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1 Opto-Electronics Review

1 2023

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Two-step etch in n-on-p type-II superlattices for surface leakage reduction in mid-wave infrared megapixel detectors

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Ramos D. , Delmas M. , Ivanov R. , Žurauskaitė L. , Evans D. , Almqvist S. , Becanovic S. , Hellström P.-E. , Costard E. , Höglund L.

tom Vol. 31, Special Issue

art. no. e144556

This work investigates the potential of p-type InAs/GaSb superlattice for the fabrication of full mid-wave megapixel detectors with n-on-p polarity. A significantly higher surface leakage is observed in deep-etched n-on-p photodiodes compared to p-on-n diodes. Shallowetch and two-etch-step pixel geometry are demonstrated to mitigate the surface leakage on devices down to 10 μm with n-on-p polarity. A lateral diffusion length of 16 μm is extracted from the shallow etched pixels, which indicates that cross talk could be a major problem in small pitch arrays. Therefore, the two-etch-step process is used in the fabrication of 1280 × 1024 arrays with a 7.5 μm pitch, and a potential operating temperature up to 100 K is demonstrated.