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EN
The shape of the potential curve for some fcc and bcc crystals has been determined. Starting from the basic shape appropriate for the elastic properties for the temperature 0 K and using the unharmonic renormalization method prposed by Siklos and Plakida, we obtained potentials for temperatures up to the melting point. These potentials were used for subsequent slab calculations of the dynamical properties of the samples studied, performing equally well for bulk as for thin film or surface calculations.
EN
In the paper there is presented a process of preparation of tool to geometrical optimization of their total binding energy as well as some physical results. Initially the evolutionary algorithm (EA) was responsible for study of metal cluster described by three-body potential. Afterwards the algorithm was used to perform the exact investigations or rare gas clusters and their modifications by the alkali metal ion doping. The data presented here are the part pf PhD dissertation accepted by the Faculty of Physics of UŁ [1], where are detailed information can be found.
EN
The experimental setup and procedures used in measurements and analysis of channeling effect of charged and neutral hydrogen are presented. The influence of some characteristic experomental parameters (divergence of beam, a label of noises, precision and some other) on the spectra obtained is discussed.
5
Content available remote Channelling of H0 projectile
80%
EN
The characteristics of the channelling effect for the neutralised proton H0 in comparison with proton H+ are presented. The visible differences in the region of characteristic minima show that the process of the electron loss by H0 takes place at the depth not grater than two atomic layers.
PL
Przedstawiono charakterystyki efektu kanałowania w krzemie dla zneutralizowanego strumienia protonów H0 w porównaniu do strumienia protonów H+. Na podstawie widocznych różnic w rejonach charakterystycznych minimów kanałowania oceniono, że proces utraty elektronu przez H0 zachodzi w pierwszych dwu warstwach atomowych.
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