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Czochralski Growth and Properties of Scintillating Crystals

Yoshikawa A., Chani V., Nikl M.

Zeszyty Historyczne Politechniki Warszawskiej

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2014

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z. 16

135--149

EN

The Czochralski method is one of the very few melt growth techniques that are industry friendly when considering the combination of quality, dimensions, and cost of the produced crystals suitable for their commercialization in scintillation detectors. This method is one of the oldest and most developed crystal growth processes regarding an adequate understanding the physical phenomena observed during solidification process and its practical expansion especially in the industrial scale production. It allows controllable formation of single-crystalline cylindrical ingots of various inorganic scintillation materials. The review summarizes recent progress on the Czochralski growth of a number of scintillation materials. The oxide crystals are mainly considered including the Ce and Pr-doped RE3Al5O12, RE = Y, Lu, aluminum garnets and newly discovered ultraeffcient Ce-doped Gd3(Ga,Al)5O12 multicomponent garnet, high density PbWO4 and CdWO4 tungstates, Ce-doped RE2SiO5, RE = Y, Gd, Lu, oxyorthosilicates and (Y,Lu)AlO3 aluminum perovskites and finally the classical Bi4Ge3O12 scintillator. Additionally, the details of the growth of other practically important non-oxide crystals, namely the Ce and Eu-doped LiCaAlF6 neutron and ultraeffcient Ce-doped LaBr3 scintillators, are discussed. The potential of novel micro-pulling down growth method is briefly described in the combinatorial search for new scintillator materials. Selected luminescence and scintillation characteristics including the spectra and decay kinetics, light yield and radiation resistance are also illustrated and overviewed.

2

Growth and scintillation propertiesof Ce-doped PrF₃ single crystals

Kamada K., Yoshikawa A., Satonaga T., Sato H., Beitlerova A., Nikl M., Solovieva N., Fukuda T.

Opto-Electronics Review

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2004

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Vol. 12, No. 4

365-368

EN

The scintillation characteristics of the Ce-doped PrF₃ single crystals have been studied to find out their potential as for heavy scintillators. Crystal growth was performed in a vacuum-tight micro-pulling down (µ-PD) system. PrF₃ crystal was prepared with various concentrations (0, 0.1, 0.5, 1, 3, 5, 10, 20, 60, 80, 100%) of Ce³⁺. The crystals were transparent (CeF₃) or of greenish colour, 3 mm in diameter and 15-50 mm in length. Neither visible inclusions nor cracks were observed. At room temperature, the radio- and photoluminescence spectra and the decay kinetics were measured for the sample set.

3

Crystal growth of new functional materials for electro-optical applications

Fukuda T., Shimamura K., Yoshikawa A., Villora E. G.

Opto-Electronics Review

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2001

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Vol. 9, No. 2

109-116

EN

High quality fluoride and oxide single crystals for optical, piezoelectric, and other applications have been grown by advanced crystal growth techniques. Corquiriite- and Perovskite-type fluoride single crystals - LiCaAlF₆, LiSrAlF₆, KMgF₃ and BaLiFi₃ - have been grown for solid state ultraviolet laser applications, and as window materials for next generation optical lithography. La₃Nb₀.₅Ga₅.₅O₁₄ and La₃Ta₀.₅Ga₅.O₁₄ piezoelectric single crystals of size and quality comparable to La₃Ga₅SiO₁₄ (langasite) have been produced. The piezoelectric and device properties of the crystals were investigated. A search for new langasite-type materials was also performed. Promising new structural materials, Al₂O₃/RE₃Al₅O₁₂ (RE = rare earth) eutectic fibres, have been grown by the micro-pulling-down technique. Undoped and doped b-Ga₂O₃ single crystals have been grown by the floating zone technique as promising transparent conductive oxides.