Wyniki wyszukiwania - Biblioteka Nauki

1

Photoreflectance study of Al0.45Ga0.55As/GaAs superlattice: optical transitions at the miniband .GAMMA. and .PI. points

100%

Motyka M. , Sęk G. , Janiak F. , Ryczko K. , Misiewicz J. , Kosiel K. , Bugajski M.

Optica Applicata

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2009

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tom Vol. 39, nr 4

897-902

EN

In this paper, we present the results of photoreflectance (PR) investigation of an Al0.45Ga0.55As/GaAs superlattice (SL). The modulation spectra have revealed a number of features at both room and low temperature (10 K) which could be associated with the optical transitions between the minibands of the superlattice. Based on calculations within the effective mass approximation they have been identified as transitions between the miniband edges, i.e., the so-called ? and ? points, respectively, including the high index transitions and those related to the light holes. Tuning the structure parameters around the nominal ones treated as semi-free in the theoretical considerations allowed the growth accuracy of such a complex system to be verified.

2

Correlation between physical properties of superlattices obtained by means of electrochemical deposition method and ion spraying

100%

Duś-Sitek M. , Nabiałek M. , Gągorowska B.

Optica Applicata

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2009

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tom Vol. 39, nr 4

645-653

EN

This paper compares structural and magnetic properties of Cu/Ni and Ni/Cu multilayer systems obtained by means of ion sputtering and electrochemical deposition method. The impact of both thickness of Cu and Ni sublayers and a number of bilayers repetition on magnetic properties was also investigated. The purpose of this work was to verify which method for multilayer system deposition enables samples of better structural and magnetic properties to be obtained.

3

Low-temperature growth of InAs/GaSb superlattices on miscut GaAs substrates for mid-wave infrared detectors

100%

Martyniuk P. , Benyahia D.

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2023

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tom Vol. 31, Special Issue

art. no. e144557

EN

Short-period 10 monolayers InAs/10ML GaSb type-II superlattices have been deposited on a highly lattice-mismatched GaAs (001), 2° offcut towards <110> substrates by molecular beam epitaxy. This superlattice was designed for detection in the mid-wave infrared spectral region (cut-off wavelength, λcut-off = 5.4 μm at 300 K). The growth was performed at relatively low temperatures. The InAs/GaSb superlattices were grown on a GaSb buffer layer by an interfacial misfit array in order to relieve the strain due to the ~7.6% lattice-mismatch between the GaAs substrate and type-II superlattices. The X-ray characterisation reveals a good crystalline quality exhibiting full width at half maximum ~100 arcsec of the zero-order peak. Besides, the grown samples have been found to exhibit a change in the conductivity.

4

InAs/GaSb superlattice focal plane arrays for high-resolution thermal imaging

88%

Rehm R. , Walther M. , Schmitz J. , Fleißner J. , Fuchs F. , Ziegler J. , Cabanski W.

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tom Vol. 14, No. 1

19-24

EN

The first fully operational mid-IR (3–5 um) 256x256 IR-FPA camera system based on a type-II InAs/GaSb short-period superlattice showing an excellent noise equivalent temperature difference below 10 mK and a very uniform performance has been realized. We report on the development and fabrication of the detector chip, i.e., epitaxy, processing technology and electro-optical characterization of fully integrated InAs/GaSb superlattice focal plane arrays. While the superlattice design employed for the first demonstrator camera yielded a quantum efficiency around 30%, a superlattice structure grown with a thicker active layer and an optimized V/III BEP ratio during growth of the InAs layers exhibits a significant increase in quantum efficiency. Quantitative responsivity measurements reveal a quantum efficiency of about 60% for InAs/GaSb superlattice focal plane arrays after implementing this design improvement.

5

Interfaces as design tools for short-period InAs/GaSb type-II superlattices for mid-infrared detectors

88%

Szmulowicz F. , Haugan H. J. , Brown G. J. , Mahalingam K. , Ullrich B. , Munshi S. R. , Grazulis L.

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tom Vol. 14, No. 1

71-77

EN

The effect of interface anisotropy on the electronic structure of InAs/GaSb type-II superlattices is exploited in the design of thin-layer superlattices for mid-IR detection threshold. The design is based on a theoretical envelope function model that incorporates the change of anion and cation species across InAs/GaSb interfaces, in particular, across the preferred InSb interface. The model predicts that a given threshold can be reached for a range of superlattice periods with InAs and GaSb layers as thin as a few monolayers. Although the oscillator strengths are predicted to be larger for thinner period superlattices, the absorption coefficients are comparable because of the compensating effect of larger band widths. However, larger intervalence band separations for thinner-period samples should lead to longer minority electron Auger lifetimes and higher operating temperatures in p-type SLs. In addition, the hole masses for thinner-period samples are on the order the free-electron mass rather than being effectively infinite for the wider period samples. Therefore, holes should also contribute to photoresponse. A number of superlattices with periods ranging from 50.6 to 21.2 Å for the 4 µm detection threshold were grown by molecular beam epitaxy based on the model design. Low temperature photoluminescence and photoresponse spectra confirmed that the superlattice band gaps remained constant at 330 meV although the period changed by the factor of 2.5. Overall, the present study points to the importance of interfaces as a tool in the design and growth of thin superlattices for mid-IR detectors for room temperature operation.

6

Transport studies of MBE-grown InAs/GaSb superlattices

88%

Szmulowicz F. , Haugan H. J. , Elhamri S. , Brown G. J. , Mitchel W. C.

Opto-Electronics Review

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2010

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tom Vol. 18, No. 3

267-270

EN

We report on the results of transport studies of MBE-grown InAs/GaSb superlattices. We demonstrate that the in-plane mobility is limited by interface roughness scattering by showing that, as a function of InAs layer width L, the in-plane mobility behaves as μ ∝ L5.3, which closely follows the classic sixth power dependence expected from theory for interface-roughness-limited mobility. Fits to the mobility data indicate that, for one monolayer surface roughness, the roughness correlation length is about 35 Å. Next, we show that the in-plane carrier mobility in InAs/GaSb superlattices is inversely proportional to carrier density in n- and p-type samples, the result of screened interface roughness scattering.

7

The pecularities of structure and diffraction by mis fit mixed-layer nanotubes

88%

Figovsky O. , Pashin D. , Khalitov Z. , Valeeva D. , Chkanov A.

International Letters of Chemistry, Physics and Astronomy

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2012

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tom Vol. 2

7-14

EN

The analysis of diffraction by separate mixed-layer goffered nanotube's lattice is offered. Two extreme cases of the large and small size of coherent scattering regions (CSR) in a radial direction are considered. The qualitative explanation of observed diffraction effects is given.

8

Barrier in the valence band in the nBn detector with an active layer from the type-II superlattice

88%

Kopytko M. , Gomółka E. , Manyk T. , Michalczewski K. , Kubiszyn Ł. , Rutkowski J. , Martyniuk P.

Opto-Electronics Review

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2021

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tom Vol. 29, No. 1

1--4

EN

Numerical analysis of the dark current (Id) in the type-II superlattice (T2SL) barrier (nBn) detector operated at high temperatures was presented. Theoretical calculations were compared with the experimental results for the nBn detector with the absorber and contact layers in an InAs/InAsSb superlattice separated AlAsSb barrier. Detector structure was grown using MBE technique on a GaAs substrate. The k·p model was used to determine the first electron band and the first heavy and light hole bands in T2SL, as well as to calculate the absorption coefficient. The paper presents the effect of the additional hole barrier on electrical and optical parameters of the nBn structure. According to the principle of the nBn detector operation, the electrons barrier is to prevent the current flow from the contact layer to the absorber, while the holes barrier should be low enough to ensure the flow of optically generated carriers. The barrier height in the valence band (VB) was adjusted by changing the electron affinity of a ternary AlAsSb material. Results of numerical calculations similar to the experimental data were obtained, assuming the presence of a high barrier in VB which, at the same time, lowered the detector current responsivity.

9

Supersieci II rodzaju ze związków InAs/GalnSb

75%

Kaniewski J. , Jasik A.

Elektronika : konstrukcje, technologie, zastosowania

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2009

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tom Vol. 50, nr 5

52-58

PL

Supersieci ze związków InAs/GalnSb krystalizowane na podłożu z GaSb umożliwiają wytwarzanie detektorów podczerwieni pracujących w zakresie widmowym 3...25 µm. Supersieci te stanowią atrakcyjną alternatywę dla związków HgCdTe. Technologia otrzymywania supersieci InAs/GalnSb jest we wstępnej fazie rozwoju. Główne trudności związane są z przygotowaniem podłoży do epitaksji oraz z otrzymywaniem skokowych obszarów międzyfazowych w supersieciach. Odrębne zagadnienia dotyczą technologii struktur, prowadzącej do wykonania detektorów oraz ich pasywacji.

EN

A superlattice based lnAs/Ga(ln)Sb system grown on GaSb substrate seems to be attractive alternative to HgCdTe with good spatial uniformity and an ability to span cut-off wavelength from 3...25 µm. The development of InAs/GalnSb superlattice technology is still in progress. Main difficulties are related to substrate preparation and the optimization of interface sharpness. The separate issues are referred to the device processing and their final passivation.

10

Detektory podczerwieni na bazie supersieci II rodzaju ze związków InAs/GaInSb

75%

Kaniewski J. , Gawron W.

Elektronika : konstrukcje, technologie, zastosowania

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2010

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tom Vol. 51, nr 10

87-89

PL

Supersieci ze związków InAs/GaInSb krystalizowane na podłożu z GaSb umożliwiają wytwarzanie detektorów podczerwieni pracujących w zakresie widmowym 3...25 µm. Supersieci te stanowią atrakcyjną alternatywę dla związków HgCdTe. Technologia otrzymywania supersieci InAs/GaInSb jest we wstępnej fazie rozwoju. Główne trudności związane są z przygotowaniem podłoży do epitaksji oraz z otrzymywaniem skokowych obszarów międzyfazowych w supersieciach. Odrębne zagadnienia dotyczą technologii struktur, prowadzącej do wykonania detektorów oraz ich pasywacji.

EN

InAs/GaInSb based superlattices grown on GaSb substrates can be used for fabrication of infrared detectors operating in 3...25 µm spectral range. The superlattices are attractive alternative for HgCdTe compounds. Technology of InAs/GaInSb superlattices is far to be well established. Main difficulties are related to wafer preparation before eptiaxy and superlattice interface quality. Processing, passivation and assembling of detectors are permanently developed.

11

Technology and properties of low-pressure metalorganic vapour phase epitaxy grown InGaAs/AlInAs superlattice for quantum cascade laser applications

75%

Badura M. , Bielak K. , Ściana B. , Radziewicz D. , Pucicki D. , Dawidowski W. , Żelazna K. , Kudrawiec R. , Tłaczała M.

Optica Applicata

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2016

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tom Vol. 46, nr 2

241--248

EN

Quantum cascade laser is one of the most sophisticated semiconductor devices. The active region of the quantum cascade laser consists of hundreds thin layers, thus the deposition precision is the most crucial. The main technique for the fabrication of quantum cascade laser structure is molecular beam epitaxy, however, the prevalence of metalorganic vapour phase epitaxy techniques in the fabrication of semiconductor structures causes a perpetual work on the improvement production of the entire quantum cascade laser structure by the metalorganic vapour phase epitaxy. The paper presents technological aspects connected with the metalorganic vapour phase epitaxy growth of InGaAs/AlInAs low-dimensional structures for quantum cascade laser active region emitting ~9.6 μm radiation. Epitaxial growth of superlattice made of InGaAs/AlInAs lattice matched to InP was conducted at the AIXTRON 3x2″ FT system. Optical and structural properties of such heterostructures were characterised by means of high resolution X-ray diffraction, photoluminescence, contactless electroreflectance and scanning electron microscope techniques. Epitaxial growth and possible solutions of structure improvements are discussed.

12

High-performance IR detectors at SCD present and future

63%

Nesher O. , Klipstein P. C.

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tom Vol. 14, No. 1

61-70

EN

For over 27 years, SCD has been manufacturing and developing a wide range of high performance infrared detectors, designed to operate in either the mid-wave (MWIR) or the long-wave (LWIR) atmospheric windows. These detectors have been integrated successfully into many different types of system including missile seekers, time delay integration scanning systems, hand-held cameras, missile warning systems and many others. SCD's technology for the MWIR wavelength range is based on its well established 2D arrays of InSb photodiodes. The arrays are flip-chip bonded to SCD's analogue or digital signal processors, all of which have been designed in-house. The 2D focal plane array (FPA) detectors have a format of 320×256 elements for a 30-µm pitch and 480×384 or 640×512 elements for a 20-µm pitch. Typical operating temperatures are around 77–85 K. Five years ago SCD began to develop a new generation of MWIR detectors based on the epitaxial growth of antimonide based compound semiconductors (ABCS). This ABCS technology allows band-gap engineering of the detection material which enables higher operating temperatures and multi-spectral detection. This year SCD presented its first prototype FPA from this program, an InAlSb based detector operating at a temperature of 100 K. By the end of this year SCD will introduce the first prototype MWIR detector with a 640×512 element format and a pitch of 15 µm. For the LWIR wavelength range SCD manufactures both linear Hg1–xCdxTe (MCT) detectors with a line of 250 elements and time delay and integration (TDI) detectors with formats of 288×4 and 480×6. Recently, SCD has demonstrated its first prototype uncooled detector which is based on VOx technology and which has a format of 384×288 elements, a pitch of 25 µm, and a typical NETD of 50 mK at F/1. In this paper, we describe the present technologies and products of SCD and the future evolution of our detectors for the MWIR and LWIR detection.

13

Wpływ typu przekładki na transmisję złożenia dwóch struktur binarnych

63%

Szota M.

Informatyka, Automatyka, Pomiary w Gospodarce i Ochronie Środowiska

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2014

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tom nr 3

23--26

PL

W pracy przedstawiono metody symulacji transmisji układów wielowarstwowych oraz zbadano wpływ zmiany typu oraz grubości warstwy materiału rozdzielającego dwie struktury wielowarstwowe. Do analizy wykorzystano metodę macierzową. Wykazano znaczący wpływ niejednorodności wykonania warstwy rozdzielającej (przekładki) na transmisję oraz znacznie mniejszy niedokładności wykonania grubości warstwy.

EN

The paper presents a simulation method of multilayers transmission and examines the impact of changes in the type and thickness of the material separating the two multilayer structures. For the analysis, the matrix method were used. It has been shown significantly influence the implementation of the separation layer inhomogeneities on the transmission and significantly smaller of thickness inaccuracies implementation.

14

Transmission in 3-layered system

63%

Szota M.

Inżynieria Materiałowa

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2014

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tom Vol. 35, nr 2

215--218

EN

The thickness of the layers order of hundreds of nanometers in the multilayer structure causes that light of a given frequency does not propagate in the material. Forbidden frequency range for a given structure is called a photonic band gap. Current technologies allows for the construction of a given superlattice structure. The study analyzed transmission over the three-layer filter ABA-type in the P and S polarization. The base materials were A – NaCl, and B is GaAs. Transmission maps were tested for various materials B when B belonged to right-handed and left-handed materials. The influence of surrounding material and the relationship between the thickness of the layer B, and the properties of the filter. The study demonstrated the existence of differences in the transmission for different polarization. The three-layer structure material showed a transmission band. Using material LHM instead of RHM changed filtration properties of the system. A change of surrounding material has shifted transmission bands towards smaller angles, and there was the phenomenon of electromagnetic wave tunneling.

PL

Grubość warstw rzędu setek nanometrów w strukturze wielowarstwowej powoduje, że fala światła o danej częstotliwości nie propaguje się w materiale. Zakres częstotliwości wzbronionych dla danej struktury nazywany jest fotonicznym pasmem wzbronionym. Obecne technologie pozwalają na budowę supersieci o zadanej strukturze. W pracy analizowano transmisję przez trójwarstwowy filtr ABA dla polaryzacji typu P i S. Materiałami bazowymi były A – NaCl, natomiast B to GaAs. Badano mapy transmisji dla różnych materiałów B, gdy B należało do materiałów prawoskrętnych i lewoskrętnych. Analizowano wpływ materiału otoczenia oraz związek między grubością warstwy B a własnościami filtracyjnymi układu. W pracy wykazano występowanie różnic w transmisji dla różnych polaryzacji. Trójwarstwowy materiał wykazał pasmową strukturę transmisji. Użycie materiału LHM zamiast RHM zmieniło własności filtracyjne układu. Zmiana materiału otoczenia przesunęła pasma transmisji w stronę mniejszych kątów oraz wystąpiło zjawisko tunelowania fali elektromagnetycznej.

15

The picosecond ultrasonic waves in Au/V multilayers

63%

Aleksiejuk M.

Journal of Technical Physics

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2004

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tom Vol. 45, no 3

211-216

EN

A study of picosecond ultrasonic waves propagation in Au/V superlattices in period 30-120 A is presented. Au/V structures were grown by molecular beam epitaxy (MBE) on MgO substrate. High-frequency ultrasonic waves in Au/V structures were generated by using ultrashort laser pulse excitation and detected in real time by measuring the strain-induced change in reflectivity with pump-probe technique. High-frequency oscillations were detected over the first 150 ps. Series of the oscilations were generated when therminated layer is made of the material with the lowest acoustic impedance (vanadium for Au/V multilayer). The author attributes these oscillations to surface mode localized in the frequency band gap of the dispersion curve.

16

The implementation of the electromagnetic wave propagation algorithm in superlattices

63%

Garus S. , Garus J. , Szota M. , Nabiałek M. , Gruszka K. , Błoch K.

Journal of Achievements in Materials and Manufacturing Engineering

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2013

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tom Vol. 61, nr 2

327--335

EN

Purpose: The subject of paper is the implementation of FDTD algorithm for study the electromagnetic wave propagation and to appoint the wavelength distribution of the electromagnetic waves leaving the structure for monochromatic incident wave in the case of a wavelength range of the band gap and in the case of full transmission. Design/methodology/approach: In the paper is implemented algorithm to study the monochromatic electromagnetic wave propagation in the system of quasi one-dimensional aperiodic, lossless and isotropic Severin superlattice using finite-difference time domain method (FDTD) in the C programming language. Findings: The FDTD simulation comparison of the results with those obtained using the matrix method demonstrate good correlation between the two methods. The use of the FDTD method and Fourier transforms (FFT) allows for a more complete picture of the observed phenomena, along with the distribution of time in which it takes place. Research limitations/implications: The structures analyzed in the paper material consisted of quasi one-dimensional lossless and non-dispersive isotropic material. An important would be analysis of the lossy materials with dispersion. Analysis of two-dimensional space would allow to study of propagation of the incident wave different angles. Practical implications: The simulation allows to understand the temporal distribution of the electromagnetic wave propagation in the superlattice structure for the full transmission rate, and in the case of the occurrence of photonic band gap. Originality/value: The novelty is to use FDTD algorithm with FFT to study the behavior of the electromagnetic wave in the electromagnetic wave wavelength of band gap range.

17

Aluminiowanie stali w proszku z samorzutnego rozpadu wysokoaluminiowego żeliwa

63%

Skrzypek S. , Pieniążek J. , Binczyk F. , Przybyłowicz K. , Ratuszek W.

Hutnik, Wiadomości Hutnicze

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2004

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tom Vol. 71, nr 7-8

425-428

PL

Badania procesu dyfuzyjnego aluminiowania różnych stopów żelaza (stal 45, 1H17, Cr20Al5 i Fe -armco) w stopowym proszku samorozpadowym uzyskanym z samorzutnego rozpadu wysokoaluminiowego żeliwa opisano w prezentowanej pracy. Celem badań było stwierdzenie możliwości zastoswania takiego proszku do celów dyfuzyjnego aluminiowania stali. Badania wykazały, że w odpowiednich warunkach powstaja warstwy wzbogacone w aluminium, tworzące nadstruktury FeAl i Fe3Al. Celem takiejobróbki cieplno - chemicznej jest połączenie własności mechanicznych i antykorozyjnych.

EN

An aluminizing process of different iron alloys (C 45 steel, 1H17 steel, Cr20Al15 (kanthal) and Fe -armco) with application of self - decomposition powder was carried out. The object of study were diffusion layers deposited on steels. Investigation shows that applied conditions of treatment were suitable to form layers enriched witch aluminium. The surface layers consist of FeAl and Fe3Al superlattice. The thermo - chemical process was applied to improve mechanical and corrosion properties.

18

Transmission in aperiodic Severin superlattices

63%

Szota M.

Inżynieria Materiałowa

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2014

|

tom Vol. 35, nr 2

211--214

EN

Multilayer structure, whose thickness of the layers is of the same order as the length of the electromagnetic wave incident, have characteristic properties of a transmission. A special feature of these materials is the presence in them of the photonic band gap – which means that the electromagnetic waves of given wavelengths do not propagate in them. Understanding the characteristics of the different types of superlattices allows you to design systems with application specific properties. The study analyzed aperiodic supergrid Severin built with materials lossless and non-dispersive. The study used a matrix method. Transmission were tested according to the number of generations of the superlattice, the type of material used (right-handed and left-handed), the thickness of the layers and type of surrounding material. Studies have demonstrated a link between increasing number of superlattice generation, and increase of the number of transmission bands and a decrease in their width. Has been shown that change the shape of transmission band in dependence on the type of material used. A change of environment caused a shift of the transmission bands towards lower angles and observe the phenomenon of electromagnetic wave tunneling through the structure.

PL

Struktury wielowarstwowe, których grubość warstw jest tego samego rzędu co długość elektromagnetycznej fali padającej, mają charakterystyczne własności transmisyjne. Cechą szczególną tych materiałów jest występowanie w nich fotonicznej przerwy wzbronionej – co oznacza, że fale elektromagnetyczne o danych długościach fali nie propagują w nich. Poznanie charakterystyk różnych typów supersieci pozwala na projektowanie układów o konkretnych własnościach aplikacyjnych. W pracy analizowano aperiodyczną supersieć Severina zbudowaną z materiałów bezstratnych i bezdyspersyjnych. Do badań wykorzystano metodę macierzową. Badano transmisję w zależności od numeru pokolenia supersieci, typu użytego materiału (prawoskrętnych i lewoskrętnych), od grubości warstw oraz materiału otoczenia struktury. Badania pozwoliły wykazać związek między zwiększeniem numeru pokolenia supersieci, a powiększeniem liczby pasm transmisji oraz zmniejszeniem ich szerokości. Wykazano zmianę kształtu pasm transmisji w zależności od typu użytego materiału. Zmiana materiału otoczenia spowodowała przesunięcie pasm transmisji w stronę mniejszych kątów oraz zaobserwowanie zjawiska tunelowania fali elektromagnetycznej przez strukturę.

19

Wpływ typu przekładki na transmisję złożenia dwóch struktur binarnych

63%

Szota M.

Inżynieria Materiałowa

|

2014

|

tom Vol. 35, nr 6

548--551

PL

W pracy przedstawiono metody symulacji transmisji układów wielowarstwowych oraz zbadano wpływ zmiany typu oraz grubości warstwy materiału rozdzielającego dwie struktury wielowarstwowe. Do analizy wykorzystano metodę macierzową. Wykazano znaczący wpływ niejednorodności wykonania warstwy rozdzielającej (przekładki) na transmisję oraz znacznie mniejszy wpływ niedokładności wykonania grubości warstwy.

EN

The paper presents a simulation method of multilayers transmission and examines the impact of changes in the type and thickness of the material separating the two multilayer structures. For the analysis, the matrix method were used. It has been shown significantly influence the implementation of the separation layer inhomogeneities on the transmission and significantly lower thickness inaccuracies implementation.

20

Zastosowanie metody elektrochemicznej do wytwarzania wielowarstw metalicznych.

51%

Tokarz A. , Wolkenberg A.

Inżynieria Materiałowa

|

2002

|

tom R. XXIII, nr 5

458-460

PL

W pracy przedstawiono możliwość wykorzystania elektrochemicznej metody otrzymywania supersieci metalicznych Cu/Ni i Cu/Co. Zastosowano elektrochemiczną metodę potencjostatyczną (stałoprądową) z jednego roztworu, zawierającego jony metali wchodzących w skład osadzanej supersieci. Na podstawie badań polaryzacyjnych określono zakresy potencjałów osadzania poszczególnych warstw supersieci. Na podstawie badań składu chemicznego pojedynczych warstw stwierdzono, iż możliwe jest otrzymanie praktycznie czystych warstw miedzi (-99,8 % at. Cu) i warstw stopu Co-Cu (bądź Ni-Cu) o zawartości Cu 25 % at. Powiązanie wyników badań składu chemicznego z wartościami prądu katodowego rejestrowanego w trakcie badań polaryzacyjnych pozwoliło na optymalny dobór potencjałów osadzania warstw miedzi i kobaltu (lub niklu).

EN

In this work an electrochemical method for obtaining metallic superlattices is presented. The potentiostatic electrochemical method from single electrolyte bath, based on nickel sulphamate or cobalt sulphate and cooper sulphate, has been applied for Cu/Ni and Cu/Co superlattices deposition. The experimental setup used for preparation of Cu/Ni and Cu/Co systems is presented. The ranges of the deposition potential where Cu and Ni or Co ions are reduced were established based on the polarisation data for Cu substrate. The chemical compositions of single layers have been checked. For both systems subject to investigation the Cu layers deposited at chosen potentials were almost pure (99,8 % at. Cu) while Ni (or Co) layers contained 25% at. Cu. The correlation between the cathodic current and the Cu concentration in the single layers deposited at different potentials have been investigated.