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1 Opto-Electronics Review

1 1999

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Photoreflectance study of coupling effects in double quantum wells

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Sęk G. , Ryczko K. , Kubisa M. , Misiewicz J. , Koeth J. , Forchel A.

Opto-Electronics Review

1999

tom Vol. 7, No. 2

117-119

A double quantum well (DQW) molecular beam epitaxy (MBE) grown GaAs/AlxGa1-xAs structure was studied. To investigate the coupling effects in such a system 1 monolayer (ML) thick AlAs barrier was inserted at the centre of the GaAs/AlxGa1-xAs single well. Due to the strong coupling between wells each confined state splits into two : symmetric and antisymmetric ones. At room temperature photoreflectance (PR) spectrum features related to transitions between all these states were observed. Theoretical considerations based on the envelope function approximation were performed to obtain the energies of expected optical transitions. An excellent agreement between experiment and theory was obtained.