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Uncooled microbolometer detector: recent developments at ULIS

Tissot J. L., Trouilleau C., Fieque B., Crastes A., Legras O.

Opto-Electronics Review

2006

Vol. 14, No. 1

25-32

Uncooled infrared focal plane arrays are being developed for a wide range of thermal imaging applications. Fire-fighting, predictive maintenance, process control and thermography are a few of the industrial applications which could take benefit from uncooled infrared detector. Therefore, to answer these markets, a 35-µm pixel-pitch uncooled IR detector technology has been developed enabling high performance 160x120 and 384x288 arrays production. Besides a wide-band version from uncooled 320x240/45 µm array has been also developed in order to address process control and more precisely industrial furnaces control. The ULIS amorphous silicon technology is well adapted to manufacture low cost detector in mass production. After some brief microbolometer technological background, we present the characterization of 35 µm pixel-pitch detector as well as the wide-band 320x240 infrared focal plane arrays with a pixel pitch of 45 µm.

Low-cost 320 x 240 uncooled IRFPA using conventional silicon IC process

Ishikawa T., Ueno M., Endo K., Nakaki Y., Hata H., Sone T., Kimata M.

Opto-Electronics Review

1999

Vol. 7, No. 4

297-303

A 320 x 240 uncooled infrared focal plane array (IRFPA) with series PN junction diodes fabricated on a silicon-on-insulator (SOI) wafer has been developed. Resistive bolometers, pyroelectric detectors and thermopile detectors have been reported for large scale uncooled IRFPAs, while the detector developed uses the temperature dependence of forward-biased voltage of the diode. The diode has low 1/f noise because it is fabricated on the monocrystalline SOI film which has few defects. The diode is supported by buried silicon dioxide (BOX) film of the SOI wafer, which becomes a part of a thermal isolated structure by using bulk silicon micromachining technique. The detector constains an absorbing membrane with a high fill factor of 90% to achieve high IR absorption, and the readout circuit of the FPA constains a gate modulation integrator to suppress the noise. Low cost IRFPA can be supplied because the whole structure of the FPA is fabricated on commercial SOI wafers using a conventional silicon IC process.