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1
Content available remote Post-deposition stress evolution in Cu and Ag thin films
Chocyk D., Prószyński A., Gładyszewski G., Pieńkos T., Gładyszewski L.
Optica Applicata
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2005
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Vol. 35, nr 3
419-424
EN
Evolution of stresses in thin Cu and Ag films after deposition by thermal evaporation in UHV system is studied. Thin films were deposited on 100 um thick Si substrate at room temperature. Deposition rates for the Cu and Ag films were 0.5 A/s and 0.9 A/s, respectively. The total thickness ranged from 7.7 up to 109 nm. The average stress in the films was determined by measuring the radius of samples curvature. The behavior of stress evolution curves is explained by two mechanisms of stress generation: filling grain boundaries and islands coalescence.
2
Content available remote Measurement of stress as a function of temperature in Ag and Cu thin films
Prószyński A., Chocyk D., Gładyszewski G., Pieńkos T., Gładyszewski L.
Optica Applicata
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2005
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Vol. 35, nr 3
517-522
EN
Stress measurements of 23 nm copper films and 93 nm silver films on Si (100) have been performed during thermal cycling between RT and 450°C. The changes in stress versus temperature are interpreted. The effects of treatment on microstructure and composition are studied by X-ray diffraction.
3
Content available remote Determination of surface waviness using radius of curvature measurement with laser scanning technique
Pieńkos T., Gładyszewski L., Prószyński A., Chocyk D., Gładyszewski G.
Optica Applicata
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2005
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Vol. 35, nr 3
503-507
EN
A method for obtaining the shape of a surface investigated with a laser scanning curvature measurement is presented. Additional simple analysis of raw experimental data allows one to determine waviness of the sample. The accuracy of the method and comparison of the results obtained with the method and commercial profilometer are also described.
4
Content available remote Ultra-low frequency spectra for Li+ ion thermoemission noise
Gładyszewski L.
Optica Applicata
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2002
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Vol. 32, nr 3
235-239
EN
The surface diffusion of Li on polycrystalline tungsten and ionic thermal desorption are studied by a method based on the Li ion current noise arising from the fluctuation of the work function as a result of random fluctuations of the Li adsorbate density. The activation energy for surface diffusion of Li has been determined by measuring the spectral density functions and their parameters depending on temperature.
5
Content available remote Measurements of stress during ion irradiation
Pieńkos T., Gładyszewski L., Chocyk D., Prószyński A., Gładyszewski G., Martin F., Jaouen Ch.
Optica Applicata
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2002
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Vol. 32, nr 3
421-424
EN
The exemplary results obtained with a simple optical set-up for the measurement of curvature radius during ion implantation are presented. The Kr ion irradiation was performed for silicon substrate without a film. After the irradiation the implanted region of silicon was under compressive stress. Maximum of the stress was evidenced for a dose of 1×1014 ions/cm2. The optical set-up is very flexible and may cooperate with various apparatus
6
Strain in multilayered systems and its influence on asymmetric X-ray diffraction profiles
Chocyk D., Gładyszewski G., Pienkos T., Gładyszewski L.
Electron Technology
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2000
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Vol. 33, No. 3
329-333
EN
The paper presents the results of the validity test of the sin²Ψ method applied for determining strains in a case of multilayer systems. The calculations were performed using three-dimensional model based on a Monte Carlo simulation and the kinematical theory of scattering. Our calculations show that the analysis of strains in multilayers performed using the sin²Ψ method may give misleading results and therefore should be accompanied by other methods.
7
Statistical properties of ion pulse emission of natural inpurities from tungsten investigated at hight temperatures
Gładyszewski L., Reszka A.
Electron Technology
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1998
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Vol. 31, No. 3/4
499-501
EN
The thermal emisson of positive K⁺ ions from a tungsten filament occuring as positive pluses (bursts) [1,2] were investigated. Duration of a pulse was about 10 µm and each pulse corresponded to the emission of a group of 10³ to 10⁶ single charged ions. It was observed that the potassium ions originating from the impurities deposited in cavities and dislocations in the polycrystalline tungsten filament. The paper presents statistical parameters of this emission.
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