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High power AlGaAs/GaAs lasers with improved optical degradation level

Bugajski M., Zbroszczyk M., Sajewicz P., Muszalski J.

Optica Applicata

2002

Vol. 32, nr 3

469-475

Accurate numerical simulation of AlGaAs/GaAs SQW SCH lasers and MQW SCH lasers is presented. We discuss the performance of both types of lasers with regard to high power operation at 808 nm spectral band which is of interest for diode pumped Nd:YAG lasers. Design rules for above-mentioned lasers are formulated. From the analysis presented it follows that MQW SCH lasers are better suited for high power applications and exhibit a superior tolerance to inherent construction parameters variations, as well as to external operation parameters. We also test different waveguide designs. The most important conclusion is that broader waveguides are suitable for obtaining higher optical powers and generally result in higher COD (catastrophic optical degradation) level.

Strained layer SCH SQW InGaAs/GaAs lasers for 980-nm band

Bugajski M., Mroziewicz B., Regiński K., Muszalski J., Kubica J., Zborszczyk M., Sajewicz P., Piwoński T., Jachymek A., Rutkowski R., Ochalski T., Wójcik E., Kowalczyk E., Maląg A., Kozłowska A., Dobrzański L., Jagoda A.

Opto-Electronics Review

2001

Vol. 9, No. 1

35-47

Strained layer InGaAsIGaAs SCH SQW (separate confinement heterostructure single quantum well) lasers were grown by a molecularbeam epitaxy (MBE). Highly reliable CW (continuous wave) 98O-nm. broad contact, pump lasers were fabricated in stripe geometry using Schottky isolation and ridge waveguide construction. Threshold current densities of the order of Jth =280 A/cm² (for the resonator length L = 700 um) and differential efficiency ƞ = 0.40 W/A (41%) from one mirror were obtained. The record wall-plug efficiency for AR/HR coated devices was equal to 54%. Theoretical estimations of above parameters. obtained by numerical modelling of devices were Jth = 210 A/cm² and ƞ = 0.47 W/A from one mirror, respectively. Degradation studies revealed that uncoated and AR/HR coated devices did not show any appreciable degradation after 3000 hr of CW operation at at 35°C heat sink temperature at the constant optical power (50 mW) conditions

High-performance 980-nm strained-layer InGaAs/GaAs quantum-well lasers

Bugajski M., Regiński K., Mroziewicz B., Kubica J.M., Sajewicz P., Piwoński T., Zbroszczyk M.

Optica Applicata

2001

Vol. 31, nr 2

267-271

Reports fabrication of strained-layer InGaAs/GaAs separate-confinement-heterostructure single-quantum-well (SCH SQW) lasers operating in the wavelength range of 980 nm. Design process of the devices involved simulation of their above-threshold operation including all relevant physical phenomena. The lasers were characterized at room temperature in the pulsed operation regime at frequency v=5 kHz and pulse length tau =200 ns. Threshold current densities of the order J/sub th/=280 A/cm/sup 2/ and differential efficiency eta =0.40 W/A were obtained for devices with cavities of 700 mu m in length and broad contacts of 100 mu m in width