Wyniki wyszukiwania - BazTech

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Analiza atrakcyjności sektora zajmującego się produkcją butelek PET

Poloczek P., Rak A., Żywiołek J.

Archiwum Wiedzy Inżynierskiej

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2017

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T. 2, Nr 1

45--47

PL

W pracy przedstawiono wyniki badań zrealizowanych w przedsiębiorstwie produkującym butelki PET. Wykonano analizę atrakcyjnego sektora, w którym funkcjonujące przedsiębiorstwo. Do badań wykorzystano narzędzie – analiza pięciu sił Portera. Na podstawie przeprowadzonych badań określono obszary atrakcyjności oraz obszary, które należy wzmocnić.

EN

The paper presents the results of research carried out in a company producing PET bottles. An analysis of the attractive sector in which the company operates was carried out. The tool was used to analyze the five Porter forces. Based on the survey, the areas of attractiveness and the areas to be strengthened were identified.

2

Trudności przy głębieniu szybu VI KWK „Budryk” na odcinku uskoku chudeckiego

Skrzydło A., Oślizło K., Poloczek P.

Bezpieczeństwo Pracy i Ochrona Środowiska w Górnictwie

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2016

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nr 11

30--33

PL

Artykuł omawia rozwiązania techniczne zastosowane w czasie pogłębiania szybu VI w KWK „Budryk” – najgłębszego szybu w Polsce – w czasie przechodzenia osłabionego górotworu w strefie uskoku chudeckiego.

EN

Shaft VI – currently the deepest shaft in Poland – was sunk in JSW S.A. “Budryk” hard coal mine in Ornontowice. Shaft sinking was performed in two stages: in 1979–1985 to the depth of 1034.3 m and then in 2011–2015 to the target depth of 1320.0 m. During the deepening process, the contractor had to face technical problems – construction of shaft lining in the fault zone. At the depth of approx. 1175.5 – 1230.0 m, the shaft crossed the Chudecki fault zone, in which heavily cracked and crumbled rocks were encountered. In this zone, the shaft lining was designed and constructed as a compound (two-layer) lining made using reinforced concrete with the thickness of 0.70 m (inner layer) and using pre-fabricated elements – panels (outer layer) with a concrete outer shell with the minimum thickness of 10 cm – a compensation layer between the rock mass and the panels. The outer later, protecting the sidewall of the shaft working was constructed with reinforced concrete panels with the height of 60 cm, minimum thickness of 50 cm and outer length of 210 cm.

3

Technology and characterisation of GaAsN/GaAs heterostructures for photodetector applications

Ściana B., Zborowska-Lindert I., Pucicki D., Boratyński B., Radziewicz D., Tłaczała M., Serafińczuk J., Poloczek P., Sęk G., Misiewicz J.

Opto-Electronics Review

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2008

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Vol. 16, No. 1

1-7

EN

The nitrogen-containing AIIIBV semiconductor alloys, so-called diluted nitrides (AIIIBV-N, have been extensively studied recently. Unusual properties of these materials make them very promising for applications in lasers and very efficient multijunction solar cells. This work presents the technology and properties of undoped GaAs1-xNxGaAs heterostructures used as active regions in the construction of metal-semiconductor-metal (MSM) photodetectors. The atmospheric pressure metal organic vapour phase epitaxy (APMOVPE) was applied for growing MSM test structures. Their structural and optical properties were examined using high resolution X-ray diffraction (HRXRD), photoluminescence (PL), and photoreflectance spectroscopy (PR). Chemical wet etching was applied for forming an active region and a multifinger Schottky metallization was used as MSM contacts. Dark and illuminated current-voltage characteristics were measured. Based on the obtained results, the main detector parameters as responsivity and spectral response were estimated.

4

Technology and properties of GaAs doping superlattices

Ściana B., Radziewicz D., Pucicki D., Tłaczała M., Sęk G., Poloczek P., Misiewicz J., Kováč J., Srnanek R., Christofi A.

Materials Science Poland

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2008

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Vol. 26, No. 1

71--78

EN

Heterojunction and doping superlattices are widely used in many advanced semiconductor devices such as resonant tunnelling diodes, optical modulators, cascade lasers, tunable light emitting diodes and photodetectors. These structures exhibit nonlinear electrooptical properties. Nonlinear processes are governed by the Franz-Keldysh effect and the band-filling effect in the n-i-p-i superlattices and by the quantum-confined Stark effect in the case of n-i-p-i multiple quantum well structures. The paper presents investigations of GaAs n-i-p-i and p-i-p-i doping superlattices grown by atmospheric pressure metal organic vapour phase epitaxy. The properties of the obtained structures were examined using: EC-V method, SIMS spectrometry, photoluminescence and photoreflectance spectroscopy.

5

A(III)B(V) detectors with graded active region

Wośko M., Paszkiewicz B., Szyszka A., Macherzyński W., Radziewicz D., Ściana B., Paszkiewicz R., Tłaczała M., Sęk G., Poloczek P., Motyka M., Misiewicz J.

Materials Science Poland

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2008

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Vol. 26, No. 1

87--94

EN

Results of modelling and fabrication of photodetectors with composition graded active layers have been presented. Simulated and measured spectral characteristics of the proposed detectors have been shown. Advantages of such structures have been discussed with respect to conventional detectors with non-graded active areas as well as some technological problems of compositionally graded semiconductor layers.