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Quantitative study of solar cells based on Cu-In-S based absorber layers grown by the CISCuT - process

Degrave S., Burgelman M., Nollet P.

Opto-Electronics Review

2000

Vol. 8, No. 4

295-298

CISCut [CuInS2(CIS) on Cu tape ] is a new fabrication technology for chalcogenide absorber layers for solar cells. In a roll-to-roll process, indium is electrochemically deposided on a copper tape, and subsequently sulphurised. It has been shown that various Cu-In-S phases are formed, depending on fabrication parameters. After completion with a Cu(O,S) window layer, the structure behaves as a photovoiltaic p-n junction, the copper substrate being the n-side and the Cu(O,S) layer being the p-side. In this paper, evidence is given that the electronic p-n junctions is located inside the CIS layer, and not at the Cu(O,S) interface. Solar cells were prepared with a small area dot contact of Cu(O,S) of varying size and their I-V curves were analysed. Uniformly illuminated cells show too large a light current, and a low fill factor, due to pronunced shunt. The measured phenomena were explained quantitatively by phenomenological model, which asssumes that there is an internal p-n junction inside the absorber layer, and that this p-layer near the surface has a non-negligible lateral conductance. Fitting of measured and simulated I-V curves, as a function of the dot size, allowed estimating the sheet resistance of the p-type layer.

Kadmowo-tellurowe ogniwa słoneczne

Sibiński M., Burgelman M., Lisik Z.

Elektronika : prace naukowe

2000

nr 5

164-176

Polikrystaliczne heterozłączowe ogniwa słoneczne na bazie tellurku kadmu należą do jednych z bardziej obiecujących rozwiązań na drodze poszukiwań ekologicznych odnawialnych źródeł energii. W pracy przedstawiono zasady ich działania i wytwarzania jako cienkowarstwowych przyrządów półprzewodnikowych. Omówiono badania, których celem było sprawdzenie przydatności procesu ICSVT do formowania bazy CdTe tych ogniw. Potwierdziły one celowość stosowania tego procesu

Polycrystalline heterojunction cadmium telluride solar cells belong to the ones of most promising solutions as concerns the new renewable ecological sources of energy. In the paper, the principles of both their work and their manufacturing as thin layer semiconductor devices are presented. The investigations aimed to check the usefulness of the new ICSVT process to create the CdTe base layer of the solar cells are reported as well.