray images of epitaxial layers

Kozłowski J., Serafińczuk J., Kozik A.

Materials Science

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2003

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Vol. 21, No. 3

345-356

EN

This paper presents advantages of employing the wavelet method in X-ray high-resolution image analysis of nanostructures. It is shown that many more details of the structure examined can be distin-guished in rocking curves (RC) as well as in reciprocal space maps (RSM) after application of the numerical procedure. The method proposed seems to be particularly suitable for imperfect epitaxial layers having significant lattice mismatch with respect to substrate. By means of the wavelet analysis of the X-ray images using de-noising procedure details invisible in raw pictures can be detected such as thickness fringes, gradient of lattice parameters etc., and duration of measurements can be shortened.