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1
Wpływ wygrzewania na właściwości powierzchni cienkich warstw na bazie wybranych tlenków metali
Obara K., Kaczmarek D., Pierściński R., Poniedziałek A., Domanowski P.
Elektronika : konstrukcje, technologie, zastosowania
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2017
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Vol. 58, nr 7
8--13
PL
W pracy zbadano wpływ wygrzewania w wysokiej temperaturze na właściwości powierzchni cienkich warstw na bazie tlenków tytanu i wolframu. Cienkie warstwy dwutlenku tytanu (TiO2) i trójtlenku wolframu (WO3) naniesiono na podłoża z krzemionki amorficznej (SiO2) metodą parowania wiązką elektronową. Następnie próbki poddano wygrzewaniu w powietrzu atmosferycznym, do temperatury 800°C. Właściwości strukturalne powłok cienkowarstwowych TiO2 i WO3 określono przy użyciu metody dyfrakcji rentgenowskiej. Natomiast właściwości powierzchni cienkich warstw TiO2 i WO3 po naniesieniu oraz po wygrzewaniu, zbadano z wykorzystaniem mikroskopu optycznego, profilometru optycznego oraz stanowiska do pomiaru zwilżalności powierzchni. Pod wpływem wygrzewania poprocesowego nastąpiło przejście TiO2 i WO3 z fazy amorficznej w strukturę polikrystaliczną. W wypadku TiO2 otrzymano fazę anatazu, natomiast w wypadku WO3 strukturę jednoskośną. Cienkie warstwy TiO2 były jednorodne i ciągłe zarówno po naniesieniu, jak i po wygrzewaniu. Z kolei cienkie warstwy WO3 były jednorodne i ciągłe wyłącznie po naniesieniu, ponieważ po wygrzewaniu wystąpiła rekrystalizacja struktury powłoki. Zaobserwowano także znaczne zmiany topografii powierzchni oraz profili wysokości i chropowatości wygrzewanych powłok TiO2 i WO3. Zarówno po naniesieniu, jak i po wygrzewaniu, powierzchnie cienkich warstw TiO2 i WO3 były hydrofilowe.
EN
The annealing influence on surface properties of titanium dioxide (TiO2) and tungsten trioxide (WO3) thin films obtained by electron beam evaporation method on fused silica substrates (SiO2) has been studied. TiO2 and WO3 thin films were annealed in atmospheric pressure at a temperature of 800°C. Structural properties of as-deposited and annealed samples were studied with the use of an X-ray diffractometer. Additionally, surface properties of as-deposited and annealed samples were examined by optical microscope, optical profilometer and tensiometer. TiO2 thin films were uniform and homogenous after deposition and annealing, contrary to WO3 thin films, which were uniform and homogenous only after deposition, annealing caused recrystallization of the thin film structure. Furthermore, significant changes to surface topography, altitude and roughness profiles of both annealed TiO2 and WO3 thin films have been observed. Either as-deposited and annealed TiO2 and WO3 thin films surfaces were hydrophilic.
2
Content available The influence of thermal annealing on structure and oxidation of iron nanowires
Krajewski M., Brzózka K., Górka B., Lin W.-S., Lin H. -M., Szumiata T, Gawroński M., Wasik D.
Nukleonika
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2015
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Vol. 60, No. 1
87--91
EN
Raman spectroscopy as well as Mössbauer spectroscopy were applied in order to study the phase composition of iron nanowires and its changes, caused by annealing in a neutral atmosphere at several temperatures ranging from 200°C to 800°C. As-prepared nanowires were manufactured via a simple chemical reduction in an external magnetic fi eld. Both experimental techniques proved formation of the surface layer covered by crystalline iron oxides, with phase composition dependent on the annealing temperature (Ta). At higher Ta, hematite was the dominant phase in the nanowires.
3
Content available Thermal annealing of soft magnetic materials and measurements of its magnetoelastic properties
Szewczyk R., Bieńkowski A., Salach J., Jackiewicz D., Švec Sr P., Hasko J., Švec P., Kamiński M., Winiarski W.
Pomiary Automatyka Robotyka
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2013
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R. 17, nr 2
513-518
EN
Paper presents both methods of the most advanced thermal annealing as well as available methods of testing the magnetoelastic properties of soft magnetic materials for technical applications. Selected features and conditions important for annealing of ring-shaped cores made of the magnetoelastic amorphous ribbons are described and an example of thermomagnetic processing is shown. Unified methodologies for testing of magnetoelastic properties of the frame-shaped and the ringshaped cores, for both compressive and tensile stresses are presented.
PL
W referacie przedstawiono zarówno nową metodę relaksacji termicznej w materiałach magnetycznie miękkich, jak i metody pomiaru charakterystyk magnetosprężystych w tych magnetykach. W referacie przedstawiono także wybrane wyniki pomiaru wpływu procesu relaksacji termicznej w obecności pola magnetycznego na charakterystyki magnesowania stopów amorficznych, jak również wyniki pomiaru charakterystyk magnetosprężystych. Należy podkreślić, że z wykorzystaniem przedstawionej w pracy metodyki możliwy jest pomiar charakterystyk magnetomechanicznych zarówno w zakresie naprężeń ściskających, jak i rozciągających.
4
Content available remote Comparative study on different annealing methods and choice of solvent in organic field effect transistors based on Poly(3-hexylthiophene)
Chua C. L.
Materials Science Poland
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2013
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Vol. 31, No. 3
325--330
EN
A simple approach to study the effect of processing on the charge carrier mobility in an organic field effect transistor (OFET) based on regioregular poly(3-hexylthiophene) (RR P3HT) is investigated in this paper. It is found that different processing conditions can induce different degrees of hysteresis, which is well correlated with the charge mobility where lower hysteresis represents higher stability and hence higher charge mobility. Solvent annealing tends to create large nano-scale pinholes in P3HT which degrade the mobility.
5
Content available remote Anomalous fading and crystalline structure: studies on individual chondrules from the same parent body
Biswas R. H., Singhvi A. K.
Geochronometria
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2013
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Vol. 40, no. 4
250--257
EN
Plagioclase feldspar is the major luminescent mineral in meteorites. Thermoluminescence (TL) characteristics, peak temperature (Tm), full width at half maximum (FWHM), ratio of high (HT) to low temperature (LT) peak, and TL sensitivity (TL/dose/mass) to an extent reflect degree of crys-tallinity of the mineral. The present study explores and establishes a correlation between quantum mechanical anomalous (athermal) fading and structural state by examining TL of individual chon-drules. Chondrules were separated using freeze-thaw technique from a single fragment of Dhajala me-teorite. The results show large variation in Tm (155-230°C), FWHM (80-210°C) and HT/LT (0.07-0.47) and seem to be positively correlated. TL sensitivity (ranging from 14 to 554 counts/s/Gy/mg) decreases with increasing Tm and FWHM. Large variations in TL parameters (Tm, FWHM, HT/LT, and Sensitivty) suggest that individual chondrules had different degree of crystallization. Thermal an-nealing experiments suggest that comparatively ordered form of feldspar can be converted to a disor-dered form by annealing the sample at high temperatures (1000°C) for long time (10 hr) in vacuum (1 mbar pressure) condition and rapidly cooling it. Measured anomalous fading suggest that fading rate increases as the crystal form changes from an ordered state to a disordered state. However, the fading rate becomes nearly negligible for the most disordered feldspars.
6
Content available Post-recoil thermal annealing study of 177Lu, 169Yb, 175Yb, 166Ho and 153Sm in different organometallic compounds
Nassan L., Achkar B., Yassine T.
Nukleonika
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2011
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Vol. 56, No. 2
185-190
EN
Post-recoil thermal annealing study at different temperatures for different intervals of time of the recoiled isotopes 169Yb, 175Yb, 177Lu, 166Ho, and 153Sm resulting from the nuclear reactions 168Yb(n,gamma)169Yb, 174Yb(n,gamma)175Yb and 176Yb(n,gamma)177Yb → 177Lu, 165Ho(n,gamma)166Ho, 152Sm(n,gamma)153Sm, respectively in different organometallic compounds Yb(OCC(CH3)3CHCOC(CH3)3)3, Ho(OCC(CH3)3CHCOC(CH3)3)3, (C5H5)3Ho, and (C5H5)3Sm were carried out. The thermal annealing behaviors of 177Lu, 169Yb, 175Yb, 166Ho, and 153Sm were found to be different in the compounds under investigation. The differences in the patterns of the obtained isothermal curves were discussed. Depending on the post- -recoil thermal annealing manner the reactions taking place during thermal annealing were suggested.
7
Content available remote Evaluation of optical quality and properties of Ga₀.₆₄In₀.₃₆N₀.₀₀₆As₀.₉₉₄ lattice matched to GaAs by using photoluminescence spectroscopy
Gholami M., Esmaeili M., Haratizadeh H., Holtz P. O., Hammar M.
Opto-Electronics Review
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2009
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Vol. 17, No. 3
260-264
EN
We have investigated optical properties of Ga₀.₆₄In₀.₃₆N₀.₀₀₆As₀.₉₉₄GaAs single quantum-well structures using photoluminescence technique. We have found that nitrogen creates potential fluctuations in the InGaNAs structures, so it is the cause of trap centres in these structures and leads to localized excitons recombination dynamics. The near-band edge PL at 2 K exhibited a blueshift with an increase in excitation intensity of a sample but there is not such a shift in the PL peak position energy of same sample at 150 K. It has been found that PL spectra have a large full width at half maximum (FWHM) value at 2 K. These results are discussed in terms of carrier localization. Additionally, our results suggest decreasing PL integrated intensity in this structure, possibly due to non-radiative recombination. It has been shown that thermal annealing reduces the local strain created by nitrogen. By annealing process, a blue shifted emission can be observed.
8
The thin film MoSi2 heaters under loading and thermal tests
Beensh-Marchwicka G., Prociów E., Stelmasiński T.
Elektronika : konstrukcje, technologie, zastosowania
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2006
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Vol. 47, nr 12
29-31
EN
The thin films MoSi2 (0.9...1.8 µm thick) were investigated for thin film heater applications. The films were deposited on D263 Schott foil or Corning 7059 glass substrates at about 600 K using the magnetron sputter technique. For heating resistors the MeSi-Ag terminations (where Me: Ti, Ni) were used. It was observed that as-deposited MoSi2 films yield the resistivity p in the range of 1 ...1.8 mΩ⋅cm and temperature coefficient of resistance TCR between -1200 and -1600 ppm/K. During loading test the devices were loaded with various dc power 0.5, 1, 1.5 W up to 10 hours at ambient air. Periodically the resistance versus temperature characteristics in the temperature range of 300...500 K were measured to evaluate the both the reversible and non reversible changes in resistance and TCR values. However thermal test was performed in ambient air at 473 K during 200 h for preaged heaters. During thermal test the devices were loaded periodically with dc power about 0.1 W and the changes in film resistance with time were monitored and evaluated.
PL
Cienkie warstwy MoSi2 o grubości 0,9...1,8 µm badano jako cienkowarstwowe elementy grzejne. Warstwy osadzano na podłoża foliowe D263 firmy Schott lub szklane Corning 7059 o temperaturze ok. 600 K przy użyciu techniki rozpylania magnetronowego. Wyprowadzenia grzejników stanowiła dwuwarstwa MeSi-Ag, gdzie Me: Ti lub Ni. Zaobserwowano, że warstwy MoSi2 po napyleniu miały rezystywność p w zakresie 1...1.8 mΩ⋅cm oraz TWR ujemny w granicach (1200...1600)-10⁻⁶/K. Podczas testu obciążenia elementy obciążano mocą prądu stałego 0,5,1 i 1,5 W do 10 h w powietrzu. Do oceny zmian odwracalnych i nieodwracalnych rezystancji i TWR w czasie testu periodycznie mierzono charakterystyki rezystancyjno-temperaturowe w zakresie 300..500 K. Test temperaturowy przeprowadzano w atmosferze powietrza o temperaturze około 473 K w czasie 200 h dla wstępnie starzonych grzejników. Elementy obciążano mocą prądu stałego ok. 0,1 W i rejestrowano zmiany rezystancji w czasie.
9
Content available remote Dependence of luminescence characteristics of irradiated quartz with the thermal treatment and consequences for TL dating
Roque C., Guibert P., Duttine M., Vartanian E., Chapoulie R., Bechtel F.
Geochronometria
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2004
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Vol. 23
1-8
EN
The dependence of luminescence properties of archaeological quartz pebbles with their thermal history is investigated and consequences for TL-dating are examined; the archaeological samples studied were collected from Solutrean layers at Laugerie Haute West rock shelter (Dordogne, France). This study is supported by a simulation experiment carried out on a natural quartz, using a combined approach by Cathodoluminescence (CL), Thermoluminescence (TL) and Electron Paramagnetic Resonance (EPR) techniques. The quartz grains used were given a high beta dose, then independent aliquots were annealed in air at a temperature varying from 300 degrees C to 900 degrees C. It has been observed that the TL growth with dose, after annealing and re-irradiation, evolved from a linear behaviour to a marked supralinear one according to annealing temperature linked respectively with a partial or a total thermal drainage of charges in deep traps. Consequently, during the TL-dating process of materials anciently heated at low temperature in the past (between 300 degrees C and 500 degrees C approximately), a special care has to be taken by adopting an annealing treatment that approaches the filling state of trapped charges that the samples had after the archaeological zeroing. This necessary new requirement strengthens accuracy and reliability of TL-dates obtained at Laugerie Haute.
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