Wyniki wyszukiwania - Biblioteka Nauki

1

Modelling of laser pumped intracavity frequency doubled laser.

100%

Jabczyński J. K.

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2000

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tom Vol. 30, nr 1

161-171

EN

A model of an intracavity frequency doubled laser pumped by a laser beam was elaborated. The effects connected with mode matching, thermal lensing, pump induced diffraction losses, as well as parameters of frequency conversion and geometry of cavity were considered. An analytical model of the cavity with an internal lens and thermal lensing was derived to optimize output characteristics. Two types of cavity (with and without internal lens) were analyzed and the best configurations with respect to second harmonic output power were found for both cases. The pump induced diffraction losses were found to limit the output power of the frequency doubled laser for high pump levels.

2

Rozwój techniki laserowej w Polsce : 2016

63%

Jabczyński J. K. , Romaniuk R. S.

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2016

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tom Vol. 57, nr 11

3--12

PL

Artykuł jest przeglądem prac zaprezentowanych w czasie XI Sympozjum Techniki Laserowej STL 2016 [1]. Sympozjum Techniki Laserowej jest cykliczną konferencją naukową organizowaną, co trzy lata od 1984 r. [2–8]. STL 2016, zorganizowane w tym roku przez Instytut Optoelektroniki Wojskowej Akademii technicznej [9] we współpracy z Politechniką Warszawską [10], Uniwersytetem Warszawskim [11] i Politechniką Wrocławską [12], odbyło się w Jastarni w dniach 27–30 września. Sympozjum stanowi reprezentatywny przegląd prac prowadzonych w obszarze techniki laserowej w Polsce. Prace Sympozjum STL są tradycyjnie publikowane w serii wydawniczej Proceedings SPIE od roku 1987 [13–21]. Spotkanie naukowo-techniczne zgromadziło ok. 150 uczestników którzy zaprezentowali ponad 120 artykułów badawczych i naukowo-technicznych. Sympozjum Techniki Laserowej jest miarodajnym obrazem rozwoju techniki laserowej i jej zastosowań w Polsce w laboratoriach uniwersyteckich, instytutach resortowych i rządowych, laboratoriach badawczych firm innowacyjnych, itp. Na konferencji STL prezentowane są także bieżące projekty techniczne, realizowane przez krajowe zespoły naukowe, badawcze-wdrożeniowe i przemysłowe. Zakres tematyczny Sympozjum jest tradycyjnie podzielony na dwa duże obszary – postępy techniki laserowej oraz zastosowania techniki laserowej. Nurty tematyczne Sympozjum obejmują: źródła laserowe dla bliskiej i średniej podczerwieni, lasery pikosekundowe i femtosekundowe, lasery i wzmacniacze światłowodowe, lasery półprzewodnikowe, lasery dużej mocy i ich zastosowania, nowe materiały i komponenty dla techniki laserowej, zastosowania techniki laserowej w inżynierii biomedycznej, przemyśle, inżynierii materiałowej, nano- i mikrotechnologiach, oraz metrologii.

EN

The paper is a concise digest of works presented during the XIth Symposium on Laser Technology (SLT 2016) [1]. The Symposium is organized since 1984 every three years [2–8]. SLT 2016 was organized by the Institute of Optoelectronics, Military University of Technology (IOE WAT) [9], Warsaw, in cooperation with Warsaw University of Technology (WUT) [10], Warsaw University [11], and Wrocław University of Technology [12] in Jastarnia on 27-30 September 2016. Symposium is a representative portrait of the laser technology research in Poland. Symposium Proceedings are traditionally published by SPIE [13–21]. The meeting has gathered around 150 participants who presented around 120 research and technical papers. The Symposium, organized every 3 years, is a reliable image of laser technology and laser applications development in Poland at university laboratories, governmental institutes, company R&D laboratories, etc. The SLT also presents the current technical projects under realization by the national research, development and industrial teams. The works of the Symposium, traditionally are divided in two large areas – sources and applications. The main topics of SLT were: laser sources in near and medium infrared, picosecond and femtosecond lasers, optical fiber lasers and amplifiers, semiconductor lasers, high power and high energy lasers and their applications, new materials and components for laser technology, applications of laser technology in mea surements, metrology and science, military applications of laser technology, laser applications in environment protection and remote detection of trace substances, laser applications in medicine and biomedical engineering, laser applications in industry, technologies and material engineering.

3

CW mode locked Nd:YVO₄ laser pumped by 20-W laser diode bar

51%

Jabczyński J. K. , Żendzian W. , Kwiatkowski J.

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tom Vol. 14, No. 2

135-139

EN

The efficient cw mode locking (cw-ML) regime was demonstrated in Nd:YVO₄ laser by means of saturable absorber mirror (SAM). The 0.3-at.% Nd³⁺ doped 10-mm-long YVO₄ crystal end pumped by 20-W diode module with a beam shaper was applied as a gain medium located in the close vicinity to the rear flat mirror of the first arm of Z-type resonator of 316 cm total length with two curved mirrors of 100-cm curvature radii. The SAM of 2%-saturable absorptance and saturation fluence of 50 μJ/cm² was mounted at the opposite end of a resonator. The developed “dynamically stable” cavity design mitigates detrimental role of thermal aberration in gain medium, enforcing clean perfect mode locking even for the highest pump densities. The cw-ML pulses with 47.5 MHz repetition rate and pulse durations in the range of 15–20 ps were observed for a wide range of pump powers and output coupler losses. In the best case, for 32% of output coupler transmission, up to 6.2 W of average power with near 35% slope efficiency was achieved. The thresholds for Q-switched ML, cw-ML regimes were 2.67 W and 6.13 W of pump power, respectively. For the maximum pump power of 20 W we obtained 133 nJ of pulse energy with 16-ps pulse duration, resulting in a peak power higher than 8 kW. The threshold energy density at SAM giving the QML regime was estimated to be about 30 μJ/cm2, threshold of cw-ML regime was 220 μJ/cm².

4

Growth and optical properties of Nd:YVO₄ laser crystals

32%

Kaczmarek S. M. , Łukasiewicz T. , Giersz W. , Jabłoński R. , Jabczyński J. K. , Świrkowicz M. , Gałązka Z. , Drozdowski W. , Kwaśny M.

Opto-Electronics Review

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1999

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tom Vol. 7, No. 2

149-152

EN

Growth conditions for Nd:YVO₄ crystals and some optical properties are presented. The obtained Nd:YVO₄ crystal shows lower content of point defects and consequently, lower susceptibility to ionising radiation. ESR measurements show the presence of V ions in intersitial sites with another than 5t valency. Obtained by Czochralski method crystals reveal very good optical properties, some of which are better than for Nd:YAG.