Wyniki wyszukiwania - Biblioteka Nauki

Nowa wersja platformy, zawierająca wyłącznie zasoby pełnotekstowe, jest już dostępna.
Przejdź na https://bibliotekanauki.pl

Ograniczanie wyników

2 Opto-Electronics Review

Znaleziono wyników: 2

Liczba wyników na stronie

Wyniki wyszukiwania

Wyszukiwano:
w słowach kluczowych: minority carrier lifetime

Sortuj według:

Ogranicz wyniki do:

Photodecay method in investigation of materials and photovoltaic structures

100%

Pisarkiewicz T.

Opto-Electronics Review

2004

tom Vol. 12, No. 1

33--40

Measurements of recombination parameters of both photoconductive materials and structures (solar cells) have been described. For materials, the methods are based on both steady-state photoconductivity (or quasi steady-state photoconductivity) and photocurrent decay PCD experiments. Examples of PCD measurements taken from literature for c-Si wafers and our own experiments for amorphous a-Si:H and a-SiC:H samples have been discussed. Investigation of solar cells based on the most popular photovoltage decay technique is widely described. Measurement and interpretation details have been discussed. Theoretical description and experimental evidence is, however, focused on combined photovoltage and photocurrent decays technique, developed in the authors’ laboratory. This technique enables us determination of both minority carrier lifetime and surface recombination velocity of photocarriers. The measurement setup enabling determination of both open circuit voltage and short circuit current decay times has been described.

SRH suppression mechanism in a non-equilibrium MWIR HgCdTe photodiode

100%

Kopytko M.

2023

tom Vol. 31, Special Issue

art. no. e144548

The operation of narrow-gap semiconductor devices under non-equilibrium mode is used at temperatures where the materials are normally intrinsic. The phenomenon of minority carrier exclusion and extraction was particularly discussed in the case of the suppression of Auger thermal generation in heterojunction photodiodes, especially important in the long-wave infrared range. This paper shows that the reduction of the dark current in the HgCdTe photodiode operating in the mid-wave infrared range is primarily the result of suppression of the Shockley-Read-Hall generation in the non-equilibrium absorber. Under a reverse bias, the majority carrier concentration is held equal to the majority carrier doping level. This effect also leads to a decreased majority carrier population at the trap level and an effective increase in the carrier lifetime. The analysed device was with the following design: p+-Bp cap-barrier unit, p-type absorber doped at the level of 8 ·10¹⁵ cm¯³, and wide-bandgap N+ bottom contact layer. At room temperature, the lowest dark current density of 3.12 ·10¯¹ A/cm² was consistent with the theoretically predicted Shockley-Read-Hall suppression mechanism, about two times smaller than for the equilibrium case.