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On possibility to extend the operation temperature range of SOI sensors with polysilicon piezoresistors

Druzhinin A., Lavitska E., Maryamova I., Kogut I., Khoverko Y.

Journal of Telecommunications and Information Technology

2001

nr 1

40-45

The aim of this work was to study the possibilities of developing mechanical sensors with poly-Si piezoresistors on insulating substrate for operation in different temperature ranges (low, elevated and high temperatures). Laser recrystallization is used as a technological tool to adjust the electrical and piezoresistive parameters of the polysilicon layer. For this purpose a set of studies including numerical simulation and experimental work has been carried out. The main three directions of the studies are considered: problems of thermal stabilization of the pressure sensor performance at elevated and high temperatures; problem of sensor operation at cryogenic temperatures; development of a multifunctional pressure-temperature sensor.

Electrical and piezoresistive characterization of laser-recrystallized polysilicon layers in SOI srtuctures

Druzhinin A., Lavitska E., Maryamova I., Pankevich I., Pankov Y.

Electron Technology

1999

Vol. 32, No. 1/2

146-150

Results of theoretical and experimental investigations carried out in order reval possibilities of the microzone laser recrystallization in the technology of piezoresistive mechanical sensors are presented. An expediency criterion of the laser recrystallization in sensor technology has been defined taking into consideration rise of the gauge factor as well as temperature-depended characterization of SOI layers.