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Determination of γ-aminobutyric acid in leaf, stem and root bark of mulberry by high-performance anion exchange chromatography-integrated pulsed amperometric detection

100%

Kwon H.-J. , Kim S. H. , Hwang J.-H. , Park Y. D.

Acta Chromatographica

2013

tom Vol. 25, no. 3

581--588

A simple high-performance anion-exchange chromatography-integrated pulsed amperometric detection method was developed to determine the gammaaminobutyric acid (GABA) content in mulberry. GABA was separated in anion-exchange column under isocratic condition of 20 mM sodium hydroxide solution and detected at integrated pulsed amperometric detection at pico-gram levels. The contents of GABA in the leaf, stem, and root bark of mulberry were calculated without any derivatization or sample purification process using this method. This method showed good linearity, precision, and accuracy for GABA analysis.

Recent advances in gate dielectrics and polarised light emission from GaN

51%

Pearton S. J. , Abernathy C. R. , Gila B. P. , Onstine A. H. , Overberg M. E. , Thaler G. T. , Jihyun K. , Luo B. , Mehandru R. , Ren F. , Park Y. D.

Opto-Electronics Review

2002

tom Vol. 10, No. 4

231-236

Inversion behaviour has been demonstrated in gate-controlled p-GaN diodes using both MgO and Sc₂O₃ gate dielectrics and implanted n⁺ regions to provide a source of inversion charge. The total surface state density was estimated from capacitance-voltage or charge pumping measurements to be in the range 3 - 8 x 10¹² cm² after the implant activation annealing to form the source and drain regions. In addition, Mn doping of GaN during growth by molecular beam epitaxy is found to produce room temperature ferromagnetism under conditions where the material remains single-phase. The layers can be used as injectors of spin-polarised carriers into light-emitting diode structures, with the potential for creating polarised optical output.