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Wykorzystanie programu „MODEKSP" w szkolnym laboratorium fizycznym

Głowacki M., Olesik Z.

Aparatura Badawcza i Dydaktyczna

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2003

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T. 8, nr 4

288--293

PL

W artykule przedstawiono wykorzystanie programu komputerowego „MODEKSP", zaprojektowanego i wykonanego w Zakładzie Dydaktyki Fizyki i Astronomii WSP w Częstochowie. Program służy do opracowania wyników eksperymentu uczniowskiego, prowadzącego do ustalenia zależności między wielkościami fizycznymi. Możliwości programu pokazano na przykładzie modelowania zależności natężenia prądu stałego od napięcia przyłożonego do obwodu zawierającego stały opór oraz zależności natężenia prądu od oporu przy stałym napięciu, Omówiono również zasady modelowania zjawisk fizycznych na drodze eksperymentu uczniowskiego z wykorzystaniem metody średnich podokresów do dopasowania wykresów do punktów pomiarowych.

EN

In this paper the applications of the computer program "MODEKSP" for elaboration of the results student's modeling experiments in physics is presented. The program in the Physics and Astronomy Department of Pedagogical University of Częstochowa has been designed. Possibilities of this program are presented on the examples modeling process of the direct current vs voltage dependence in electric circuit containing a constant resistance as well as current vs resistance dependence if voltage is constant. The principles of the modeling process in the experimental way with using the average subperiods is discussed too.

2

Photoemitters Based on the Field Induced Electric Emission

Olesik Z., Małachowski M.

Molecular and Quantum Acoustics

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2002

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Vol. 23

313-321

3

Optoelectronic properties controlled by an electric field in thin films

Olesik J., Całusiński B., Olesik Z.

Electron Technology

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1998

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Vol. 31, No. 3/4

425-428

EN

Electron emission properties of semiconducting films (In₂O₃:Sn) and metallic films (Ti) os thickness 10÷ 100 nm were investigated. the films were deposited by ractive ion sputtering on a glass substrate of thickness 0.2mm. The oposite of the substrate (with a field electrode evaporated onto it) was biased by negative voltage. This created transverse electric field which favoured electron emission into the vacuum. The investigation was performed in the vacuum of the order 10⁻⁸ hPa. Electron emission yield dependence on the intensity of an internal field and illumination were measured. It was shown that the emission yield for semiconducting films depends exponentilly on field intensity. The field influence on photoemission was also found. For metallic films the field effect on emission phenomena was found to be significantly smaller. Measurements of electronics energy in field inducted emission for both types of investigated emiters showed that about 80% of electrons have energy up to eV but some electrons (a few percent) of energy about 50 eV are also detected.