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1

Effect of uniform stress on SiO2/Si interface in oxygen-implanted Si and SIMOX structures

Misiuk A., Bryja L., Kątcki J., Ratajczak J.

Optica Applicata

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2002

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Vol. 32, nr 3

397-407

EN

The effect of high temperature–hydrostatic pressure (HT–HP) treatment on SiO2/Si interface in oxygen-implanted (oxygen doses up to 2×1018 cm–2) silicon (Si:O) and reference silicon-on-insulator (SOI) samples has been investigated by the transmission electron microscopy (TEM) and the photoluminescence (PL) methods. The Si:O and SOI samples have been HT–HP treated at 1230–1570 K under argon pressure up to 1.23 GPa for 5 h. Depending on the dose of implanted oxygen and other implantation and HT–HP treatment conditions, the dispersed SiO2–x precipitates or buried SiO2 layer are created in the Si bulk. The HT–HP treatment affects the creation of dislocations and other defects at the SiO2/Si interface; this effect is related in part to a decreased misfit at the SiO2/Si boundary at HT–HP.

2

Obróbka wiązką jonów, trawienie chemiczne i pomiar fotoluminescencji w ujawnianiu defektów w Si:O wygrzanym w warunkach wysokich ciśnień hydrostatycznych

Łasisz S., Łukaszewicz M., Misiuk A., Bryja L.

Elektronika : konstrukcje, technologie, zastosowania

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2001

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Vol. 42, nr 7

14-15

PL

Defekty ujawniano na powierzchni mechanicznego szlifu skośnego w próbkach monokrystalicznego krzemu implantowanych jonami O+, a następnie poddanych obróbce termicznej w temperaturze 1130°C w warunkach podwyższonego ciśnienia hydrostatycznego argonu (do 15 kbar). Po selektywnym trawieniu w roztworze Yanga próbki Si:O poddano trawieniu wiązką jonów argonu. Porównano zdjęcia mikroskopowe defektów ujawnionych chemicznie widocznych przed i po trawieniu wiązką jonów. Jako dodatkowy wskaźnik występowania defektów w warstwach implantowanych potraktowano widma fotoluminescencyjne.

EN

Structural deffects were developed on the surface of slant microsection for the specimens of monocrystaline silicon implanted with O+ ions and annealed at the temperature 1130°C under hydrostatic argon pressure up to 15 kbar. After selective chemical etching in Yang solution the speciments were etched with argon ion beam. The influence of ion etching on the relief after selection chemical etching were studed in SEM. Photoluminescence characteristic were treated as suplementary information about the quality of crystallographic structure. The results are presented in table form and illustrated with pictures.

3

Optical characterisation of strained-layer In/sub x/Ga/sub 1-x/As/GaAs MQW LED grown by MOVPE.

Sęk G., Ciorga M., Bryja L., Misiewicz J., Radziewicz D., Ściana B., Tłaczała M.

Optica Applicata

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2000

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Vol. 30, nr 1

183-188

EN

We present the use of photoreflectance (PR) spectroscopy combined with the standard photoluminescence (PL) and electroluminescence (EL) for the room temperature optical investigation of strained-layer multiple quantum well (MQW) In/sub x/Ga/sub 1-x/As/GaAs light emitting diode (LED) for 1040 nm. In the PR spectra, except the fundamental transition observed also in the emission spectra, two extra features related to the active region of the device have been seen. The presence of these two excited state transitions allowed the band structure to be analysed and the correctness of the device performance to be checked. We repeated the measurements after the top p-doped GaAs cladding layer had been etched off and discussed the changes of the built-in electric field.

4

Optical studies of MOVPE grown GaN layers

Ciorga M., Jezierski K., Bryja L., Misiewicz J., Paszkiewicz R., Korbutowicz R., Panek M., Paszkiewicz B., Tłaczała M., Trabjerg I.

Opto-Electronics Review

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1999

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Vol. 7, No. 2

93-95

EN

Photoluminescence and reflectance studies of MOVPE grown GaN samples were performed. From reflectance measurements optical constants were calculated by means of Kramers-Kronig analysis in the energy region 0-6 eV.

5

Spectroscopic properties of CdS nanoparticles embedded in sol-gel silica glasses

Stręk W., Makuszewski K., Jasiorski M., Łukowiak E., Bryja L., Ciorga M., Sitarek P., Misiewicz J.

Optica Applicata

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1999

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Vol. 29, nr 3

401-405

EN

Absorption, emission and excitation spectra of CdS nanoparticles embedded in sol-gel silica glasses are reported. Their manufacturing and morphology are described. The effects of temperature on emission behaviour were investigated.