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1
Content available Związki prawa z techniką i sztuką budowlaną (na tle polskiego prawa budowlanego i zabudowania osiedli z 1928 roku)
Bratkowski A.
Przegląd Budowlany
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2013
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R. 84, nr 6
18--22
2
Content available remote Novel gas sensor based on porous silicon measured by photovoltage, photoluminescence, and admittance spectroscopy
Bratkowski A., Korcala A., Łukasiak Z., Borowski P., Bała W.
Opto-Electronics Review
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2005
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Vol. 13, No. 1
35--38
EN
Porous silicon (PSi) layer as gas sensor, based on the change in photoconductivity, photoluminescence and admittance has been presented. PSi layer was prepared by electrochemical dissolution of p-type silicon wafer in HF. Photovoltage curves, photoluminescence spectra (PL) and admittance spectra have been measured in different gas concentrations. Photoconductivity (PC) spectra in vacuum and different gas atmosphere have been compared. Changes of photovoltage intensity curves and change of PC spectra versus concentration of vapour have been observed.
3
Content available remote Photoluminescence, optical transmission and reflection of Alq₃ layers obtained by thermal evaporation deposition
Dalasiński P., Łukasiak Z., Rębarz M., Wojdyła M., Bratkowski A., Bała W.
Opto-Electronics Review
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2004
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Vol. 12, No. 4
429-434
EN
In this paper we present the photoluminescence emission spectra (PL), photoluminescence excitation spectra (PLE), transmission (TS) and reflection (RS) spectra of tris(8-hydroxyquinoline) aluminum(III) (Alq₃) layers grown by thermal evaporation deposition method. All investigated samples exhibit strong luminescence in the wide temperature range from 13 K to room temperature and for different energies of excitation. In our experiments, we have focused on temperature dependence of photoluminescence. The thermal quenching of PL in the measured samples has been found. We have observed also distinct oscillations from reflection and transmission measurements. The energies of thermal activation estimated by means of configuration coordinate diagram and also the layer thickness and refractive index are presented.
4
Content available remote Photoluminescence characterization of vacuum deposited PTCDA thin films
Bała W., Łukasiak Z., Rębarz M., Dalasiński P., Bratkowski A., Bauman D., Hertmanowski R.
Opto-Electronics Review
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2004
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Vol. 12, No. 4
445-448
EN
We investigated photoluminescence (PL) under steady state excitation and photoluminescence excitation (PLE) spectra of thin 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) films deposited on (001)Si substrate with various layer thicknesses grown at different substrate temperatures. The PL and PLE spectra have been measured at various temperatures, ranging from 10 K to 325 K. The PTCDA films exhibit strong luminescence at all mentioned ranges of temperature and for different values of excitation energy. The vibronic structure of PL spectra is clearly resolved at different temperatures. The position of peaks on energy scale depends on the temperature. We have observed a blue-shift of peaks with the decrease in the temperature. In all the investigated samples, the thermal quenching of PL has been observed. Analysis of the temperature dependence of the intensity bands, their position and full width half maximum (FWHM) allowed to find the energy barriers between the excited state and defect state. We propose a schematic potential energy diagram which explains mechanism of PL recombination
5
Badanie transportu nośników w niedomieszkowanym krzemie porowatym metodą niestacjonarnego fotoprzewodnictwa
Bratkowski A., Łukasiak Z., Korcala A., Borowski P., Bała W.
Elektronika : konstrukcje, technologie, zastosowania
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2004
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Vol. 45, nr 10
15-16
PL
Warstwy krzemu porowatego otrzymano metodą elektochemicznej anodyzacji krzemu typu p. Wykonano pomiary krzemu typu p. Wykonano pomiary przebiegów czasowych fotonapięcia dla różnych długości fal światła wzbudzającego w różnych temperaturach. Pomiary pozwoliły wyznaczyć ruchliwość nośników prądu oraz określić energię głębokich poziomów w strukturze krzemu porowatego.
EN
Porous silicon layers were produced by electrochemical anodisation method. Photocurrent curves at different wavelength of excitation, temperatures and polarization voltages have been measured. Mobility of carriers and deep level energies were determined from photovoltage curves.
6
Miejsce projektowania w procesie inwestycyjnym
Bratkowski A.
Wiadomości / Izba Projektowania Budowlanego
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1999
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nr 7
1--3
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