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1

Application of radio frequency inductively coupled plasma in chemical vapor deposition process of diamond-like carbon films for modification of properties of deposited films

Kijaszek W., Oleszkiewicz W., Znamirowski Z.

Materials Science Poland

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2018

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Vol. 36, No. 1

80--85

EN

The authors have deposited the diamond-like carbon (DLC) films by radio frequency inductively coupled plasma enhanced chemical vapor deposition (RF ICP PECVD) method. The investigated DLC films with different sp3 fraction content were deposited on polished and textured silicon substrates. The sp3 fraction content of the deposited DLC films was ranging from 35 % to 70 % and was estimated from acquired Raman scattering spectra (excitation wavelength: 325 nm and 514.5 nm). The measurements of field emission characteristics were carried out in diode configuration. Emission properties of the DLC films were calculated from Fowler-Nordheim plots. The calculated electric field enhancement factor β was ranging from 56 to 198 for the DLC films deposited on polished substrates and from 115 to 445 for films deposited on textured substrates. The surface of the DLC films was observed by scanning electron microscope (SEM) after field emission measurements. The acquired SEM images reveled that the activation of field emission from the DLC films is connected with generation of structural damage to the DLC films.

2

Optimization of radio frequency inductively coupled plasma enhanced chemical vapour deposition process of diamond-like carbon films

Kijaszek W., Oleszkiewicz W.

Optica Applicata

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2016

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Vol. 46, nr 2

167--172

EN

The diamond-like carbon materials have unique mechanical, optical, electrical and chemical properties. The material is commonly applied in automotive industry, medicine and in other everyday life products. However, the diamond-like carbons are not used in micro- and optoelectronics on a wider scale due to technological problems. The application of the diamond-like carbon films in electronic structure is limited because the standard methods do not ensure that the quality and properties of the deposited film will be satisfactory for a specific application. On the other hand, more sophisticated methods that allow manufacturing the diamond-like carbon film with adequate properties, such as microwave assisted chemical vapour deposition, require heating of the substrate to high temperature (above 1000°C). The solution to the problem is the radio frequency inductively coupled plasma enhanced chemical vapour deposition method that allows deposition of the diamond-like carbon films with satisfactory properties and the process can be carried out at room temperature. In the paper, basic information and issues concerning the diamond-like carbon films manufacturing technology by radio frequency inductively coupled plasma enhanced chemical vapour deposition method will be explained. The diamond-like carbon films were investigated by the Raman scattering spectroscopy and the spectroscopic ellipsometry.

3

Investigation of optical properties of silicon oxynitride films deposited by RF PECVD method

Kijaszek W., Oleszkiewicz W., Zakrzewski A., Patela S., Tłaczała M.

Materials Science Poland

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2016

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Vol. 34, No. 4

868--871

EN

In this study, the authors deposited silicon oxynitride films by Radio Frequency Plasma Enhanced Chemical Vapour Deposition (RF PECVD) method. The research explores the relationship between the deposition process parameters and the optical properties of the deposited SiOxNy films. The optical constants of SiOxNy films were measured and calculated by spectroscopic ellipsometry method. Additionally, the authors investigated the possibility of controlling the deposited film composition by the flow ratio of different gaseous precursors: ammonia (NH3), diluted silane (2%SiH4 /98%N2), nitrous oxide (N2 O) and nitrogen (N2). The gas mixture introduced to the working chamber during the growth of the film has the influence on the Si–O and Si–N bonds formation and the ratio between these bonds determines the refractive index of the deposited film.

4

Influence of RF ICP PECVD process parameters of diamond-like carbon films on DC bias and optical emission spectra

Oleszkiewicz W, Markowski J, Srnanek R, Kijaszek W, Gryglewicz J, Kovac J, Tlaczala M

Optica Applicata

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2013

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Vol. 43, nr 1

109--115

EN

The work presents the results of a research carried out with PlasmaLab Plus 100 system, manufactured by Oxford Instruments Company. The system was configured for deposition of diamond-like carbon films by ICP PECVD method. The change of an initial value of DC bias was investigated as a function of set values of the generator power (RF generator and ICP generator) in the constant power of the RF generator operation mode. The research shows that the value of DC bias nearly linearly depends on the RF generator power value and is affected only in a small degree by the power of ICP discharge. The capability of an installed OES spectrometer has been used to ensure the same starting conditions for the deposition processes of DLC films. The analysis of OES spectra of RF plasma discharge used in the deposition processes shows that the increase in ICP discharge power value results in the increased efficiency of the ionization process of a gaseous precursor (CH4). The quality of deposited DLC layers was examined by Raman spectroscopy. Basing on the acquired Raman spectra, the theoretical content of sp3 bonds in the structure of the film was estimated. The content is ranging from 30% to 65% and depends on ICP PECVD deposition process parameters.

5

Reactive ion etching of GaN and AlGaN/GaN assisted by Cl2/BCl3

Gryglewicz J., Oleszkiewicz W., Ramiączek-Krasowska M., Szyszka A., Prażmowska J., Paszkiewicz B., Paszkiewicz R., Tłaczała M.

Materials Science Poland

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2011

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Vol. 29, No. 4

260--265

EN

This work reports on the latest results of etching of different AlxGa1??xN/GaN heterostructures in relation to percentage composition of aluminum. The etching processes were carried out in a reactive ion etching (RIE) system using the mixture of BCl3/Cl2/Ar. The topography of the heterostructures surfaces and the slope were controlled using atomic force microsopy (AFM) technique. The photoluminescence spectra were used to determine the surface damage and to calculate the Al content in AlGaN/GaN heterostructures commonly used for high electron mobility transistors (HEMTs) fabrication.

6

Reaktywne trawienie jonowe heterostruktur AlGaN/GaN w plazmie Cl₂/BCl₃

Gryglewicz J., Oleszkiewicz W., Wośko M., Szyszka A., Paszkiewicz B.

Elektronika : konstrukcje, technologie, zastosowania

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2011

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Vol. 52, nr 11

19-21

PL

W procesie reaktywnego trawienia jonowego (RIE) wielkiej częstotliwości (w.cz) heterostruktur AlGaN/GaN, badano wpływ oddziaływania potencjału auto-polaryzacji dc podłoży (dc bias) oraz mocy wyładowania w.cz. na morfologię trawionej powierzchni oraz szybkość trawienia azotku galowo-glinowego. Procesy trawienia heterostruktur AlGaN/GaN, wytworzonych przy ciśnieniu atmosferycznym, techniką LP-MOVPE, wykonywano w urządzeniu Oxford Instruments Plasmalab 80Plus RIE. Szybkości trawienia oraz wpływ oddziaływania bombardowania jonowego na trawioną powierzchnię podloża badano przy użyciu mikroskopu sił atomowych (AFM) firmy Veeco Instruments pracującym w modzie tappingu. Podłoża testowe trawiono w plazmie chlorowej w stałej proporcji mieszaniny gazów CI₂/BCI₃/Ar.

EN

This work is concentrated on description of influence of process conditions on RIE of AlGaN/GaN heterostructures results, especially the influence of self-dc bias and rf power on morphology and etch rate of AlGaN. In study Oxford Instruments Plasmalab80 RIE tool was used to perform RIE processes on heterostructures grown using MOVPE technique at atmospheric pressure. The etch rates and the influence of ion bombardment on the heterostructures surface was studied by atomic force microscope (AFM) in tapping mode. The test heterostructures were etched in chlorine-based plasma at constant gas mixture of CI₂ /BCI₃/Ar.

7

Computer simulation studies of roughness of thin films formed in the ion beam assisted deposition (IBAD) process

Oleszkiewicz W., Romiszowski P.

Optica Applicata

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2005

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Vol. 35, nr 3

495-501

EN

In this study we present Monte Carlo simulation studies of thin films deposited in the ion beam assisted deposition (IB AD) process. The simulations were performed on a simple cubic lattice with the Metropolis sampling algorithm. Examination of the microstructure and morphology of the simulated film shows that the processes of the surface diffusion of adatoms and the sputtering of the film during its growth as a result of the ion bombardment significantly influence the structure of the deposited layer. The presented simulation model enables one to determine the importance and the influence of these processes on the final structure of the film.

8

Wzrost warstw w obecności wiązki jonów (IBAD) : symulacje komputerowe metodą Monte Carlo

Oleszkiewicz W., Romiszowski P.

Elektronika : konstrukcje, technologie, zastosowania

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2005

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Vol. 46, nr 6

11-13

PL

Przedstawiono kontynuację badań symulacyjnych metodą Monte Carlo wzrostu warstw (w skali atomowej) wspomaganego niskoenergetycznym bombardowaniem jonowym (IBAD). W określonych warunkach procesu osadzania badano, w jakim stopniu oddziaływania adatom-adatom, jon-adatom, uwzględnione w modelu, wpływają na strukturę warstw i morfologię ich powierzchni. Stwierdzono, że oddziaływania te mogą znacząco zmieniać strukturę kolumnową warstw zwłaszcza w zakresie małych energii jonów bombardujących warstwę. Zmienia się wówczas również gęstość i chropowatość warstw.

EN

Monte Carlo simulations of the IBAD process of layer growths in the atomic scale are presented. The investigations focused on the influence of both the adatom-adatom and ion-adatom interactions on the structure and the morphology of the layers. It was found that these interactions can determine the presence (or absence) of the columnar structure of the layers particularly for the low ion bombardment energy regime. Also the density and the roughness of the layers is sensible to the magnitude of these interactions.

9

Badania chropowatości powierzchni warstw optycznych nanoszonych w procesie IBAD : wstępne porównanie symulacji komputerowych z eksperymentem

Marendziak A., Oleszkiewicz E., Oleszkiewicz W., Romiszowski P., Żukowska K.

Elektronika : konstrukcje, technologie, zastosowania

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2003

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Vol. 44, nr 11

21-23

PL

W pracy przedstawiono kontynuację badań symulacyjnych (metodą Monte Carlo) modyfikacji topografii powierzchni i wzrostu warstw nanoszonych w procesie IBAD. Badano chropowatość powierzchni warstw o symulowanym wzroście oraz warstw optycznych (CrN) nanoszonych w warunkach odpowiadających warunkom symulacji. Z pomiarów elipsometrycznych, mierząc spektralną zależność współczynnika załamania n oraz wskaźnika absorpcji k, określono wpływ energii bombardujących jonów na właściwości optyczne osadzanych warstw. Zmiana parametrów n i k wynika m. in. ze zmian topografii powierzchni, co badano wykorzystując mikroskop sil atomowych (AFM). Porównując wartości współczynników ft, zmierzonych za pomocą mikroskopu AFM z wartościami uzyskanymi z symulacji komputerowych stwierdzono konieczność opracowania odpowiedniej metodyki uśredniania obliczeń.

EN

In this work we present the continuation of our former simulation studies on optical films deposited in IBAD process. The comparison between the simulation results and the experimental results obtained for CrN film obtained for different energy of ion beam is presented. The results show that along with the increase of the ion beam energy the roughness of the films under consideration decreases for both simulation and experimental cases determined by AFM microscope measurements.

10

Growth of the optical layers in a stochastic simulation. Study of a film morphology

Oleszkiewicz W., Romiszowski P.

Optica Applicata

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2002

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Vol. 32, nr 3

259-265

EN

A Monte Carlo simulation model of the ion-beam assisted deposition (IBAD) process was used to investigate the influence of some process parameters on the final quality of thin films. The simulations were performed on a simple cubic lattice on which the particles were located. The results show that the angle of ion beam incidence, as well as the kinetic energy of particles, ion-to-atom arrival ratio (IAR) and the roughness of the substrate play an important role in the quality of the obtained films. The influence of the deposition process parameters on the morphology of the films was also discussed

11

Badanie wpływu modyfikacji procesu nanoszenia w obecności wiązki jonów (IBAD) na wzrost warstw - symulacje metodą Monte Carlo

Oleszkiewicz W., Romiszowski P.

Elektronika : konstrukcje, technologie, zastosowania

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2001

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Vol. 42, nr 7

25-27

PL

Przeprowadzono symulację wzrostu warstw nanoszonych w procesie IBAD metodą Monte Carlo. Zbadano wpływ parametrów procesu osadzania na właściwości warstw. Symulacje prowadzono na siatce kubicznej prostej (simple cubic), w węzłach której lokują się nanoszone cząstki. Jednocześnie wprowadzono możliwość zmiany struktury wewnętrznej w czasie trwania procesu osadzania. Otrzymane wyniki wskazują, że morfologia warstw zależy istotnie od kąta padania wiązki jonów, energii kinetycznej cząstek docierających do podłoża, proporcji natężenia strumienia jonów i atomów w procesie oraz rodzaju profilu powierzchni. Odpowiedni dobór tych parametrów pozwala na optymalizację właściwości warstw.

EN

A Monte Carlo simulation model of the ion-assisted deposition process (IBAD) has been used in order to investigate the influence of some process parameters on the final quality of the thin films. The simulations were performed on a simple cubic lattice on which the particles were located. The mechanism of internal rearrangements of deposited adatoms has been introduced into the model. The results show that the angle of ion beam as well as the kinetic energy particles, ion-to-atom arrival ratio (IAR) and the roughness of the substrate play an important role in the quality of obtained films. Also the influence of the parameters on morphology of the films has been discussed.