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1
Content available remote The influence of annealing on the properties of ZnO:Al layers obtained by RF magnetron sputtering
Zdyb A., Krawczak E., Gułkowski S.
Opto-Electronics Review
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2018
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Vol. 26, No. 3
247--251
EN
Al doped ZnO has been explored as a viable alternative to indium thin oxide, which is usually used as transparent electrodes’ coverage but is expensive. Homogenous and durable ZnO:Al layers on glass have been obtained in radio frequency magnetron sputtering system by adjusting optimized deposition parameters, using ZnO ceramic target with 2 wt% Al₂O₃. Then, after growth process, annealing treatment has been introduced in order to improve the quality of the layers. Structural, electrical and optical properties of the obtained ZnO:Al layers are presented and discussed. From the application point of view, the best results (sheet resistance of 24 Ω/sq and transparency well above 85%) were achieved after annealing in 300°C.
2
Content available Characterization of ZnO:Al layers for applications in thin film solar cells
Zdyb A., Krawczak E., Lichograj P.
Optica Applicata
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2016
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Vol. 46, nr 2
181--185
EN
Thin films of zinc oxide doped with aluminium were obtained by using the magnetron sputtering technique on glass substrates. The changes in magnetron power influence the structural, optical and electrical properties of the ZnO:Al layers. The deposited films are characterized by very good homogeneity and high optical transmission. Thicker films with larger agglomerates on the surface exhibit lower resistivity with the remaining good transparency.
3
Content available remote Cienkowarstwowe ogniwa słoneczne w aplikacjach elastycznych
Sibiński M., Walczak S.
Przegląd Elektrotechniczny
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2013
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R. 89, nr 10
136-138
PL
W ostatnich latach notuje się gwałtowny wzrost wielkości instalacji fotowoltaicznych, którego przyczyną jest zarówno spadek cen ogniw słonecznych, jak również poprawa ich parametrów i rozszerzenie zakresu zastosowań. Niniejszy artykuł poświęcony jest przeglądowi aktualnie dostępnych konstrukcji, jak i badaniom ich możliwości aplikacyjnych do energooszczędnego, wielkoseryjnego procesu produkcyjnego, umożliwiającego otrzymanie w pełni elastycznych struktur fotowoltaicznych nadających się do niekonwencjonalnych zastosowań.
EN
In recent years, the rapid growth in photovoltaic systems has been observed, which is both a cause of falling prices of solar cells, as well as improving their performance and extending the range of applications. This paper presents currently available structures and their potential application in energy-efficient, mas production processes, which allows to obtain a fully flexible structures suitable for unconventional photovoltaic applications.
4
Content available remote Electrical and optical properties of NiO films deposited by magnetron sputtering
Guziewicz M., Grochowski J., Borysiewicz M., Kaminska E., Domagala J. Z., Rzodkiewicz W., Witkowski B. S., Golaszewska K., Kruszka R., Ekielski M., Piotrowska A.
Optica Applicata
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2011
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Vol. 41, nr 2
431--440
EN
Films of transparent semiconductors are widely studied and developed because of high potential applications in electronics in last decade. Our work concerns the properties of NiO films fabricated by RF magnetron sputtering. Electrical and optical parameters of the films were characterized using Hall and transmittance measurements, respectively. P-type conductivity of as-deposited films and after annealing in oxygen or argon at the temperature range from 300 °C to 900 °C was verified. Transmittance of NiO films strongly depends on deposition temperature and oxygen amount during sputtering. Films deposited at room temperature without oxygen have transmittance near 50% in the visible range and resistivity about 65 ?cm. An increase in oxygen amount in deposition gas mixture results in higher conductivity, but transmittance decreases below 6%. Resistivity of 0.125 ?cm was attained at sputtering in oxygen. Films deposited at temperature elevated up to 500 °C are characterized by transmittance above 60% and lower conductivity. Annealing of NiO films in Ar causes resistivity to rise dramatically.
5
Content available remote Ti-doped In2O3 transparent conductive thin films with high transmittance and low resistivity
Song Z., Fu Q., Li L., Li L., An Y., Wang Y.
Optica Applicata
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2010
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Vol. 40, nr 4
751--757
EN
Ti-doped In2O3 thin films have been prepared on glass substrate by radio frequency (RF) sputtering with different sputtering powers (90, 120, 150, and 180 W) at 330 °C. The influence of sputtering power on the structural, electrical and optical properties of the deposited thin films is investigated. The average transmittance of the thin films in the wavelength range of 500-1100 nm is over 90%. Low resistivity of 7.3×10-4 ?cm is also obtained based on our thin films, suggesting that Ti-doped In2O3 is a good candidate for transparent conductive thin film.
6
Content available remote Ta-doped In2O3 transparent conductive films with high transmittance and low resistance
Wang B., Hu L. M., Liu F. M., Qin L., Liu Y., Wang L. J.
Optica Applicata
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2010
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Vol. 40, nr 1
25--31
EN
Ta-doped In2O3 transparent conductive oxide (TCO) thin films are deposited on glass substrates by radio-frequency (RF) sputtering at room-temperature. The influence of sputtering power on the structural, morphologic, electrical, and optical properties of the films is investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Hall measurement, and optical transmission spectroscopy. The obtained films are polycrystalline with a cubic structure and preferentially oriented in the (222) crystallographic direction. The minimum resistivity of 2.8×10-4 ?cm is obtained from the film deposited at the sputtering power of 170 W. The average optical transmittance of the films is over 90%.
7
Content available remote The effect of film thickness on physical properties of fluorine-doped indium oxide thin films
Rozati S. M., Ganj T.
Materials Science Poland
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2004
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Vol. 22, No. 2
93--97
EN
In this paper, fluorine-doped indium oxide films of thicknesses ranging from 115 nm to 1290 nm were prepared using the spray pyrolysis technique by varying the amount of spray solution and keeping constant the substrate temperature, doping concentration and air flow rate. The preferential growth orientation was determined using the X-ray diffraction (XRD) spectra of doped indium oxide films of various thicknesses. The sheet resistance decreases gradually with the film thickness and reaches a stable value. It has also been observed that an increase in thickness deteriorates the optical properties of the deposited films beyond some limit.
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