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Nonlinear dependence of optical gap of a-Si₁-xGex:H films on Ge content (x<0.4)

Dimova-Malinovska D.

Opto-Electronics Review

2000

Vol. 8, No. 4

382-384

The dependence of optical band gap of a-Si₁-xGex:H films on Ge content is discussed. The films are deposited by magnetron co-sputtering of c-Si target with c-Ge chips on it in Ar + H₂ atmosphere. It has been observed that concentration of the bondeh hydrogen decreases with Ge content in the films. The results of study show that variation of the optical band gap of a-Si₁-xGex:H films on Ge concentration follows the nonlinear law. This is related to the nonlinear changes of H concentration in the films.

Application of stain etched porous silicon in c-Si solar cells

Dimova-Malinovska D.

Opto-Electronics Review

2000

Vol. 8, No. 4

353-355

In this work application of porous silicon (PS) to c-Si solar cells is presented. The PS layer is formed between the fingers of the Al grid contact by the method of stain etching. The short circuit current, Isc, of the solar cells with PS between the grid contacts increases of 30-40% comparing with the solar cell without PS. The open circuit voltage decreases a little probably due to decreasing doping concentration of P in n+ - diffused layer, after stain etching, when 80 nm of it is converted to PS. The value of a fill factor does not change significantly. The spectral dependence of Isc demonstrates that it increases in the whole spectral region. This could be related to a decrease in reflectivity and partially to an increase in transparency of the emitter after PS formation.Tthe efficiency of solar cells increases of about 25-30%.