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Reverse-bias DLTS for investigation of the interface region in thin film solar cells

Igalson M., Zabierowski P., Romeo A., Stolt L.

Opto-Electronics Review

2000

Vol. 8, No. 4

346-349

The interface states in TCO/Cds/CdTe and ZnO/CdS/Cu(In,Ga)Se₂ photovoltaic devices has been studied by use of reverse-bias transient capacitance spectroscopy. Laplace transform analysis has been used in order to enhance a spectral resolution of the technique. It is shown that the method yields useful information on the electronic characteristics of the heterointerface in the thin film solar cells. The conclusion include a degree of inversion of the heterointerface and a contribution of tunneling in the carrier transport. The influence of these factors on photovoltaic performance of the devices under study is discussed.