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1
Krystalizacja i właściwości warstw GaN osadzanych na podłożach Si(111) techniką epitaksji z wiązek molekularnych z plazmowym źródłem azotu
Żytkiewicz Z. R., Sobańska M., Łusakowska E., Kłosek K., Borysiuk J., Wierzbicka A., Reszka A.
Elektronika : konstrukcje, technologie, zastosowania
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2011
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Vol. 52, nr 9
27-30
PL
W pracy przedstawiono szczegóły procesu wzrostu warstw GaN na podłożach Si(111) przy wykorzystaniu techniki epitaksji z wiązek molekularnych z plazmowym źródłem azotu. Omówiono również wpływ warunków wzrostu na właściwości otrzymywanych warstw.
EN
In this work details of procedure of GaN growth on Si(111) substrates by molecular beam epitaxy with the use of RF plasma nitrogen source are presented Influence of growth conditions on properties of the layers is discussed.
2
Content available remote Ferromagnetic and structural properties of Ge1-xMnxTe epitaxial layers
Knoff W, Dziawa P, Osinniy V, Taliashvili B, Domuchowski W, Diduszko R, Domagała J, Łusakowska E, Jakieła R, Story T
Materials Science Poland
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2008
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Vol. 26, No. 4
295--300
EN
Magnetic properties of thin layers of p-Ge1–xMnxTe (x < 0.2) semimagnetic (diluted magnetic) semiconductor exhibiting carrier induced ferromagnetism were experimentally studied. The layers were grown on BaF2 (111) substrates by molecular beam epitaxy technique. X-ray diffraction analysis performed at room temperature revealed monocrystalline (111)-oriented rhombohedral (exhibiting ferroelectric properties) crystal structure of Ge1–xMnxTe layers in the entire range of Mn content studied. The examination of the magnetic properties of the layers carried out by superconducting SQUID magnetometry and ferromagnetic resonance technique showed the ferromagnetic transition with the Curie temperature in the range 10–100 K depending on the Mn content and the hole concentration. Contrary to polycrystalline GeMnTe layers, it was experimentally found that in monocrystalline layers of GeMnTe an easy magnetization axis is directed along a normal to the layer plane. This effect is discussed in terms of strain present in these layers due to thermal expansion coefficients mismatch between the substrate and the GeMnTe layer.
3
Content available remote Anisotropic strain relaxation and surface morphology related to asymmetry in the formation of misfit dislocations in InGaAs/GaAs heterostructures
Gelczuk Ł., Dąbrowska-Szata M., Serafińczuk J., Masalska A., Łusakowska E., Dłużewski P.
Materials Science Poland
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2008
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Vol. 26, No. 1
157--166
EN
Partially relaxed InGaAs/GaAs heterostructures with a small lattice mismatch (less than 1%), grown by metalorganic vapour-phase epitaxy have been studied by the transmission electron microscopy, atomic force microscopy as well as X-ray diffractometry. A regular network of 60st.?misfit dislocations formed at the (001) interface in two orthogonal <110>?crystallographic directions has been revealed. A close correspondence between distribution of the interfacial misfit dislocations and undulating surface morphology in the form of a characteristic cross-hatch pattern has been observed. The structural analysis applied for the samples oriented either in [110] or [110] perpendicular directions, using reciprocal lattice mapping, revealed anisotropic strain relaxation, related to the asymmetry in the formation of alfa ?and beta ?misfit dislocations along these both directions, respectively.
4
Content available remote Ferromagnetic transition in Ge1-xMnxTe semiconductor layers
Knoff W., Dziawa P., Osinniy V., Taliashvili B., Domuchowski V., Łusakowska E., Świątek K., Story T.
Materials Science Poland
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2007
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Vol. 25, No. 2
293--300
EN
Magnetic properties of thin layers of p-Ge1-xMnxTe (x < 0.2) semimagnetic (diluted magnetic) semiconductor exhibiting carrier induced ferromagnetism were experimentally studied. The layers were grown on BaF2 (111) substrates by molecular beam epitaxy technique. X-ray diffraction analysis performed at room temperature revealed monocrystalline (111)-oriented rhombohedral (exhibiting ferroelectric properties) crystal structure of Ge1-xMnxTe layers in the entire range of Mn content studied. The examination of the magnetic properties of the layers carried out by superconducting SQUID magnetometry and ferromagnetic resonance technique showed the ferromagnetic transition with the Curie temperature in the range 10-100 K depending on the Mn content and the hole concentration. Contrary to polycrystalline GeMnTe layers, it was experimentally found that in monocrystalline layers of GeMnTe an easy magnetization axis is directed along a normal to the layer plane. This effect is discussed in terms of strain present in these layers due to thermal expansion coefficients mismatch between the substrate and the GeMnTe layer.
5
Content available remote Magnetic properties of (Eu,Gd)Te semiconductor layers
Dziawa P., Osinniy V., Dobrowolski W., Dybko K., Łusakowska E., Taliashvili B., Story T., Smits C.J.P., Swagten H.J.M.
Materials Science Poland
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2006
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Vol. 24, No. 3
777--781
EN
In (Eu,Gd)Te semiconductor alloys a well known antiferromagnetic semiconductor compound EuTe is transformed into n-type ferromagnetic alloy. This effect is driven by the RKKY interaction via conducting electrons created due to substitution of Gd3+ for Eu2+ ions. It is expected that due to the high degree of electron spin polarization (Eu,Gd)Te can be exploited in new semiconductor spintronic heterostructures as a model injector of spin-polarized carriers. The (Eu,Gd)Te monocrystalline layers with Gd content up to 5 at. % were grown by MBE on BaF2 (111) substrates with either PbTe or EuTe buffer layers. The measurements of magnetic susceptibility and magnetization revealed that the ferromagnetic transition with the Curie temperature TC=11- 15 K is observed in (Eu,Gd)Te layers with n-type metallic conductivity. An analysis of the magnetization of (Eu,Gd)Te was carried out in a broad range of magnetic fields applied along various crystal directions both in- and out-of layer plane. It revealed, in particular, that a rapid low field ferromagnetic response of (Eu,Gd)Te layer is followed by a paramagnetic-like further increase towards the full saturatio
6
Content available remote Thin films of ZnO and ZnMnO by atomic layer epitaxy
Wójcik A., Kopalko K., Godlewski M., Łusakowska E., Guziewicz E., Minikayev R., Paszkowicz W., Świderski J., Klepka M., Jakieła R., Kiecana M., Sawicki M., Dybko K., Phillips M. R.
Optica Applicata
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2005
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Vol. 35, nr 3
413-4217
EN
We discuss properties of thin films of ZnO and ZnMnO grown with atomic layer epitaxy using new, organic zinc and manganese precursors. Several characterization techniques, including X-ray diffraction, atomic force microscopy, scanning electron microscopy, cathodoluminescence, superconducting quantum interfernece device (SQUID) and electron spin resonance, show good topography of the films and their advantageous optical and magnetic properties.
7
Opracowanie technologii płytek podłożowych do homoepitaksji wiązką molekularną szerokoprzerwowych półprzewodników AII--BVI oraz budowa uproszczonego stanowiska do tego procesu
Mycielski A., Szadkowski A., Kaliszek W., Witkowska B., Kowalczyk L., Łusakowska E., Domagała J., Bąk-Misiuk J., Jędrzejczak A., Zieliński M., Adamczewska J., Adamiec K., Rutkowski J., Dobrowolski W., Gładki A.
Elektronika : konstrukcje, technologie, zastosowania
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2000
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Vol. 41, nr 2
3-8
PL
Opisano wytwarzanie gotowych do epitaksji podłoży z szerokoprzerwowych związków pólprzewodnikowych AII--BVI, to znaczy - uzyskiwanie super czystych pierwiastków, syntezę materiału źródłowego do krystalizacji, krystalizacja metodą transportu w fazie gazowej, wycinanie zorientowanych rentgenowsko płytek podłożowych i ich obróbka mechaniczna oraz metody przygotowania powierzchni "epi-ready", jak również budowa uproszczonej wersji stanowiska MBE do pokrywania płytek podłożowych warstwą homoepitaksjalnń. Przedstawiono wyniki charakteryzacji kryształów i płytek podłożowych.
EN
The technology of the "epi-ready" substrate plates (for MBE) of the wide-gap AII-BVI semiconductor compounds, i.e. - preparation of the ultra pure elements, synthesis of the source material, crystallization by the physical vapour transport technique, cutting of the oriented plates, mechano-chemical polishing and preparation of the "epi-ready" surface - is described, as well as the construction of a simplified version of the MBE setup for covering the substrate plates with the homoepitaxial layer. The results of the characterization of the substrate crystals and plates are presented.
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