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Agrorecreational ecoparks in the quarries territory as a new type of urban production (on the example of Kryvbas)

Rudenko T., Mukha T., Rudenko M.

Budownictwo i Architektura

2016

Vol. 15, nr 4

41--51

The article analyzes the main conditions of formation of agrorecreational ecoparks in the quarries territory, which no longer perform their initial functions. Agrorecreational ecoparks are regarded as a new type of urban development in combination with recreational function for industrial cities. Thus agrorecreational ecoparks are researched as structural elements of both agroproductive and recreational complexes of a country. Depending on types of activity there have been established main functional subzones and their interposition according to the exploitation mode and territory security. The planning structure of an agrorecreational ecopark locates the subzones of scientific use in the middle of a park, in the most accessible places as they are main attraction for visitors. Natural landscape of recreational use subzone adjoins the scientific zone; service centers and utility zones are located along the edges of the park thus creating a buffer area. The main groups of relief forms have been analyzed, which directly affect the planning structure of the researched parks. The main types of agrorecreational ecoparks in terms of relief forms have been identified; dimensional and spatial peculiarities of organization of such territories have been determined. In the context of a complex terrain and intensive soil erosion the major component of agrorecreational ecoterritories is geoplastic relief with drainage network (columbine), which determines precipitations run-off and the water regime of the park in general. The main notions and special features of landscape columbine and geoplastics (terracing) have been analyzed. The major types of agrolandscapes under the conditions of agrorecreational ecoparks formation have been established.

Evaluation of generation and recombinatoin parameters of SOI MOS structures from gated-diode measurements

Rudenko T.

Electron Technology

1999

Vol. 32, No. 1/2

110-115

The specific properties of generation and recombination currents SOI MOS structures have been studied by gated-diode technique. It is shown that in depth profiling of minority-carrier generation lifetime from the reverse current-gate voltage measurements in highly or moderately doped SOI films, an erroneous lifetime profile with an apparent decrease in lifetime can be obtained because of lagging the actual generation laver width behind the depletion layer width. Another problem lies in the back surface conditions as a result of the variation in the free carrier distribution in Si film (or in the thickness of the depleted and inverted (accumulated) parts of the Si film). This dramatically distorts the reverse current characteristics and makes in fact impossible the correct determination generation parameters of thin or low doped SOI films without numerical simulations. The forward current characteristics of SOI gated-diodes have been discussed. Based on the analysis of the potential and free carrier concentration distribution in a SOI film, two simple methods are outlined to evaluate the minority-carrier recombination life time from the forward current characteristics measured in thin-film SOI gated-diodes in single- and double-gate regimes.