We report successful growth of ZnO thin films by atomic layer epitaxy in the gas flow version. Properties of ZnO epilayers produced by four different ALE-procedures are compared. We further demonstrate the use of these ZnO films as thin buffer layers on top of Si and GaAs substarte materials. It is shown that covering either GaAs or Si substartes with thin ZnO layers makes them useful in the GaN technology. Optical properties of GaN films grown on ZnO buffer layers are discussed. These GaN films show several encouraging properties.
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