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Computer simulation of tuned and detuned GaInNAsSb QW VCSELs for long-wavelength applications

Gutowski K., Sarzała R.. P.

Materials Science Poland

2008

Vol. 26, No. 1

459--467

Ga0.62In0.38N0.023As0.95Sb0.027/GaN0.025As0.975 quantum wells (QWs) used in standard GaAs-based GaInNAsSb/GaNAs vertical-cavity surface-emitting diode lasers (VCSELs) exhibit at room temperature (RT) the highest optical gain for the 1422 nm wavelength. Its RT continuous-wave threshold current for the 5 m device is as low as only 0.68 mA. An increase in the QW active region temperature by about 100 K has been found to be followed by a shift of the gain spectrum of the above QW to the 1500 nm range. Therefore, a comprehensive computer simulation has been used to verify a possibility to highly detune GaAs-based GaInNAsSb/GaNAs VCSELs from the wavelength of 1422 nm to 1500 nm, closer to the wavelength used in the third generation of the fibre optical communication. Such a temperatureenhanced RT CW lasing operation of the 1500 nm VCSEL, with an active region identical to that of the 1422 nm one and the cavity properly re-designed for the 1500 nm wavelength, has been found to be reached at the threshold current as many as 17 times higher than that of the 1422 nm VCSEL.

Uwarunkowania prawne biopaliw w Polsce

Gutowski K.

Paliwa, Oleje i Smary w Eksploatacji

2002

R. 11, nr 101

13-15