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1 2008

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Influence of the deposition parameters of nucleation layer on the properties of thick gallium nitride layers

Prażmowska J., Korbutowicz R., Paszkiewicz R., Szyszka A., Podhorodecki A., Misiewicz J., Tłaczała M.

Materials Science Poland

2008

Vol. 26, No. 1

79--85

Gallium nitride layers were grown on sapphire (0001) substrates on low temperature (LT)-GaN layer deposited by the HVPE method. HCl flow rates and deposition times of the nucleation layer were varied in the range of 8-10 cm3/min and 5-9 min (with the step of 2 min), respectively. Morphologies of LTGaN buffer layers and subsequent high temperature (HT)-GaN layers were examined by scanning electron microscopy. Photoluminescence spectra of HT-GaN layers were recorded which allowed us to evaluate the optical quality of thick HVPE HT-GaN layers.