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2 Opto-Electronics Review

2 1999

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Degradation processes in II−VI-compounds-based electron-beam-pumped lasers and creation of material with uniquely high optical strength

100%

Borkovskaya L. V. , Dzhumaev B. R. , Korsunskaya N. E. , Papusha V. P. , Pekar G. S. , Signaevsky A. F.

Opto-Electronics Review

1999

tom Vol. 7, No. 2

139-143

The processes of gradual degradation as well as the destruction processes of high power electron beam pumped lasers have been studied. The main reason of gradual degradation has been shown to be the increase in dislocation density due to thermoelastic stresses caused by both electron beam treatment and own laser radiation. The types of macrodefects that are responsible for laser screen destruction have been identified. CdS crystals obtained by the method developed by us were shown to have the highest optical strength.

Role of surface substances in excitation of porous silicon photoluminescence

84%

Khomenkova L. Y. , Baran N. P. , Dzhumaev B. R. , Korsunskaya N. E. , Torchinskaya T. V. , Goldstein Y. , Savir E. , Many A.

Opto-Electronics Review

1999

tom Vol. 7, No. 2

135-138

Photoluminescence (PL) and photoluminescence excitation (PLE) spectra studies as well as SIMS and FTIR methods were used for investigation of PL excitation mechanism of porous silicon (PS). It is shown that there are two types of PS PLE spectra, which consist of either two bands (visible and ultraviolet) or only ultraviolet one. The different dependencies of intensity of each PLE band upon anodization regimes as well as during aging and thermal treatment were observed. Two excitation channels have been shown to be present in PS. The visible PLE band at 300 K has been attributed to light absorption of some species on Si wire surface.