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Dark current behaviour of type-II superlattice longwave infrared photodetectors under proton irradiation

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Bataillon C. , Perez J.-P. , Alchaar R. , Michez A. , Gilard O. , Saint-Pé O. , Christol P.

Opto-Electronics Review

2023

tom Vol. 31, Special Issue

art. no. e144552

In this work, the authors investigated the influence of proton-irradiation on the dark current of XBp longwave infrared InAs/GaSb type-II superlattice barrier detectors, showing a cutoff wavelength from 11 μm to 13 μm at 80 K. The proton irradiations were performed with 63 MeV protons and fluences up to 8∙10¹¹ H+/cm² on a type-II superlattice detector kept at cryogenic (100 K) or room temperature (300 K). The irradiation temperature of the detector is a key parameter influencing the effects of proton irradiation. The dark current density increases due to displacement damage dose effects and this increase is more important when the detector is proton-irradiated at room temperature rather than at cryogenic temperature.

Performance analysis of an InAs/GaSb superlattice barrier photodetector covering the full LWIR spectral domain

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Alchaar R. , Rodriguez J.-B. , Höglund L. , Naureen S. , Costard E. , Christol P.

Opto-Electronics Review

2020

tom Vol. 28, No. 3

164--170

In this paper, we present the electrical and electro-optical characterizations of an InAs/GaSb type-2 superlattice barrier photodetector operating in the full longwave infrared spectral domain. The fabricated detectors exhibited a 50% cut-off wavelength around 14 μm at 80 K and a quantum efficiency slightly above 20%. The dark current density was of 4.6×10⁻² A/cm² at 80 K and a minority carrier lateral diffusion was evaluated through dark current measurements on different detector sizes. In addition, detector spectral response, its dark current-voltage characteristics and capacitance-voltage curve accompanied by electric field simulations were analyzed in order to determine the operating bias and the dark current regimes at different biases. Finally, dark current simulations were also performed to estimate a minority carrier lifetime by comparing experimental curves with simulated ones.