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Low-cost 320 x 240 uncooled IRFPA using conventional silicon IC process

Ishikawa T., Ueno M., Endo K., Nakaki Y., Hata H., Sone T., Kimata M.

Opto-Electronics Review

1999

Vol. 7, No. 4

297-303

A 320 x 240 uncooled infrared focal plane array (IRFPA) with series PN junction diodes fabricated on a silicon-on-insulator (SOI) wafer has been developed. Resistive bolometers, pyroelectric detectors and thermopile detectors have been reported for large scale uncooled IRFPAs, while the detector developed uses the temperature dependence of forward-biased voltage of the diode. The diode has low 1/f noise because it is fabricated on the monocrystalline SOI film which has few defects. The diode is supported by buried silicon dioxide (BOX) film of the SOI wafer, which becomes a part of a thermal isolated structure by using bulk silicon micromachining technique. The detector constains an absorbing membrane with a high fill factor of 90% to achieve high IR absorption, and the readout circuit of the FPA constains a gate modulation integrator to suppress the noise. Low cost IRFPA can be supplied because the whole structure of the FPA is fabricated on commercial SOI wafers using a conventional silicon IC process.

512x512 element GeSi/Si heterojunction infrared focal plane array

Wada H., Nagashima M., Hayashi K., Nakanishi J., Kimata M., Kumada N., Ito S.

Opto-Electronics Review

1999

Vol. 7, No. 4

305-311

We have developed a monolithic 512x512 element GeSi/Si heterojunction infrared focal plane array (FPA). The operation mechanism of the GeSi/Si heterojunction detector is the same as that of the PtSi/Si Schottky- barrier detector. We have fabricated the GeSi/Si heterojunction using molecular beam epitaxy (MBE) technology, and have confirmed that ideal strained GeSi films are grown on Si substrates. We have evaluated the dependencies of spectral responsivity on the Ge composition, impurity concentration and GeSi thickness, and have optimized them for 8-12 um infrared detection. The 512x512 element FPA has a pixel size of 34 x 34 um2 and a fill factor of 59%. A low noise equivalent temperature difference of 0.08 K ( f/2.0 ) was obtained with a 300 K background with a very small responsivity dispersion of 2.2%.

PtSi Schottky-barrier infrared focal plane arrays

Kimata M., Ueno M., Yagi H., Shiraishi T., Kawai M., Endo K., Kosasayama Y., Sone T., Ozeki T., Tsubouchi N.

Opto-Electronics Review

1998

Vol. 6, No. 1

1-10

The focal plane array (FPA) technology based on the PtSi Schottky-barrier (SB) photoemissive detector is presented. Taking advantage of Si-compatible manufacturing processes and high responsivity uniformity, we have developed a series of 2-dimensional PtSi SB FPAs with array sizes from 256 x 256 to 1040 x 1040 elements for medium wavelength thermal imaging, and two spaceborne long linear FPAs with 4096-element x 4-band and 2100-element x 6-band for short wavelength remote sensing applications. Along with design and performance of the FPAs, this paper reports on the Charge Sweep Device readout architecture, which is a key technology for high performance 2-D FPAs. A high reliability and high planarity packaging technology for large FPAs is also described.