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1
Content available remote Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE
Gelczuk Ł., Dąbrowska-Szata M., Ściana B., Pucicki D., Radziewicz D., Kopalko K., Tłaczała M.
Materials Science Poland
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2016
|
Vol. 34, No. 4
726--734
EN
Conventional deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS techniques were used to study electrical properties of deep-level defects in dilute GaNAs epitaxial layers grown by atmospheric-pressure metalorganic vapourphase epitaxy (APMOVPE) on the GaAs substrate. Three samples with nitrogen concentrations of 1.2 %, 1.6 % and 2.7 % were investigated. In DLTS and LDLTS spectra of the samples, four predominant electron traps were observed. On the basis of the obtained electrical parameters and previously published results, one of the traps was associated with N-related complex defects, while the other traps with common GaAs-like native defects and impurities, called EL6, EL3 and EL2.
2
Content available remote Electro-optical properties of diluted GaAsN on GaAs grown by APMOVPE
Kamyczek P., Biegański P., Płaczek-Popko E., Zielony E., Gelczuk Ł., Sciana B., Pucicki D., Radziewicz D., Tlaczala M, Kopalko K., Dabrowska-Szata M.
Materials Science Poland
|
2013
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Vol. 31, No. 4
595--600
EN
In this paper we report on the optical and electrical studies of single GaAs1-xNx epitaxial layers grown on GaAs substrates by means of atmospheric pressure metal organic vapour phase epitaxy (APMOVPE). Three kinds of samples with 1.2 %, 1.6 % and 2.7 % nitrogen content were studied. Optical properties of the layers were investigated with the use of room temperature transmittance and reflectance measurements. Subsequently Schottky Au–GaAs1-xNx contacts were processed and characterized by current-voltage (I-V) and capacitance-voltage (C-V) measurements within 80 – 480 K temperature range. From the I-V and C-V characteristics the ideality factor, series resistance and built-in potential were determined. Obtained diodes can be used for further studies on defects with the use of DLTS method.
3
Content available remote Electrically active defects in SiC Schottky barrier diodes
Gelczuk Ł., Dąbrowska-Szata M., Synowiec Z.
Materials Science Poland
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2011
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Vol. 29, No. 1
70--75
EN
The electrical properties of deep-level defects in real packaged SiC Schottky barrier rectifiers were studied by deep level transient spectroscopy (DLTS). One deep-level trap with an activation energy in the 0.29-0.30 eV range was revealed to be present in all the tested samples. The electrical characteristics of the trap indicate it is probably attributed to dislocations or to metastable defects, which can be responsible for discrepancies observed in I-V characteristics (see Ref. [2]).
4
Content available remote Photoreflectance study of partially relaxed epitaxial InGaAs on GaAs
Motyka M., Gelczuk Ł., Dąbrowska-Szata M., Serafinczuk J., Kudrawiec R., Misiewicz J.
Optica Applicata
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2009
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Vol. 39, nr 3
561-570
EN
Room temperature photoreflectance (PR) spectroscopy and high resolution X-ray diffraction (HRXRD) have been used to investigate InxGa1-xAs layers grown compressively by MOVPE on GaAs substrates, with different composition and thickness. HRXRD reveals that all the samples are partially relaxed and In composition has been determined for each of the samples. The effects of residual strain on the optical response of the samples, namely interband transitions and the valence band splitting, were analyzed by fitting the standard line shape form to the PR data. The energies determined experimentally as a function of indium content were compared to those obtained in the framework of the elastic strain theory for pseudomorphic layers. This comparison allows us to estimate the extent of strain relaxation and to determine the residual strain values in the samples. Furthermore, we revealed that the measured residual strain ?res follows t-1/2 dependence on the epitaxial layers thickness t. This confirms the appropriateness of the nonequilibrium models (energy-balance models) for these structures.
5
Content available remote Modification of energy bandgap in lattice mismatched InGaAs/GaAs heterostructures
Gelczuk Ł., Dąbrowska-Szata
Optica Applicata
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2009
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Vol. 39, nr 4
845-852
EN
This paper addresses some physical aspects and presents experimental results concerning to phenomena which evoke modification of band structure in lattice mismatched InGaAs/GaAs heterostructures, namely the introduction of extra deep-lying energy levels in the bandgap. The deep level transient spectroscopy reveals commonly observed deep level defects in GaAs-based structures associated with native point defects as well as misfit dislocations related to strain relaxation processes.
6
Content available remote Anisotropic strain relaxation and surface morphology related to asymmetry in the formation of misfit dislocations in InGaAs/GaAs heterostructures
Gelczuk Ł., Dąbrowska-Szata M., Serafińczuk J., Masalska A., Łusakowska E., Dłużewski P.
Materials Science Poland
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2008
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Vol. 26, No. 1
157--166
EN
Partially relaxed InGaAs/GaAs heterostructures with a small lattice mismatch (less than 1%), grown by metalorganic vapour-phase epitaxy have been studied by the transmission electron microscopy, atomic force microscopy as well as X-ray diffractometry. A regular network of 60st.?misfit dislocations formed at the (001) interface in two orthogonal <110>?crystallographic directions has been revealed. A close correspondence between distribution of the interfacial misfit dislocations and undulating surface morphology in the form of a characteristic cross-hatch pattern has been observed. The structural analysis applied for the samples oriented either in [110] or [110] perpendicular directions, using reciprocal lattice mapping, revealed anisotropic strain relaxation, related to the asymmetry in the formation of alfa ?and beta ?misfit dislocations along these both directions, respectively.
7
Content available remote Distinguishing and identification of point and extended defects in DLTS measurements
Gelczuk Ł., Dąbrowska-Szata M., Jóźwiak G.
Materials Science Poland
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2005
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Vol. 23, No. 3
625--641
EN
The convenient and simple criteria which enable us to distinguish between deep level point and extended defects (e.g. dislocations) in DLTS measurements have been proposed. This approach is based on earlier reports of several authors and our own experiences in the field of DLTS measurement data analysis, for III-V semiconductors. It consists of standard DLTS measurements widened by line shape and line behaviour analysis as well as capture kinetics measurements. In the first part, the paper includes a survey of the literature on analysis of the DLTS-signal coming from dislocations. In the second part, selected experimental data on distinguishing and identification of deep point and extended defects, detected in GaAs/GaAs and InGaAs/GaAs heterostructures, have been presented.
8
Badanie głębokich poziomów domieszkowych w strukturach AIIIBV metodą niestacjonarnej spektroskopii głębokich poziomów (DLTS)
Gelczuk Ł., Dąbrowska-Szata M.
Elektronika : konstrukcje, technologie, zastosowania
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2003
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Vol. 44, nr 10
3-8
PL
W pracy omówiono właściwości elektronowe i podstawowe parametry głębokich poziomów defektowych. Przedstawiono główne założenia metody lock-in DLTS i jej zastosowania do wyznaczania charakterystycznych parametrów głębokich poziomów. Omówiono podstawowe podzespoły stanowiska pomiarowego. Przedstawiono wyniki pomiarów sygnału DLTS w funkcji temperatury w strukturach n-GaAs z warstwą epitaksjalną. Wyznaczono energie aktywacji i przekroje czynne na wychwyt nośników. Zidentyfikowano wykryte poziomy pułapkowe.
EN
In this paper, the electron-properties and fundamental parameters of deep level defects have been discussed. The main assumptions of loc-k-in DLTS technipue and its application to determination of characteristic parameters of deep levels have been described. The basics components of the DLTS set up have been discussed. The results of temperature scan mode for DLTS signal measurements in n type GaAs structures with an epitaxial layer have been presented. The activation energies and the capture cross sections have been also determined. Ali the detected deep level traps have been identified.
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