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2 Electron Technology

2 1999

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Optimization of porous silicon fabrication in application to FIPOS technology

Półrolnik E., Domański K., Beck R. B., Nossarzewska-Orłowska E.

Electron Technology

1999

Vol. 32, No. 1/2

166-169

The structure of "as-grown" porous silicon layer (PSL) was investigated from the point of view of subsequent epitaxial growth over and oxidation of this layer. The idea of optimization is in-depth profiling morphology of pores during anodization process. By presenting SEM cross-section image and AFM surface image of PSL possibilities and after-efects of PSL morphology changes are demonstrated. The significance of these experimental observations for FIPOS (Full Isolation by Porous Oxidise Silicon) substrate fabrication is briefly discussed.

Characterization of oxidized porous silicon layer in FIPOS structure

Domański K., Półrolnik E., Beck R. B., Brzozowski A.

Electron Technology

1999

Vol. 32, No. 1/2

170-174

Silicon anodization and porous silicon oxidation for SOI devices applications requires among others deternination of device layer isolation quality. This work reports an investigation of basic electrical properties (dielectric constant, fixed oxide charge, electrical immunity) of oxidized porous silicon in metal-oxide-semiconductor and semiconductor-insulator-semiconducor capacitors.