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Crystal growth and characterisation of In-rich phases in Cu-In-Ga-Se system

Filipowicz J. I., Bacewicz R., Wolska A.

Opto-Electronics Review

2000

Vol. 8, No. 4

372-374

Technological parameters of crystal growth using Bridgman-Stockbarger method for some materials of Cu-In-Se and Cu-In-Ga-Se systems are presented. Single crystals as large as 1 cm³ have been grown. The composition variation along crystal ingots was determined by the microprobe analysis. A strong segregation effect is observed. Crystals with composition close to the compounds with nominal compositions Cu₂In₄Se₇, CuIn₃Se₅, CuIn₅Se₈, CuGa₃Se₅ and Cu(In₀.₈Ga₀.₂)₃Se₅ were identified. Photolumiscence spectra of the crystals from the Cu-In-Se system were measured and analysed in terms of quasi-donor-acceptor transitions.

Optical absorption and photovoltaic spectra induced by excito resonance in GaAs/GaAlAs multiple quantum wells

Filipowicz J. I.

Electron Technology

1998

Vol. 31, No. 3/4

301-303

Optical absorption and photovoltaic spectra of GaAs/GaAlAs MQW structures, previous measured, are discussed. The thermal broadening of the absorption peaks related to n = 1 exition states is explained in the light of interaction with the two types thermal phonons (LO in GaAs and new due to an inhomogeneity near the well-barrier interface). The energy of new phonons for two different MQW structures is fitted as E1 = 30 meV and E2 = 16 meV. The intensity of the photovoltaic peaks showed non-monotonic behaviour with a minimum at about 100 K. This minimum is explained as a consequence the maximum of the exciton lifetime in the same region of temperature for these MQW structures.