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1 Electron Technology

1 1999

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Deposition and properties of refractory metallic films for diffusion barrier applications in Au-based metallizations to III-V semiconductors

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Kamińska E. , Piotrowska A. , Guziewicz M. , Gołaszewska K. , Barcz A. , Turos A. , Mizera E. , Adamczewska J. , Rouvimov S. , Liliental-Weber Z. , Bremser M. D. , Davis R. F.

Electron Technology

1999

tom Vol. 32, No. 4

304-326

We present a comprehensive investigation of titanium, tungsten and zirconium nitrides and borides as diffusion barriers in Au-based ohmic contracts to III-V semiconuctors, including GaAs, InP, GaSb and GaN. Thin films of refractory metallic compounds were deposited using sputtering methods. The resistivity and mechanical properties of these films were optimized by adjusting the deposition parameters such as power, substrate bias and gas pressure. Characterization of barrier layers included determination of thier microstructure and chemical reactivity towards III-V semiconductors. Complete metallization, with Au(Zn) ohmic contact metallization and Au overlayer has ben used as a model in the study of the effectiveness of barrier layers.