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512x512 element GeSi/Si heterojunction infrared focal plane array

100%

Wada H. , Nagashima M. , Hayashi K. , Nakanishi J. , Kimata M. , Kumada N. , Ito S.

Opto-Electronics Review

1999

tom Vol. 7, No. 4

305-311

We have developed a monolithic 512x512 element GeSi/Si heterojunction infrared focal plane array (FPA). The operation mechanism of the GeSi/Si heterojunction detector is the same as that of the PtSi/Si Schottky- barrier detector. We have fabricated the GeSi/Si heterojunction using molecular beam epitaxy (MBE) technology, and have confirmed that ideal strained GeSi films are grown on Si substrates. We have evaluated the dependencies of spectral responsivity on the Ge composition, impurity concentration and GeSi thickness, and have optimized them for 8-12 um infrared detection. The 512x512 element FPA has a pixel size of 34 x 34 um2 and a fill factor of 59%. A low noise equivalent temperature difference of 0.08 K ( f/2.0 ) was obtained with a 300 K background with a very small responsivity dispersion of 2.2%.

Spectral detectivity and NETD of doping-spike PtSi/p-Si and GeSi/Si HIP detectors

88%

Voitsekhovskii A. P. , Kokhanenko A. P. , Nesmelov S. N.

Opto-Electronics Review

2003

tom Vol. 11, No. 2

161-167

Platinum silicide Schottky barrier detectors (SBD) and GeSi/Si - based heterojunction internal photoemission (HIP) detectors are widely used for application in the infrared spectral range. The increase in cutoff wavelength and responsivity of PtSi/Si photodevices is possible by formation of heavily-doped thin layer near to the semiconductor surface. The cutoff wavelength of GexSi1-x /Si - based HIP detectors depends on x and concentration of boron in GeSi. In this report, the threshold properties of these detectors are considered. The dependencies of spectral detectivities and NETD on cutoff wavelength are calculated for various parameters of SBD and HIP detectors. It is shown that optimal NETD of a SBD and HIP detectors is possible for certain cutoff wavelength and temperature of detectors and depends on storage capacity. Also opportunity of formation of heavily-doped nanolayer in SBD detectors used by short-pulse recoil implantation of boron was studied