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1 1998

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Wet and dry etching of GaSb/GaInAsSb photodiode heterostructures

Piotrowski T. T., Papis E., Guziewicz M., Gołaszewska K., Kamińska E., Piotrowska A., Andreev I. A., Mikhailova M. P., Kunitsyna E. V., Yakovlev Y. P.

Electron Technology

1998

Vol. 31, No. 3/4

304-310

Antimonide-based heterostrucures lattice matched to GaSb substrates are particulary attractive for high-efficiency fast photodiodes (PDs) working in the mid-infraret region of the spectrum. Much of the recent progress in the technology of these devices has occurred on the materials side. In order to exploit this potential considerable advances in processing technology, including controlled mesa etching and photodiode surface passivation techniques are required. This paper deals the processes of wet and dry etching of GaSb-based compounds in order to form and passivate GaSb/Ga₀.₇₈In₀.₂₂As₀.₁₈Sb₀.₈/Ga₀.₆₆Al₀.₃₄As0.₂₅Sb₀.₉₇₅ PD mesa sructures. HCL + H₂O₂ + H₂O solutions and CCL₄/H₂ plasmas have been used for masa etching and thier results on mesa profile and etch depth control have been compared. For mesa passivation a surface treatment in (NH₄)₂S water solution was carried out. Examination of PD performance through the measurments of current-voltage and spectral responsivity characteristic have shown that unpassivated photodode structures are characterized by darc current Id=5 ÷ 10 µA at reverse bias UR = -1 V, and quantum efficiency ƞ = 0.5 ÷ 0.7 at ʎ = 2.3 µm and T = 300 K. reduction of dark curent to Id ≤ 3 µA has been obtained for GaSb/GaAlAsSb mesa structures processed in (NH₄)₂S.